Untitled
Abstract: No abstract text available
Text: F-214 Rev 24JAN14 S1SST–20–28–GF–03.00–D S1SS–20–28–GF–03.00–D (1,00 mm) .03937" S1SS, S1SST SERIES MICRO CABLE ASSEMBLY SPECIFICATIONS Mates with: T1M For complete specifications see www.samtec.com?S1SS Insulator Material: Nylon Contact Material:
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F-214
24JAN14)
VAC/353
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-10ETF02S-M3, VS-10ETF04S-M3, VS-10ETF06S-M3 Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 10 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to
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Original
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VS-10ETF02S-M3,
VS-10ETF04S-M3,
VS-10ETF06S-M3
J-STD-020,
O-263AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: VSMB10940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • • • • • • • • • • • • • • • DESCRIPTION VSMB10940X01 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well MQW technology with
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Original
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VSMB10940X01
VSMB10940X01
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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RR1005
Abstract: No abstract text available
Text: TNPW www.vishay.com Vishay Lead Pb -Bearing High Stability Thin Film Chip Resistors FEATURES • Metal film layer on high quality ceramic • SnPb termination plating, Pb content > 6 % • Excellent overall stability at different environmental conditions 0.05 % (1000 h rated power at 70 °C)
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Original
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TNPW0402
TNPW0603
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
RR1005
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-10ETF02S-M3, VS-10ETF04S-M3, VS-10ETF06S-M3 Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 10 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to
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Original
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VS-10ETF02S-M3,
VS-10ETF04S-M3,
VS-10ETF06S-M3
J-STD-020,
O-263AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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WSBM8518
Abstract: No abstract text available
Text: WSBM8518 www.vishay.com Vishay Dale Power Metal Strip Battery Shunt Resistor W/Molded Enclosure Very Low Value 100 FEATURES • High power to resistor size ratio • Proprietary processing technique extremely low resistance values produces • All welded construction
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Original
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WSBM8518
MX150
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
WSBM8518
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PDF
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Untitled
Abstract: No abstract text available
Text: VSMB11940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • • • • • • • • • • • • • • • DESCRIPTION VSMB11940X01 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well MQW technology with
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Original
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VSMB11940X01
VSMB11940X01
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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