upc 1185 h
Abstract: mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E
Text: Outline of Anritsu Corporation p.2 Quality, Reliability Assurance System, and Effort for Environmental Considerations p.3 How to Use This Catalog p.4 Sales, Shipping, and Service Information p.5 Sales Network p.6 Index p.7 Model Number Index p.9 New Products Descriptions
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Original
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AS3B119GM10M
AS5B125EM50M
AS6B118GM50M
1310nm)
1550nm)
upc 1185 h
mobis
Delay linear sweep generator using 555 timer
Anritsu ML524B operation manual
for vip tracking gsm and gps technology
26UA42
MU909014A1
nokia 2700 classic circuit diagram
MF2400C
MA8120E
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PDF
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IMSM514400
Abstract: GG13 MSM temperature spec MSM514400 MSM514400-10 MSM514400-70 MSM514400-80 D013007
Text: 5fl E » • b?24B40 O K I O K I s e m i c o n d □ D 1 2 ti tn OKIJ 042 S E MI C O N D U C T O R GROUP u - c t o r r - ^ - 2 3 - i g M S M 5 1 4 4 0 0 _ 1,048,576-Word x 4-Bit DYNAMIC RAM: FAST PAGE MODE TYPE_
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24b40
MSM514400_
576-Word
MSM514400
26-pin
20-pin
IMSM514400
GG13
MSM temperature spec
MSM514400-10
MSM514400-70
MSM514400-80
D013007
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PDF
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MSM511000
Abstract: ZIP20-P-400 msm511000h
Text: O K I Semiconductor MSM5 1 1 0 0 0 H_ _ 1,048,576-W ord x 1-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E D ESCRIPTIO N The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power
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MSM511000H_
576-Word
MSM511000H
18-pin
26/20-pin
20-pin
MSM511000
ZIP20-P-400
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Untitled
Abstract: No abstract text available
Text: OPA623 B U R R - B R O W N AVAILABLE IN DIE Wide Bandwidth, Current-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • BANDWIDTH: 350MHz, 2.8Vp-p HIGH OUTPUT CURRENT: ±70mA SLEW RATE: 2100V/ns, 5Vp-p DIFFERENTIAL GAIN/PHASE: 0.12%/0.05°
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OPA623
350MHz,
100V/ns,
OPA623
AMPLIFIERS23
10ns/div
17313b5
0024bb3
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Untitled
Abstract: No abstract text available
Text: O K I electronic components QL360N-5_ 1.3 urn High-Power Laser-Diode DIP Module G E N E R A L D ESC R IP TIO N The OL360N-5 is a 1.3 im, high-power laser diode DIP module with a single-mode fiber pigtail. The high-performance Oki laser diode achieved a single-mode fiber output of over 5 mW.
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QL360N-5_
OL360N-5
b724240
QD224b2
h5200
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PDF
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1X3 diode
Abstract: 04ti
Text: O K I electronic components PC I 1X2, 1X3 SERIES Unidirectional Optical M O S Relay GENERAL DESCRIPTION The OCM1X2 and OCM1X3 Series are unidirectional DC optical MOS relays, offering lower drive current than the OCM1XO / 1X1 Series. The input portion is a Ga As infrared light emitting diode. The
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OCR Scan
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10-mA
b72424D
24E4G
L7E4240
1X3 diode
04ti
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM7503 Multi-Function PCM C O D E C GENERAL DESCRIPTION The MSM7503 is a high performance, low power CODEC LSI device integrating a 2-wire time division transmission ping-pong transmission interface function and has a basic function of
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OCR Scan
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MSM7503
MSM7503
MSM7502.
