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    25 WATT AMPLIFIER TRANSISTOR THROUGH HOLE Search Results

    25 WATT AMPLIFIER TRANSISTOR THROUGH HOLE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    25 WATT AMPLIFIER TRANSISTOR THROUGH HOLE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    motorola AN1308

    Abstract: 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 t1z12 elmwood sensors ltd Aham Tor Inc erg3sj100
    Text: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high


    Original     		PDF AN1308/D AN1308 AN1308/D* AN1308/D motorola AN1308 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 t1z12 elmwood sensors ltd Aham Tor Inc erg3sj100

    ELMWOOD SENSORS

    Abstract: AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD
    Text: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high


    Original     		PDF AN1308/D AN1308 AN1308/D* ELMWOOD SENSORS AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD

    Untitled

    Abstract: No abstract text available
    Text: ECP203 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 2.1 - 2.7GHz 32.5 dBm P1dB High Linearity: 48 dBm OIP3 10 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters Multi-carrier systems


    Original     		PDF ECP203 QFN-16 ECP203 ECP203G ECP203G-500 ECP203G-1000 ECP203D ECP203D-500 ECP203D-1000 QFN-16

    300 watts amplifier schematics

    Abstract: MCH185C102KK power amplifier 500 watt transistor circuit
    Text: ECP103 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters Multi-carrier systems 2.1-2.7GHz 30.5 dBm P1dB High Linearity: 46 dBm OIP3 High Efficiency: PAE > 40% 11 dB Linear Gain Single 5V Supply High Reliabilty


    Original     		PDF ECP103 QFN-16 ECP103 ECP103G ECP103G-500 ECP103G-1000 ECP103D ECP103D-500 ECP103D-1000 QFN-16 300 watts amplifier schematics MCH185C102KK power amplifier 500 watt transistor circuit

    16 pin 4x4 amplifier gsm

    Abstract: mch185C102kk MCH185A100DK ECJ-1VF1A105Z
    Text: PRELIMINARY DATA SHEET ECP052 0.5 WATT POWER AMPLIFIER Features Applications 0.8GHz to 1GHz 28.0dBm P1dB High Linearity: 44dBm OIP3 High Efficiency: PAE > 50% 17dB Linear Gain High Reliability Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE


    Original     		PDF ECP052 44dBm QFN-16 ECP052 ECP052G ECP052G-500 ECP052G-1000 ECP052D ECP052D-500 ECP052D-1000 16 pin 4x4 amplifier gsm mch185C102kk MCH185A100DK ECJ-1VF1A105Z

    LM49830

    Abstract: 150w audio amplifier circuit diagram class AB 2sk1058 2SJ162 LME49830 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM lm4702 OUTPUT STAGE INFORMATION AN-1850 transistor 2sj162 450w power supply schematic diagram AN1645
    Text: National Semiconductor Application Note 1850 Troy Huebner John DeCelles July 1, 2008 Introduction validate the solution’s sonic performance in the desired test environment. The solution presented has undergone listening evaluations in a dedicated sound room for verification of sonic


    Original     		PDF LME49830 EF125WT1 AN-1850 LM49830 150w audio amplifier circuit diagram class AB 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM lm4702 OUTPUT STAGE INFORMATION AN-1850 transistor 2sj162 450w power supply schematic diagram AN1645

    LM49830

    Abstract: Audio Power Amplifier MOSFET TOSHIBA high power fet audio amplifier schematic 300w power amplifier circuit diagram 150w audio amplifier circuit diagram class AB lm4702 OUTPUT STAGE INFORMATION lme49830 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 300w mosfet audio amplifier circuit diagram
    Text: National Semiconductor Application Note 1850 Troy Huebner John DeCelles December 2, 2008 Introduction validate the solution’s sonic performance in the desired test environment. The solution presented has undergone listening evaluations in a dedicated sound room for verification of sonic


    Original     		PDF LME49830 EF125WT1 AN-1850 LM49830 Audio Power Amplifier MOSFET TOSHIBA high power fet audio amplifier schematic 300w power amplifier circuit diagram 150w audio amplifier circuit diagram class AB lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 300w mosfet audio amplifier circuit diagram

    LME49830

    Abstract: an1850 150W TRANSISTOR AUDIO AMPLIFIER LM49830 AN-1850 SNAA058B
    Text: Application Report SNAA058B – July 2008 – Revised May 2013 AN-1850 LME49830TB Ultra-High Fidelity High Power Amplifier Reference Design .


