MAX2821
Abstract: MAX2820 MAX2820ETM MAX2820ETM-TD
Text: 19-2493; Rev 4; 4/04 2.4GHz 802.11b Zero-IF Transceivers Features The MAX2820/MAX2820A and MAX2821/MAX2821A single-chip zero-IF transceivers are designed for the 802.11b 11Mbps applications operating in the 2.4GHz to 2.5GHz ISM band. The transceivers are
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MAX2820/MAX2820A
MAX2821/MAX2821A
11Mbps)
MAX2821
MAX2821A
MAX2820A/
MAX2821A
MAX2820/
MAX2821.
MAX2820
MAX2820ETM
MAX2820ETM-TD
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MAX2821ETM TD
Abstract: TOKO VARIABLE INDUCTOR 2.4GHz RECEIVER IC MAX2820 MAX2820ETM MAX2820ETM-TD MAX2821 circuit diagram of 6 channel 2.4ghz rf receiver 2483MHz 2.4GHZ synthesizer
Text: 19-2493; Rev 5; 5/05 2.4GHz 802.11b Zero-IF Transceivers The MAX2820/MAX2820A and MAX2821/MAX2821A single-chip zero-IF transceivers are designed for the 802.11b 11Mbps applications operating in the 2.4GHz to 2.5GHz ISM band. The transceivers are nearly identical, except the MAX2821 and MAX2821A
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MAX2820/MAX2820A
MAX2821/MAX2821A
11Mbps)
MAX2821
MAX2821A
MAX2820A/
MAX2821A
MAX2820/
MAX2821.
MAX2821ETM TD
TOKO VARIABLE INDUCTOR
2.4GHz RECEIVER IC
MAX2820
MAX2820ETM
MAX2820ETM-TD
circuit diagram of 6 channel 2.4ghz rf receiver
2483MHz
2.4GHZ synthesizer
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2.4GHz rc radio circuit diagram
Abstract: 75Mhz 4 channel rc receiver ic MAX2821ETM TD 2.4GHz amplifier schematic circuit diagram for simple RF transmitter Motorola transceiver chip 100 MHz to 4GHz transistor 2.4GHz amplifier schematic MAX2242 MAX2820 MAX2820EGM-TD
Text: 19-2493; Rev 2; 11/03 2.4GHz 802.11b Zero-IF Transceivers The MAX2820/MAX2821 single-chip zero-IF transceivers are designed for the 802.11b 11Mbps applications operating in the 2.4GHz to 2.5GHz ISM band. The transceivers are nearly identical, except the MAX2821 provides a low-power shutdown mode and an analog
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MAX2820/MAX2821
11Mbps)
MAX2821
MAX2820
MAX2820/MAX2821
2.4GHz rc radio circuit diagram
75Mhz 4 channel rc receiver ic
MAX2821ETM TD
2.4GHz amplifier schematic
circuit diagram for simple RF transmitter
Motorola transceiver chip 100 MHz to 4GHz
transistor 2.4GHz amplifier schematic
MAX2242
MAX2820EGM-TD
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NTE135A
Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Text: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.
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NTE109
NTE116
NTE123AP
NTE125
NTE128P
NTE2396
NTE2397
NTE2398
NTE5127A
NTE5304
NTE135A
NTE116 cross reference
transistor power
NTE2396
2 Amp rectifier diode
NTE5127A
nte159
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Untitled
Abstract: No abstract text available
Text: BUK7208-40B TrenchMOS standard level FET Rev. 01 — 12 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very
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BUK7208-40B
M3D300
BUK7208-40B
OT428
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BUK7208-40B
Abstract: No abstract text available
Text: BUK7208-40B TrenchMOS standard level FET Rev. 02 — 22 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK7208-40B
M3D300
OT428
BUK7208-40B
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BUK7208-40B
Abstract: No abstract text available
Text: BUK7208-40B N-channel TrenchMOS standard level FET Rev. 03 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7208-40B
BUK7208-40B
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Untitled
Abstract: No abstract text available
Text: BUK7208-40B N-channel TrenchMOS standard level FET Rev. 03 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7208-40B
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Untitled
Abstract: No abstract text available
Text: BUK7208-40B N-channel TrenchMOS standard level FET Rev. 03 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7208-40B
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STR 6757 OF equivalent
Abstract: Johnson motor 2 607 022 013 Barber-Colman CP AT-1163 ms-517
Text: Electric/Electronic Products Catalog Make the most of your energy General Information TAC TAC is a Schneider Electric Company with a long tradition of global leadership in building controls technology. We offer the most extensive line of controls and components available to today's market, including: valve bodies, valve assemblies, actuation devices and sensors, as well as interfaces, and automated systems that link these products and other building systems
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F-27382-2
STR 6757 OF equivalent
Johnson motor 2 607 022 013
Barber-Colman CP
AT-1163
ms-517
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Untitled
Abstract: No abstract text available
Text: Si2493/57/34/15/04 Global ISOmodem-EVB Evaluation Board Rev 5.0 for the Si2493/57/34/15/04 ISOmodem with UART and SPI Interfaces Description The global Si2493/57/34/15/04-EVB evaluation board Rev 5.0 provides the system designer an easy way of evaluating the Si2493/57/34/15/04 ISOmodem . The
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Si2493/57/34/15/04
Si2493/57/34/15/04-EVB
RS-232
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kc 5188
Abstract: 7805 Ka 2535 data sheet
Text: NTC SMD Thermistors With Nickel Barrier Termination NB 12 - NB 20 - NB 21 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They are widely used for temperature compensation but can also achieve temperature control of printed circuits.
