AO4456
Abstract: 24V 20A SMPS SMPS 24V 24v 5a smps SMPS 30v 20a
Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AO4456
AO4456
00A/us
24V 20A SMPS
SMPS 24V
24v 5a smps
SMPS 30v 20a
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PDF
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AO4456
Abstract: No abstract text available
Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AO4456
AO4456
Drain-Sou25
00A/us
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PDF
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AOL1412L
Abstract: SMPS 24V AOL1412 24v 5a smps
Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AOL1412
AOL1412
AOL1412L
00A/us
SMPS 24V
24v 5a smps
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PDF
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Untitled
Abstract: No abstract text available
Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AOL1412
AOL1412
AOL1412L
00A/us
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Untitled
Abstract: No abstract text available
Text: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AOD490
AOD490
O-252
000A/us
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PDF
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AOL1702
Abstract: No abstract text available
Text: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AOL1702
AOL1702
AOL1702L
000A/us
0E-06
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AOL1702
Abstract: SRFE
Text: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AOL1702
AOL1702
SRFE
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AOD490
Abstract: SRFE transistor free B60100
Text: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AOD490
AOD490
O-252
SRFE
transistor free
B60100
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PDF
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Untitled
Abstract: No abstract text available
Text: AO4708 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4708
AO4708
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AON3702
Abstract: 24V 10A SMPS 24v 5a smps 24V 20A SMPS 05S400
Text: AON3702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON3702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AON3702
AON3702
AON3702is
AON3702L
AON3702L
00A/us
24V 10A SMPS
24v 5a smps
24V 20A SMPS
05S400
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PDF
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Untitled
Abstract: No abstract text available
Text: AON3702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON3702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AON3702
AON3702is
AON3702L
00A/us
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24v 2a smps
Abstract: LT1170 boost converter 12v dc 24V 20A SMPS ZTX107 ZTX107 transistor 24v 5a smps LT1170 boost converter dc LT1170 SMPS 24V ZTX949
Text: Design Note 33 Issue 1 April 1996 Isolating High Side Switch for Thermal Printer SMPS R1 L1 +12V d.c 60µH 68R 2.5W L2 D1 1N5821 Vin Vsw Q1 ZTX 949 +24V d.c 1.5µH R3 22k LT1170 Vfb Vc GND C1 68µF CONTROL SIGNAL 5.0V Q2 ZTX107 R6 C4 100µF C5 390µF C6 100µF
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1N5821
LT1170
ZTX107
LT1170
ZTX949
ZTX949
ZTX949,
ZTX107.
24v 2a smps
LT1170 boost converter 12v dc
24V 20A SMPS
ZTX107
ZTX107 transistor
24v 5a smps
LT1170 boost converter dc
SMPS 24V
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Untitled
Abstract: No abstract text available
Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4456
AO4456/L
AO4456
AO4456L
-AO4456L
00A/us
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PDF
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Untitled
Abstract: No abstract text available
Text: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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Original
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AO4708
AO4708
AO4708L
000A/us
0E-06
0E-03
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PDF
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AO4708
Abstract: No abstract text available
Text: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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Original
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AO4708
AO4708
AO4708L
Integ50
000A/us
0E-06
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PDF
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Untitled
Abstract: No abstract text available
Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4456
AO4456/L
AO4456
AO4456L
-AO4456L
00A/us
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PDF
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AOL1424
Abstract: AOL1426 AOL1426L max3064
Text: AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1426 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product
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AOL1426
AOL1426
AOL1426L
AOL1424
max3064
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ao4456
Abstract: AO4456l 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31
Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4456
AO4456/L
AO4456
AO4456L
-AO4456L
7716 mosfet
24V 20A SMPS
30V 20A smps
TYP31
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PDF
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Untitled
Abstract: No abstract text available
Text: AOD496 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD496 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.
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AOD496
AOD496
27ABC
AOD490
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AO4456
Abstract: No abstract text available
Text: AO4456 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AO4456
AO4456
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max3064
Abstract: AOL1426 AOL1426L
Text: AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1426 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product
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AOL1426
AOL1426L
max3064
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PDF
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AOL1428L
Abstract: AOL1428
Text: AOL1428 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1428 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product
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AOL1428
AOL1428
AOL1428L
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AOD490
Abstract: AOD496
Text: AOD496 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD496 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.
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Original
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AOD496
AOD496
O-252
AOD490
AOD490
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PDF
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AOD496
Abstract: No abstract text available
Text: AOD496 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD496 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product
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AOD496
AOD496
AOD496L
O-252
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PDF
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