    Original     		PDF SNAA058B AN-1850 LME49830TB LME49830 an1850 150W TRANSISTOR AUDIO AMPLIFIER LM49830 SNAA058B

    16 pin 4x4 amplifier gsm

    Abstract: amplifier QFN16 MCH185A3R3CK
    Text: ECP100 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems 100 - 2300MHz 31 dBm P1dB High Linearity: 47 dBm OIP3 High Efficiency: PAE > 45%


    Original     		PDF ECP100 2300MHz 96GHz PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP100 ECP100G ECP100G-500 ECP100G-1000 ECP100D 16 pin 4x4 amplifier gsm amplifier QFN16 MCH185A3R3CK

    Untitled

    Abstract: No abstract text available
    Text: ECP200 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 100 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 11 dB Linear Gain at 1.96GHz Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE


    Original     		PDF ECP200 2300MHz 96GHz PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP200 ECP200G ECP200G-500 ECP200G-1000 ECP200D

    ECP050D-500

    Abstract: No abstract text available
    Text: ECP050 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 1800 MHz - 2300MHz 28dBm P1dB High Linearity: 45dBm OIP3 High Efficiency: PAE > 45% 15 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters


    Original     		PDF ECP050 2300MHz 28dBm 45dBm PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP050 ECP050G ECP050G-500 ECP050G-1000 ECP050D-500

    16l soic8

    Abstract: qfn16 thermal resistance
    Text: ECP053 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 2.4GHz - 2.7GHz 28dBm P1dB High Linearity: 43dBm OIP3 High Efficiency: PAE > 45% 13 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters


    Original     		PDF ECP053 28dBm 43dBm QFN-16 ECP053 ECP053G ECP053G-500 ECP053G-1000 ECP053D ECP053D-500 16l soic8 qfn16 thermal resistance

    APT9801

    Abstract: ARCO 465 Compression Trimmer Capacitor arco mica trimmer amplifier circuit diagram ARF449A 2020N102J501P arf449 Noble trimmer ARF449B 250 watt amplifier
    Text: APPLICATION NOTE APT9801 By: Richard Frey, P.E. A Push-Pull 300 Watt Amplifier for 81.36 MHz Reprinted from the April 1998 issue of Applied Microwave and Wireless Magazine courtesy of Noble Publishing Crporation Power Amplifier A Push-Pull 300-watt Amplifier


    Original     		PDF APT9801 300-watt O-247 APT9801 ARCO 465 Compression Trimmer Capacitor arco mica trimmer amplifier circuit diagram ARF449A 2020N102J501P arf449 Noble trimmer ARF449B 250 watt amplifier

    LME49830

    Abstract: DG8 Transistor Yageo LME49830TB MFR Yageo KobiConn fairchild dg5 Header, 4 pin, 0.1 Inch Spacing BD13916STU ct Potentiometer
    Text: Bill of Materials for LME49830 EF125WT1 Reference Design 6/19/2008 Assembly Notes: - No special considerations. Reference Value Tolerance Type/Description Manufacturer Part Number CS1, CS2, CS3, CS4, CS10, CS11, CS9, CSN1 0.1 F 10% 250V, metalized polyester


    Original     		PDF LME49830 EF125WT1 ECQ-E2104KF EEU-FC2A471 CD15ED200J03 CD15ED300J03 ET01MD1ABE 156mil 161-0097-E DG8 Transistor Yageo LME49830TB MFR Yageo KobiConn fairchild dg5 Header, 4 pin, 0.1 Inch Spacing BD13916STU ct Potentiometer

    circuit diagram of a laser lighter

    Abstract: No abstract text available
    Text: Fiber Optic A/D Kit Instruction Manual Model Number: IF 545 Industrial Fiber Optics * Copyright 2012 by Industrial Fiber Optics, Inc. Revision H Printed in the United States of America * * * All rights reserved. No part of this publication may be reproduced,


