Untitled
Abstract: No abstract text available
Text: Â B V I î » A e ro s p a c e /R u g g e d :zöd Printed Circuit Board C o nnectors Catalog 296 350 Issued 9 -9 7 4-Row Receptacle A s s e m b l ie s .060 T I H o u s in g M a t e r ia l f^ciyp t'eilylen:.-: .is o [3.31 s.illirlf; pet MIL M 245IS nr type
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245IS
G-LCP-30
1-800-f
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Untitled
Abstract: No abstract text available
Text: IS93C46 '. d ISSI i 1024-BIT SERIAL ELECTRICALLY ERASABLE PROM WITH 2V READ CAPABILITY FEATURES PRELIMINARY August 1990 PIN CONFIGURATIONS • State-of-the-Art Architecture — Non-volatile data storage — Single supply - 5V operation — Full TTL compatible inputs and outputs
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IS93C46
1024-BIT
733-ISSI
245-ISSI
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Untitled
Abstract: No abstract text available
Text: ISSI PRELIMINARY 2048-BIT SERIAL ELECTRICALLY ERASABLE PROM WITH 2V READ CAPABILITY FEATURES August 1990 PIN CONFIGURATIONS • State-of-the-Art Architecture — Non-volatile data storage — Single supply - 5V operation — Full TTL compatible inputs and outputs
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2048-BIT
733-ISSI
245-ISSI
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61C416
Abstract: IS61C416
Text: IS 61C416 ISSI v ili 4K X 16 HIGH SPEED CMOS CACHE RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • High speed access time - 2 5 ,3 5 ,45ns Max. • Designed for 80386 Cache system: 25ns - 33MHz 35ns - 25MHz 45ns - 20MHz The ISSI IS61C416 is a very high speed, low power, 4096
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61C416
33MHz
25MHz
20MHz
IS61C416
33MHz.
IS61C416-25L
61C416
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733-ISSI
Abstract: No abstract text available
Text: 16KX1 HIGH SPEED CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • High speed access time 15,20,25ns Max. • Low active power- 200mW (Typical) • Low standby power-55mW (Typical) TTL standby -10(iW (Typical) CMOS standby (L-version) • Fully static operation-no clock or refresh required
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16KX1
200mW
power-55mW
IS61C67
61C67
IS61C67-15N
IS61C67-L15N
IS61C67-20N
IS61C67-L20N
IS61C67-25N
733-ISSI
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61C30
Abstract: 82385
Text: IS 61C308 2 X 2K X 16 HIGH SPEED CMOS CACHE RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • High speed acces time - 2 5 ,3 5 ,45ns Max. • Designed for 80386 Cache system: 25ns - 33MHz 35ns - 25MHz 45ns - 20MHz The ISSI IS61C308 is a high speed, low power, two banks of
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61C308
33MHz
25MHz
20MHz
9/11/15ns
82C307/82C327
IS61C308
2048-word
16-bit
61C30
82385
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Untitled
Abstract: No abstract text available
Text: ISSI IS 61C68 4K X 4 HIGH SPEED CMOS STATIC RAM AUGUST 1990 FEATURES DESCRIPTION • • • The ISSI IS61C68 is a high speed, low power, 4096- word by 4- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technology. This highly
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61C68
200mW
power-55mW
IS61C68
IS61C68-15N
IS61C68-L15N
IS61C68-20N
IS61C68-L20N
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IS61C67-15N
Abstract: 733-ISSI
Text: HH -gli IS 61C67 ISSI 1 6 KX1 HIGH SPEED CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • High speed access time 15,20,25ns Max. • Low active power- 200mW (Typical) • Low standby power-55mW (Typical) TTL standby -10|iW (Typical) CMOS standby (L-version)
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61C67
200mW
power-55mW
IS61C67
IS61C67-15N
IS61C67-L15N
IS61C67-20N
IS61C67-L20N
733-ISSI
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62c1024
Abstract: IS62C1024 CE121
Text: IS 62C1024 ISSI 'm s*' ? 128K X 8 LOW POWER CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • The ISSI IS62C1024 is a high speed, low power, 131,072- word by 8- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technol
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62C1024
time-70
100ns
power-10
IS62C1024
IS62C1024-70W
IS62C1024-L70W
IS62C1024-85W
IS62C1024-L85W
62c1024
CE121
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OF sk 733
