SOJ-24
Abstract: SOJ24-P-300-1 HE1324
Text: 24P0J Plastic 24pin 300mil SOJ EIAJ Package Code SOJ24-P-300-1.27 Weight g 0.68 JEDEC Code – Lead Material Alloy 42 e b2 e1 e1 E HE 13 24 I1 I2 c D Recommended Mount Pad 1 Symbol 12 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2 I1 I2 Dimension in Millimeters
|
Original
|
PDF
|
24P0J
24pin
300mil
SOJ24-P-300-1
SOJ-24
HE1324
|
M5M5258DP
Abstract: M5M5258D J-12 M5M5258D-15 65536-WORD
Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M5258DP,J-12,-15,-20,-15L,-20L M5M5258DP,J-12,-15,-20,-15L,-20L 262144-BIT 65536-WORD BYBY 4-BIT CMOS STATIC RAM 262144-BIT (65536-WORD 4-BIT) CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M5258D is a family of 65536-word by 4-bit static RAMs,
|
Original
|
PDF
|
M5M5258DP
262144-BIT
65536-WORD
M5M5258D
J-12
M5M5258D-15
|
432W6
Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES LIST OF PACKAGE CODES CLASSIFIED ACCORDING TO PIN NUMBER 1. LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PIN NUMBER Pin Count Structure Type Lead Pitch mm 5 P P P P P P C C P P P C P P P P P P P P C P P P P P P P
|
Original
|
PDF
|
240K6X-A
240P6Y-A
240P6Z-A
255F7F
256F7B
256F7X-A/B
256P6J-E
256P6K-E
272F7X-A/B
281S8-C
432W6
48P4B
hssop
44P3W-R
28P0
5P5T
tsop 2-54
42P9R
70P3S-M
479F7G
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M5257EJ-10,-12 M5M5257EJ-10,-12 262144-BIT 262144-WORD BYBY 1-BIT CMOS STATIC RAM 262144-BIT (262144-WORD 1-BIT) CMOS STATIC RAM DESCRIPTION The M5M5257E is a family of 262144-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon-gate MOS
|
Original
|
PDF
|
M5M5257EJ-10
262144-BIT
262144-WORD
M5M5257E
M5M5257EJ
M5M5257EJ-10
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5M 5258P, J -3 5 , -4 5 , -4 5 L 2 6 2 1 4 4 -B IT 6 5 5 3 6 -W O R D BY 4 -B IT CMOS STATIC RAM DESCRIPTION The M5M5258P is a fa m ily o f 65536 w ord by 4 -b it static RAMs, fabricated w ith the high-performance CMOS silicongate MOS process and designed fo r high-speed application.
|
OCR Scan
|
PDF
|
5258P,
M5M5258P
M5M5258P,
J-45L
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5M 5189BP, J- I S ,-2 0 ,-2 5 65S36-BIT 16384-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION This is a fam ily o f 16384 w ord by 4 -b it static RAM s, fabri PIN CONFIGURATION (TOP VIEW) cated w ith the high-performance C M OS silicon-gate MOS
|
OCR Scan
|
PDF
|
5189BP,
65S36-BIT
16384-WORD
M5M5189BP,
65536-BIT
|
M5M5257CP
Abstract: No abstract text available
Text: MITSUBISHI LS Is M5M5257CP,J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M 5M 5257C is a fam ily o f 262144-w ord by 1-bit static PIN CONFIGURATION (TO P VIEW) 3AMs, fabricated w ith the high-performance CMOS silicongate
|
OCR Scan
|
PDF
|
M5M5257CP
262144-BIT
262144-WORD
5257C
262144-w
J-20L1
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5258AP,J-25,-30,-35,-45, -30L,-35L,-45L 262144-BIT 65536-W0RD BY 4-BIT CMOS STATIC RAM DESCRIPTION The M 5M 5258A is a fa m ily o f 65536 word by 4 -b it static PIN CONFIGURATION {TOP VIEW) RAMs, fabricated w ith the high-performance CMOS silicongate MOS process and designed fo r high-speed application.
|
OCR Scan
|
PDF
|
M5M5258AP
262144-BIT
65536-W0RD
5258AP,
5258AP.