    Original     		PDF

    United Detector Technology Photodiodes

    Abstract: No abstract text available
    Text: Fiber Optic A/D Kit Instruction Manual Model Number: IF 545 INDUSTRIAL FIBER OPTICS * Copyright 2012 by Industrial Fiber Optics, Inc. Revision H Printed in the United States of America * * * All rights reserved. No part of this publication may be reproduced,


    Original     		PDF

    H327

    Abstract: DC 0509 marking gain stage GaAs MMIC AMPLIFIER 327MS8GE HMC327MS8G HMC327MS8GE 250 watt amplifier
    Text: HMC327MS8G / 327MS8GE v06.1209 11 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Typical Applications Features The HMC327MS8G E is ideal for: High Gain: 21 dB • Wireless Local Loop Saturated Power: +30 dBm @ 45% PAE • WiMAX & Fixed Wireless Output P1dB: +27 dBm


    Original     		PDF HMC327MS8G 327MS8GE H327 DC 0509 marking gain stage GaAs MMIC AMPLIFIER 327MS8GE HMC327MS8GE 250 watt amplifier

    SPA-2118

    Abstract: MCH18 MCR03 TAJB106K020R SPA2118
    Text: Product Description SPA-2118 Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-2118 SPA-2118 IS-95 EDS-102012 MCH18 MCR03 TAJB106K020R SPA2118

    Untitled

    Abstract: No abstract text available
    Text: HMC327MS8G / 327MS8GE v06.1209 11 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Typical Applications Features The HMC327MS8G E is ideal for: High Gain: 21 dB • Wireless Local Loop Saturated Power: +30 dBm @ 45% PAE • WiMAX & Fixed Wireless Output P1dB: +27 dBm


    Original     		PDF HMC327MS8G 327MS8GE

    Untitled

    Abstract: No abstract text available
    Text: POWER RF MOSFET TRANSISTORS POLYFET RF DEVICES 1. Basic Considerations 1.1. Use a Printed Circuit Board - In most cases superior and more repeatable performance can be obtained using a printed circuit board with stripline inductors. It is also easier to maintain a good ground plane around the transistor.


    Original     		PDF

    uhf amplifier design

    Abstract: 2N6136 2N5945 Motorola equivalent transistor bc 172 b AN548A j411 Motorola ARCO 465 Compression Trimmer Capacitor 2N5946 MOTOROLA motorola an-282a application AN282A
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN548A/D SEMICONDUCTOR APPLICATION NOTE AN548A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Microstrip Design Techniques for


    Original     		PDF AN548A/D AN548A uhf amplifier design 2N6136 2N5945 Motorola equivalent transistor bc 172 b AN548A j411 Motorola ARCO 465 Compression Trimmer Capacitor 2N5946 MOTOROLA motorola an-282a application AN282A

    2N6136

    Abstract: uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A
    Text: Order this document by AN548A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN548A MICROSTRIP DESIGN TECHNIQUES FOR UHF AMPLIFIERS Prepared by: Glenn Young power gain of 16 dB and a bandwidth – 1 dB of 8 MHz. Overall efficiency is 48.5% and all harmonics are a minimum


    Original     		PDF AN548A/D AN548A 2N6136 uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A

    xr 2204

    Abstract: Amptek XR-100CR XR-100T-CZT RTD 1055 lemo 6 pin connector lemo connector LEMO px2cr 9pin D-connector
    Text: R AMP TEK All Solid State Design No Liquid Nitrogen s Landed on Mar 7 9 19 , 4 ly Ju FET Be Window Detector Temperature Monitor Cooler Mounting Stud • • • • • • Si-PIN Photodiode Thermoelectric Cooler Beryllium Window Hermetic Package TO-8 Wide Detection Range


    Original     		PDF XR-100CR xr 2204 Amptek XR-100T-CZT RTD 1055 lemo 6 pin connector lemo connector LEMO px2cr 9pin D-connector

    rca transistor manual

    Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
    Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­


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