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BA 3914 C
Abstract: BA 3949 NC20 005 418 NTC THERMISTORS K 164 nb 358 d ntc 1,0 0334 NF08 kc 5323 BA 8219
Text: NTC SMD Thermistors With Nickel Barrier Termination NB 12 - NB 20 - NB 21 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They are widely used for temperature compensation but can also achieve temperature control of printed circuits.
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SERVICE-MITTEILUNGEN
Abstract: funkschau VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN "service-mitteilungen" ASZ1015 stassfurt luxomat scans-048 stroboskop Servicemitteilungen
Text: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEH EN r a d i o - television AUSGABE: 2/73 DATUM: Febr. 1973 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt 1. Einsatz des Transistors P 217 A aus SU-Import im "Color 20” Der VK-Endtransistor T3 ASZ 1015 wird durch den Typ P 217 A er
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RCA9229D
Abstract: RCA9228D TA9229 RCA9228A RCA9228B RCA9228C RCA9229A RCA9229B RCA9229C T0204AE
Text: HARRIS SEMICON] SECTOR SbE ]> m M3D2E71 DÜMD^IS bbT H H A S RCA9228A, RCA9228B, RCA9228C, RCA9228D File Number 1448 RCA9229A, RCA9229B, RCA9229C, RCA9229D 50-A Complementary High-Current, Medium-Voltage N-P-N and P-N-P Silicon Darlington Power Transistors
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M302B71
RCA9228A,
RCA9228B,
RCA9228C,
RCA9228D
RCA9229A,
RCA9229B,
RCA9229C,
RCA9229D
04CH15
RCA9229D
TA9229
RCA9228A
RCA9228B
RCA9228C
RCA9229A
RCA9229B
RCA9229C
T0204AE
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RCA9228D
Abstract: RCA9228A
Text: File Number RCA9228A, RCA9228B, RCA9228C, RCA9228D RCA9229A, RCA9229B, RCA9229C, RCA9229D 1448 50-A Complementary High-Current, Medium-Voltage N-P-N and P-N-P Silicon Darlington Power Transistors TERMINAL DESIGNATIONS Features: • 3 0 0 W a t 2 5 ° C ca s e te m p e ra tu re
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RCA9228A,
RCA9228B,
RCA9228C,
RCA9228D
RCA9229A,
RCA9229B,
RCA9229C,
RCA9229D
O-204AE
RCA9228A
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MRF229
Abstract: MRF-229
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF229 The RF Line 1.5 W - 9 0 MHz RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N RF POWER TRANSISTORS . . . designed for 1 2.5 V o lt, mid-band large-signal am p lifie r app li cations in industrial and com m ercial F M equipm ent operating in the
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MRF229
MRF229
MRF-229
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2412 is N -C hannel M O S F ield E ffect T ra n s is to r d e in m illim e te rs sig n e d fo r h ig h speed s w itc h in g a p p lic a tio n s .
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2SK2412
2SK2412
100/i
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Transistor D 2494
Abstract: fj series capacitor panasonic J103 transistor Panasonic FJ Series Capacitor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F8 97 The RF Line N P N S ilic o n R F P o w e r T ra n s is to r Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating
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MRF897
Transistor D 2494
fj series capacitor panasonic
J103 transistor
Panasonic FJ Series Capacitor
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2412 is N -C h a n n e l MOS Field E ffect T ra n s is to r de sig n e d fo r high speed s w itc h in g a p p lic a tio n s . FEATURES •
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2SK2412
2SK2412
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MARKING GT SOT323
Abstract: z149 99 0437 12 05
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF577T1 NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range front end amplifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices such as pagers and hand-held phones.
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SC-70/SOT-323)
MRF577T1
SC-7Q/SOT-323)
Current068
IS22I
MRF577T1
MARKING GT SOT323
z149
99 0437 12 05
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Untitled
Abstract: No abstract text available
Text: H A R R HA-5102, HA-5104 HA-5112, HA-5114 IS S E M I C O N D U C T O R Low Noise, High Performance Operational Amplifiers April 1993 Features Description • Low • Wide Bandwidth 8MHz Compensated 60MHz (Uncompensated)
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HA-5102,
HA-5104
HA-5112,
HA-5114
60MHz
HA-5102/04/
60MHz
HA-5112/14)
50nV/Div.
1000VA/
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51125
Abstract: HA9P5112-9 has112 HA-5104 HA1-5114-2 HA6104 transistor 5104 db on 140 harris 5112 HA-5102 HAS104
Text: H A R R IS S E n iC O N D b l E SECTOR J> M 30SS71 S E M I C O N D U C T O R Low Noise, High Performance Operational Amplifiers April 1993 Features D escrip tio n Low NoIm . 4.3nV/VHz Low noise and high performance are key words describing HA-5102/04/
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HA-5102,
HA-5104
HA-5112,
HA-5114
60MHz
HA-5102/04/
HA-5112/14
51125
HA9P5112-9
has112
HA1-5114-2
HA6104
transistor 5104 db on 140
harris 5112
HA-5102
HAS104
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MC145034DW
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC145031 MC145032 MC145033 MC145034 MC145035 Advance Information Encoders and Decoders CMOS For remote control devices, the MC145031/34 function as encoders and the MC145032/35 function as decoders. The MC145033 functions as both an encoder
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MC145031/34
MC145032/35
MC145033
MC145031/2
MC145034/5
MC145034/35
MC145031-M
C145032
MC145034DW
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