J-301.
|
Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I LSIs M5M5188BP, J-15, -20, -25 6 5 5 3 6 - B I T 1 6 3 8 4 - W O R D B Y 4 - B IT C M O S S T A T IC R A M DESCRIPTION This is family of 16384 word by 4-bit static RAMs, fabri cated with the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These
|
OCR Scan
|
PDF
|
M5M5188BP,
M5M5188BP
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs P f f iM t m m ñ W f '* M 5 M 5 6 4 R 1 6 C J ,T P -1 0 ,-1 2 ,-1 5 Notice: T h is is not a fin al specification. S om e p aram e tric lim its are su bje ct to ch an ge -| 048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW)
|
OCR Scan
|
PDF
|
048576-BIT
65536-WORD
16-BIT)
M5M564R16C
16-bit
24P0J
J24-P-300-1
|
M5M5187
Abstract: VCC10A
Text: MITSUBISHI LSIs M 5 M 5 1 8 7 B P , J -1 5 , - 2 0 , - 2 5 6 5 5 3 6 - B I T 6 5 5 3 6 -W O R D BY l-B IT C M O S STATIC RAM DESCRIPTION This is fa m ily o f 65536-word by 1-bit static RAMs, fa b ri cated w ith the high-performance CMOS silicon-gate MOS
|
OCR Scan
|
PDF
|
M5M5187BP,
65536-BIT
65536-WORD
500mV
M5M5187
VCC10A
|
65536word
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5258EJ-10,-12 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5M 5258E is a fam ily o f 65536-w ord by 4-bit static RAMs, fa b rica te d w ith th e h ig h -p erform a n ce C M O S siiico n -g a te M OS
|
OCR Scan
|
PDF
|
M5M5258EJ-10
262144-BIT
65536-WORD
5258E
65536-w
5258EJ-10
AO-15
65536word
|
Untitled
Abstract: No abstract text available
Text: blE ]> • bEM^flES 0Q1727D BbT ■ M I T I MITSUBISHI LSIs M5M5258P, J-35, -45, -55 2 6 2 1 4 4 -B IT 6 5 5 3 6 -W O R D BY 4 -B IT CMOS STATIC RAM MITSUBISHI ( HEPIORY/ASIC ) DESCRIPTION The M 5M 5258 is a fa m ily o f 65536 w ord by 4 -b it static RAMs, fabricated w ith the high-performance CMOS silicon-
|
OCR Scan
|
PDF
|
0Q1727D
M5M5258P,
M5M5258P.
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5258AP, AJ-25, -30 2 6 2 1 4 4 -B IT 6 5 5 3 6 -W O R D BY 4 -B IT CMOS STATIC RAM DESCRIPTION The M 5M 5258A is a family of 65536 word by 4-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high-performance CMOS silicongate MOS process and designed for high-speed application.
|
OCR Scan
|
PDF
|
M5M5258AP,
AJ-25,
AJ-25
AJ-30
262144-BIT
65536-WORD
|
|
|
Untitled
Abstract: No abstract text available
Text: I b2HTöSS DDEMBHS 111 • M I T I MITSUBISHILSIs M5M5258BP,J-15,-17,-20,-25,-35, -20L,-25L,-35L, 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION The M5M5258B is a family of 65536 word by 4-bit static RAMs, fabricated with the high-performance CMOS silicongate
|
OCR Scan
|
PDF
|
M5M5258BP
262144-BIT
65536-WORD
M5M5258B
M5M5258BP,
J-20L,
|
Untitled
Abstract: No abstract text available
Text: öSM5 M5257 BP,BJ-15,-20 MITSUBISHI LS Is J k .* .i, 2 1 4 4 - B IT 2 6 2 144-W O R D BY 1 -B IT CMOS STATIC RAM DESCRIPTION The M 5 M 5 2 5 7 B is a fa m ily o f 26 2144 -w o rd by 1-bit static PIN CONFIGURATION (TOP VIEW) RAM s, fabricated w ith the high-performance C M O S silicongate M O S process and designed fo r high-speed application.
|
OCR Scan
|
PDF
|
M5257
BJ-15
BJ-20
BJ-15
M5M5257BP
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5257AP, AJ-25, -30 2 6 2 1 4 4 -B IT 2 6 2 1 4 4 -W O R D BY 1 -B IT CMOS STATIC RAM DESCRIPTION P IN C O N F IG U R A T IO N The M 5M 5257A is a family of 262144-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicongate MOS process and designed for high-speed application.