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PDF
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Untitled
Abstract: No abstract text available
Text: OKI electronic components O C360 PHOTO COUPLER GEN ERA L DESCRIPTION The OC360 is a photocoupler formed by combining a GaAs infrared light emitting diode and a phototransistor into a two-channel configuration. Encased in an 8-pin plastic package, the CXZ360 is
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OCR Scan
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OC360
CXZ360
E86831
OC360
24B40
L724240
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PDF
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S4-6V
Abstract: 26-PIN
Text: O K I Semiconductor MSM5 1V4 10 O/SL 4,194,304-W ord x 1-Bit D Y N A M IC R A M DESCRIPTION The MSM51V4100/SL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit configuration. The technology used to fabricate the MSM 51V4100/SL is OKI's CMOS silicon gate
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OCR Scan
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MSM51V4100/SL
304-Word
MSM51V4100/SL
1024cycles/16ms,
128ms
b724240
S4-6V
26-PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I electronic components T36_ Silicon Planar Phototransistor GEN ERAL DESCRIPTION The planar structure of the OKI T36 silicon phototransistor provides a high degree of sensitivity. The T36 has wide application for a compact and light-weighted package.
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Q01flc
24B40
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PDF
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RC5 IR-E
Abstract: MSM514100-10 MSM514100-70 MSM514100-80 Fast Cycle RAM
Text: Sfl E D • b T S M S 1!^ O O I S T S ? O K I O K I s e m i c o n d u ^ 3 «O KIJ S E MI C O ND U C T O R c t o r T - 4 GROUP & - z s - i s " M S M 5 1 4 1 0 0 _ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE G E N ER A L DESCRIPTIO N
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OCR Scan
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242i4Q
-zs-ts-MSM514100
304-Word
MSM514100
MSIVT514100
26-pin
20-pin
18-pin
RC5 IR-E
MSM514100-10
MSM514100-70
MSM514100-80
Fast Cycle RAM
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301767
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 1664 A/AL 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The MSM511664A/AL is a new generation dynamic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the MSM511664A/AL is OKI's CMOS silicon gate process technology.
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536-Word
16-Bit
MSM511664A/AL
16-bit.
cycles/32ms
b724240
301767
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PDF
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TG714
Abstract: msm7 MSM7508B MSM7509B MSM7541 MSM7542 MSM7566 MSM7567
Text: O K I Semiconductor MSM7566/7567 Single Rail CODEC GENERAL DESCRIPTION The MSM7566 and MSM7567 are single-channel CODEC CMOS ICs for voice signals ranging from 300 to 3400 Hz. These devices contain filter for A /D and D /A conversion. Designed especially for a single-power supply and low -pow er applications, these devices are
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MSM7566
MSM7567
MSM7567
MSM7508B
MSM7509B.
00214S1
TG714
msm7
MSM7509B
MSM7541
MSM7542
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PDF
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MSM6815
Abstract: j 6815 MSM6814 E137A
Text: O K I Semiconductor MSM6 8 1 4 /6 8 1 5 Single Chip CODEC with Time Slot Assignment GENERAL DESCRIPTION The M SM 6814 and M SM 6815 are single chip CO DEC w ith tim e slot assignm ent TA CO D EC w hich are fabricated by O ki's low pow er consum ption CM O S silicon gate technology.
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MSM6814
MSM6815
b724S40
MSM6815
j 6815
E137A
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM7515/7516 Multi-Function Telecommunication LSI G E N E R A L DESCRIPTION The MSM7515/7516 provides three kinds of functions which are often applied for telephone terminal equipment. Those are DTMF generator, DTMF receiver and low speed 1200 bps FSK modem defined as V.
