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    24JUNE2004 Search Results

    24JUNE2004 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    W26NM60

    Abstract: w26nm60 equivalent STW26NM60
    Text: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM60 • ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY


    Original     		PDF STW26NM60 O-247 W26NM60 w26nm60 equivalent STW26NM60

    W26NM50

    Abstract: STW26NM50
    Text: STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM50 • ■ ■ ■ Figure 1: Package VDSS RDS on ID 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY


    Original     		PDF STW26NM50 O-247 W26NM50 STW26NM50

    W30NM60D

    Abstract: ZVS phase-shift converters W30NM60 STW30NM60D Fast Recovery Bridge 25C312
    Text: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh MOSFET Table 1: General Features TYPE STW30NM60D • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600 V < 0.145 Ω 30 A TYPICAL RDS(on) = 0.125 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STW30NM60D O-247 W30NM60D ZVS phase-shift converters W30NM60 STW30NM60D Fast Recovery Bridge 25C312

    W30NM60

    Abstract: ZVS phase-shift converters STW30NM60D W30NM60D mosfet 600V 30A JESD97 25C312
    Text: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge


    Original     		PDF STW30NM60D O-247 W30NM60 ZVS phase-shift converters STW30NM60D W30NM60D mosfet 600V 30A JESD97 25C312

    w26nm60 equivalent

    Abstract: w26nm60 STW26NM60
    Text: STW26NM60 N-CHANNEL 600V - 0.125Ω - 30A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM60 • ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY


    Original     		PDF STW26NM60 O-247 w26nm60 equivalent w26nm60 STW26NM60

    W26NM50

    Abstract: STW26NM50
    Text: STW26NM50 N-CHANNEL 500V - 0.10Ω - 30A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM50 • ■ ■ ■ Figure 1: Package VDSS RDS on ID 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY


    Original     		PDF STW26NM50 O-247 W26NM50 STW26NM50

    STW30NM60D

    Abstract: JESD97 ZVS phase-shift converters mosfet 600V 100A ST 15A16s W30NM60 W30NM60D 25C312
    Text: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge


    Original     		PDF STW30NM60D O-247 STW30NM60D JESD97 ZVS phase-shift converters mosfet 600V 100A ST 15A16s W30NM60 W30NM60D 25C312

    Tape Resistivity 10E8 Ohm 10E4

    Abstract: STMicroelectronics smd marking code smd diode order marking code stmicroelectronics 10E12 10E4 10E8 AN1235 IEC286-3 J-STD-020A Lead Free reflow soldering profile BGA
    Text: AN1235 APPLICATION NOTE ASD and IPAD™ FLIP-CHIP: PACKAGE DESCRIPTION AND RECOMMENDATIONS FOR USE I - INTRODUCTION The competitive market of portable equipment, notably the mobile phone market, is driven by a challenging development of highly integrated products. To allow manufacturers of portable equipment to reduce


    Original     		PDF AN1235 Tape Resistivity 10E8 Ohm 10E4 STMicroelectronics smd marking code smd diode order marking code stmicroelectronics 10E12 10E4 10E8 AN1235 IEC286-3 J-STD-020A Lead Free reflow soldering profile BGA

    STW30NM60D

    Abstract: 15a diode W30NM60 ZVS phase-shift converters W30NM60D
    Text: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh MOSFET Table 1: General Features TYPE STW30NM60D • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600V < 0.145Ω 30A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STW30NM60D O-247 O-247 STW30NM60D 15a diode W30NM60 ZVS phase-shift converters W30NM60D

    W26NM60

    Abstract: w26nm60 equivalent STW26NM60 B2 marking code Zener zener 200a
    Text: STW26NM60 N-CHANNEL 600V - 0.125Ω - 30A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM60 • ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY


    Original     		PDF STW26NM60 O-247 W26NM60 w26nm60 equivalent STW26NM60 B2 marking code Zener zener 200a

    BACC65BC12

    Abstract: bacc65bc12na BACC65Bc BACC65BC12a 1445693-4 BACC65BC12N
    Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT - RELEASED FOR PUBLICATION BY - 6 5 4 3 2 - LOC - ALL RIGHTS RESERVED. 1 REVISIONS DIST - P LTR N SEE JACKSCREW DETAILS .003 +.001 .672 -.002 .000 .003 .003 .003 .003 .003 .702 .885 1.067 1.250 .003 .337 .520 .003


    Original     		PDF 24JUNE2004 BACC65BC12 bacc65bc12na BACC65Bc BACC65BC12a 1445693-4 BACC65BC12N

    BACC65BC12

    Abstract: bacc65a BACC65BC12AA BACC65 BACC65bc BACC65AF bacc65B BACC65BC12a STA5
    Text: TH I S D R A W I NG IS UNPUBL IS H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS FOR CORPORATION, ALL PUBLICATION RIGHTS LOC RESERVED. DF REV I S I O N S D I ST A5 D E S C R I P T I ON REV PER ECO -0 1 3 3 5 3 CT -27- ER A} C3 <o <o A} C3 <o o o


    OCR Scan     		PDF 24JUNE2004 BACC65BC12 bacc65a BACC65BC12AA BACC65 BACC65bc BACC65AF bacc65B BACC65BC12a STA5