Untitled
Abstract: No abstract text available
Text: 2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2670 Unit: mm High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications • Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Absolute Maximum Ratings (Ta = 25°C)
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2SC2670
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2SC3113
Abstract: No abstract text available
Text: 2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA max • Small package
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2SC3113
2SC3113
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2SC2458 GR
Abstract: 2SC2458 2SA1048
Text: 2SC2458 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 Unit: mm • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
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2SC2458
2SA1048
2SC2458 GR
2SA1048
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2SC2458
Abstract: 2SC2458 GR 2sc2458l 2SA1048
Text: 2SC2458 L シリコンNPNエピタキシャル形 (PCT方式) 東芝トランジスタ 2SC2458(L) ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 • • • • • • 単位: mm 小型パッケージでマイクロモータなどの小型機器の設計に適しています。
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2SC2458
2SA1048
2SC2458 GR
2sc2458l
2SA1048
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2SC5765
Abstract: No abstract text available
Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 Medium Power Amplifier Applications Strobo Flash Applications Low Saturation Voltage: Unit: mm VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic
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2SC5765
2SC5765
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2SC2710
Abstract: 2SA1150
Text: 2SC2710 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2710 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)
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2SC2710
2SA1150
2SC2710
2SA1150
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2SA1049
Abstract: 2SC2459
Text: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
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2SA1049
2SC2459.
2SA1049
2SC2459
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RN1201
Abstract: RN1202 RN1203 RN1204 RN1205 RN1206 RN2201
Text: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design
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RN1201
RN1206
RN1202
RN1203
RN1204
RN1205
RN2201
RN1201
RN1206
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2SA1048
Abstract: 2SC2458 2sa1048 transistor
Text: 2SA1048 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1048 Audio Frequency Amplifier Applications Unit: mm • Small package • High voltage: VCEO = −50 V (min) • High hFE: hFE = 70~400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
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2SA1048
2SC2458
2SA1048
2SC2458
2sa1048 transistor
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2SA1049
Abstract: 2SC2459 transistor 2sc2459
Text: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
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2SC2459
2SA1049.
2SA1049
2SC2459
transistor 2sc2459
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2SC5720
Abstract: No abstract text available
Text: 2SC5720 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5720 ○ 中電力増幅用 ○ ストロボ用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = 0.25 V (最大) (IC = 3 A/IB = 60 mA) 絶対最大定格 (Ta = 25°C)
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2SC5720
2SC5720
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RN1210
Abstract: RN2210 RN2211
Text: RN2210,RN2211 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2210,RN2211 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
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RN2210
RN2211
RN1210,
RN1210
RN2211
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2SA1150
Abstract: 2SC2710
Text: 2SA1150 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1150 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)
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2SA1150
2SC2710
2SA1150
2SC2710
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RN1202
Abstract: RN1206 RN1204 RN1201 RN1203 RN1205 RN2201 equivalent transistor 1204
Text: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors. Simplify circuit design
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RN1201
RN1206
RN1202
RN1203
RN1204
RN1205
RN2201
RN1201
RN1206
equivalent transistor 1204
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3327 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3327 Unit in mm OR MUTING AND SWITCHING APPLICATIONS • • • • High Emitter-Base Voltage : V e b q = 25V Min. High Reverse hpE : hp^ = 150(Typ.) (V q e = —2V, I q = —4mA) Low On Resistance : R q n = 1H (Typ.) (Iß = 5mA)
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2SC3327
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC3113 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C3 1 1 3 Unit in mm FOR AUDIO AM PLIFIER AND SWITCHING APPLICATIONS • • • • High DC Current Gain High Breakdown Voltage High Collector Current Small Package 4.2MAX. hpE = 600~3600 VCEO = 50V
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2SC3113
150mA
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Untitled
Abstract: No abstract text available
Text: 2SA1297 TOSHIBA 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. — I . • • Low Saturation Voltage : V@e (sat)= -0.5V (Max.) @Iq = -2 A Complementary to 2SC3267.
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2SA1297
2SC3267.
961001EAA2'
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transistor 2sc2459
Abstract: 2SC2459
Text: TOSHIBA 2SC2459 TO SHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 Unit in mm A U D IO AMPLIFIER APPLICATIONS | High Breakdown Voltage : V qeq = 120V (Min.) High DC Current Gain : hpE = 200~700 Excellent hpg Linearity : hpE (Ic = 0.1mA) / hjrg (Iq = 2mA) = 0.95 (Typ.)
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2SC2459
2SA1049.
transistor 2sc2459
2SC2459
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0723
Abstract: l1998
Text: T O S H IB A RN1210,RN1211 T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1210, RN1211 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIO NS 4.2MAX. • • • • With Built-in Bias Resistors Simplify Circuit Design
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RN1210
RN1211
RN1210,
RN2210,
RN2211
0723
l1998
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RN2223
Abstract: ko iq
Text: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)
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RN2221-RN2227
RN2221,
RN2222,
RN2223,
RN2224
RN2225,
RN2226,
RN2227
--800mA)
RN1221
RN2223
ko iq
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Untitled
Abstract: No abstract text available
Text: TO SHIBA RN1207-RN1209 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1207, RN1208, RN1209 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors Simplify Circuit Design
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RN1207-RN1209
RN1207,
RN1208,
RN1209
RN2207
RN2209
RN2208
RN2209
RN1207
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1223 equivalent
Abstract: No abstract text available
Text: RN1221,1222,1223 RN1224,1225 RN1226,1227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mni AND DRIVER CIRCUIT APPLICATIONS. 4.2MAX. . High Current Type Ic(MAX =800mA) . With Built-in Baias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts Manufacturing Process
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RN1221
RN1224
RN1226
800mA)
RN2221-2227
RN1222
RN1223
RN1225
1223 equivalent
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Untitled
Abstract: No abstract text available
Text: TO SHIBA RN2207-RN2209 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2207, RN2208, RN2209 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors Simplify Circuit Design
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RN2207-RN2209
RN2207,
RN2208,
RN2209
RN1207
RN2207
RN2208
RN2209
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Untitled
Abstract: No abstract text available
Text: T O S H IB A RN1201 ~ R N 1 206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1201, RN1202, RN1203, RN 1204, RN1205, RN1206 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 4 .8 M A X . • W ith Built-in Bias Resistors
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RN1201
RN1201,
RN1202,
RN1203,
RN1205,
RN1206
RN2201
RN1202
RN1203
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