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OCR Scan
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MSM7515/7516
MSM7515/7516
version-MSM6888B-provides
MSM7516
511PN
b72424D
DDP213L
QD22137
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PDF
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HA 16630
Abstract: 910nm Infrared Emitting Diode OLD224 INFRARED EMITTING DIODE TO18 1000 nm light emitting diode
Text: O K I electronic OLD224 components GaAlAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD224 is a high-output GaAl As infrared light em ission micro-diode sealed w ith a transparent epoxy resin in a TO-18 case. Its light em ission w ave length is peaks at 910 nm. Because of its high
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OCR Scan
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OLD224
OLD224
b754240
001603b
L72H240
HA 16630
910nm
Infrared Emitting Diode
INFRARED EMITTING DIODE TO18
1000 nm light emitting diode
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PDF
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4BM0
Abstract: 009 1155 s1z mixer KGF1155 KGF1155B
Text: OKI electronic components KGF1 1 5 5 B/ 1 1 5 5 Small-Signal Amplifier for UHF-Band and PCS Frequencies GENEFtAL DESCRIPTION The K G F1155B is a sm all-signal U H F band am p lifier that features low noise and low current operation. The K G F1155B specifications are guaranteed b y the fixed m atching circuit of 5 V and
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KGF1155B/1155
F1155B
F1155
F1155B,
KGF1155B
4BM0
009 1155
s1z mixer
KGF1155
KGF1155B
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PDF
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msc23136c
Abstract: DS1060 MSC23136
Text: O K I Semiconductor MSC2 3 1 3 6 C/CL-XXBS1 0 /P S 10 1,048,576-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23136C/CL-xxBS10/DS10 is a fully decoded 1,048,576-w ord x 36-bit CMOS Dynamic Random Access M emory M odule com posed of eight 4-Mb DRAMs 1M x 4 in SOJ
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OCR Scan
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MSC23136C/CL-XXBS10/DS10
576-Word
36-Bit
MSC23136C/CL-xxBS10/DS10
72-pin
MSC23136C/CL-xxBS10:
msc23136c
DS1060
MSC23136
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23S132B/BL-XXBS8/DS8 1,048,576-Word by 32-Bit DRAM Module: Fast Page Mode D E S C R IP TIO N The OKI M SC 23S132B/BL -xxBS8/D S8 is a fully decoded 1,048,576-word x 32-bit CM OS Dynamic Ran dom Access M em ory M odule com posed of eight 4-M b D RAM s in SO J M SM 514400B /B L packages
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MSC23S132B/BL-xxBS8/DS8
576-Word
32-Bit
MSC23S132B
MSM514400B/BL)
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V16800A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM51V16800A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16800A is
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MSM51V16800A
152-Word
MSM51V16800A
28-pin
cycles/64
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PDF
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20-PIN
Abstract: 26-PIN ZIP20-P-400
Text: O K I Semiconductor M SM 514400B/BL 1 ,0 4 8 , 576-Word x 4 - B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514400B/BL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology u sed to fabricate the M SM 514400B/BL is O K I's C M O S silicon gate process technology.
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OCR Scan
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MSM514400B/BL
576-Word
MSM514400B/BL
1024cycles/16ms,
1024cycles/128ms
b7E4E40
20-PIN
26-PIN
ZIP20-P-400
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PDF
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L70b
Abstract: No abstract text available
Text: O K I Semiconductor MSM514410B/BL_ _ 1,048,576-Word x 4-Bit D YN AM IC RAM : FA S T P A G E M O D E T Y P E WRITE P ER BIT DESCRIPTION The MSM514410B/BL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514410B/BL is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM514410B/BL_
576-Word
MSM514410B/BL
1024cycles/16ms,
1024cycles/128ms
MSM51441OB/BL
7242M0
L70b
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM27C231ZB_ 262,144-Word x 8-Bit Low-Voltage One Time PROM DESCRIPTION The MSM27C231ZB is a 2 Mb electrically Programmable Read-Only Memory organized as 262,144 words x 8 bits. The MSM27C231ZB operates on a single 3.3 V power supply and is TTL compatible. Since the
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MSM27C231ZB_
144-Word
MSM27C231ZB
MSM27C231ZB
32-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM531031B_ 131,072-Word x 8-Bit Low-Voltage Mask ROM DESCRIPTION The OKI MSM531031B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 8-bit capacity. The MSM531031B operates on a single 3.0 V or 3.3 V power supply but offers the same fast access times
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OCR Scan
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MSM531031B_
072-Word
MSM531031B
MSM531021B
32-pin)
B4240
MSM531031B
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PDF
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