|
OCR Scan
|
PDF
|
M5M5257AP,
AJ-25,
262144-word
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs Rev. 3.0 M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT 524288-WORD BY 8-BIT DYNAMIC RAM PIN CONFIGURATION ( TOP VIEW ) D E SC R IP T IO N This is a family of 524288-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for large-capacity
|
OCR Scan
|
PDF
|
M5M44800CJ
4194304-BIT
524288-WORD
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 5 2 5 8 E J - 1 0 ,- 1 2 p f t E lA .„p iw » ft * . wrtvrts £0*0 P»iB 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5M 5258E is a family of 65536-word by 4-bit static RAMs, fabricated with the high-performance C M O S silicon-gate MOS
|
OCR Scan
|
PDF
|
262144-BIT
65536-WORD
5258E
5258EJ-10
500mV
M5M5258EJ-10
002TbD3
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs _cOtìCr ‘' \ M 5 M 5 V 2 5 7 D P ,J -1 5 ,-2 0 ,-2 5 *o cA'11*' , r.o"' ä d i”’a' , ï 9»W*' 5^ î40^tt ',y ^ in ' SoiW f 3 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M 5M5V257D is a family of 262144-word by 1-bit static RAMs,
|
OCR Scan
|
PDF
|
262144-BIT
262144-WORD
5M5V257D
5V257D
DG2bG71
M5M5V257DP
J-15r
|
M5M4C264AL
Abstract: m5m4c264
Text: MITSUBISHI LSIs M5M4C264AL,J-8,-10,-12 2 6 2 1 4 4 -B IT DUAL-PORT DYNAMIC RAM DESCRIPTIO N T h e M its u b is h i M 5 M 4 C 2 6 4 A is a h ig h spe ed 2 6 2 , 1 4 4 - b it Dual P o rt PIN C O N F IG U R A T IO N TOP V IE W D y nam ic M e m o ry equipped w ith a 6 4 K x 4
|
OCR Scan
|
PDF
|
M5M4C264AL
m5m4c264
|
AJ30
Abstract: No abstract text available
Text: MITSUBISHI LSI* M5M5257AP, AJ-25, -30 2 6 2 144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION P IN C O N FIG U R A TIO N (A * U « a 2 - E a 3 - E As - E Ä9 - < i CONTROL IN P U T ADDRESS IN P U TS 1 W R ITE , 6 4 < , A D A T A OUTPUT a - a 6 1 E
|
OCR Scan
|
PDF
|
M5M5257AP,
AJ-25,
144-BIT
262144-WORD
M5M5257A
5257AP
5257AJ
5257AP,
AJ30
|
M5M5257DJ
Abstract: M5M5257DJ-20L m5m5257dj20 M5M5257DP-20L M5M5258DP-15 m5m5258dp15 M5M5258DJ-20 M5M5408AFP-10VLL M5M5257DP-20 M5M5257DP20
Text: Low power dissipation static RAMs Low voltage operation (Continued) Memory capacity Memory Configuration Max. access time im i Function mode 85 Low voltage Operation (3.0 to 3.6V) Ice (Power down) = 50 ft A (max) = 0.4 ¡1 A (typ) Î00 Type No, pÄ M5M5408AFP-8SVL
|
OCR Scan
|
PDF
|
32P2M-A
32P3Y-H
32P3Y-J
32P3Y-J
M5M5408AFP-8SVL
M5M5408ATP-85VL
M5M540BART-85VL
M8M5408AFP-1QVL
M5M5257DJ
M5M5257DJ-20L
m5m5257dj20
M5M5257DP-20L
M5M5258DP-15
m5m5258dp15
M5M5258DJ-20
M5M5408AFP-10VLL
M5M5257DP-20
M5M5257DP20
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5187BP, J-15, -20, -25 6 5 5 3 6 -B IT 6 5 5 3 6 - WORD BY 1-BIT CM0S STATIC RAM DESCRIPTION P IN This is family of 65536-word by 1-bit static RAMs, fabri cated with the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These
|
OCR Scan
|
PDF
|
M5M5187BP,
65536-word
|