Abstract: 93C66 93c66 issi f 93c66 txal IS61C416 chip 8-pin 93C66 IS93C66
Text: ISSI IS93C66 4096-BIT SERIAL ELECTRICALLY ERASABLE PROM WITH 2V READ CAPABILITY FEATURES PRELIMINARY August 1990 PIN CONFIGURATIONS • State-of-the-Art Architecture — Non-volatile data storage — Single supply - 5V operation — Full TTL compatible inputs and outputs
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IS93C66
4096-BIT
733-ISSI
245-ISSI
OF sk 733
93C66
93c66 issi
f 93c66
txal
IS61C416
chip 8-pin 93C66
IS93C66
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61c1024
Abstract: IS61C1024
Text: IS 61C1024 128K X 8 HIGH SPEED CMOS STATIC RAM PRELIMINARY SEPTEMBER 1990 DESCRIPTION FEATURES The ISSI IS 6 lC l0 2 4 is a high speed, low power, 131,072- word by 8- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technol
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61C1024
power-400mW
power-50
50jiW
IS61C1024-S35W
IS61C1024-L35W
IS61C
1024-S45
IS61C1024-S55W
61c1024
IS61C1024
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82C481
Abstract: 82C381 opti 82C481 OPTI 82C281 FACT521A opti 82c381
Text: IS 61C81 j ISSI •v!! ■ :/iÀ 8K X 8 - BIT CACHE TAG CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • • • • The ISSI IS61C81 is a very high speed cache address comparator sub-system consisting of a 65,536-bit static RAM organized as 8K x 8. Cycle Time and Compare Access Time
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61C81
500mW
82C281
82C381
82C481
FACT521A
IS61C81
IS61C81-20N
IS61C81-20J
IS61C81-L20N
opti 82C481
OPTI 82C281
opti 82c381
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Untitled
Abstract: No abstract text available
Text: ISSI •T 3T 51 *• > 1 IS 61C816 2 x 4K x 16, 8K X 16 HIGH SPEED CMOS CACHE RAM OCTOBER1990 DESCRIPTION FEATURES • PRELIMINARY The ISSI IS61C816 is fabricated by the double layer polysili con, double layer metal CMOS technolgy. It is specifically designed to provide direct interface to the 80386 32-bit CPU
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61C816
33MHz
25MHz
20MHz
OCTOBER1990
IS61C816
32-bit
IS61C816-25L
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93C46 CMOS Serial Electrically Erasable PROM
Abstract: 93c46 LN 93c46 st IS93C46 chip 8-pin 93C46 ISSI 93C46
Text: IS93C46 ISSI * 1024-BIT SERIAL ELECTRICALLY ERASABLE PROM WITH 2V READ CAPABILITY PRELIMINARY August 1990 PIN CONFIGURATIONS FEATURES • State-of-the-Art Architecture — Non-volatile data storage — Single supply - 5V operation — Full TTL compatible inputs and outputs
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IS93C46
1024-BIT
733-ISSI
245-ISSI
93C46 CMOS Serial Electrically Erasable PROM
93c46 LN
93c46 st
IS93C46
chip 8-pin 93C46
ISSI 93C46
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Untitled
Abstract: No abstract text available
Text: ISS 3 4K X 4-BIT CACHE-TAG CMOS STATIC RAM OCTOBER 1990 FEATURES DESCRIPTION • Very High Speed -1 2 ,1 5 , 20ns Max. • Fast output enable (tOE) for cache applications • CMOS Low Power Operation The ISSI IS61C180 is a high-speed, low power 4096 words by 4 bit static RAM. It is fabricated using ISSI's high
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IS61C180
61C180
IS61C180-12N
IS61C180-15N
IS61C180-20N
733-ISSI
245-ISSI
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PDF
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IS61C66-20N
Abstract: No abstract text available
Text: ISSI IS 61C66 16KX4 HIGH SPEED CMOS STATIC RAM AUGUST 1990 FEATURES DESCRIPTION • • • The ISSI IS61C66 is a very high speed, low power, 16384 words by 4 bit static RAM. The device is fabricated using ISSI's high performance CMOS double metal technology.
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61C66
16KX4
400mW
25n-W
IS61C66
IS61C66-15N
IS61C66-L15N
IS61C66-20N
IS61C66-L20N
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PDF
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61c64
Abstract: IS61C64-S20W IS61C64-S20N IS61C64 IS61C64-S20P
Text: ISSI IS61C64_ U 8K X 8 HIGH SPEED CMOS STATIC RAM FEATURES • • • • • • • • • • Very High Speed - 20, 25, 30 ns Max. Fast output enable (tOE) for cache applications Automatic power-down when chip is deselected CMOS Low Power Operation
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400mW
IS61C64
IS61C64-L25N
IS61C64-L25P
IS61C64-L25W
IS61C64-S30N
IS61C64-S30P
IS61C64-S30W
IS61C64-L30N
IS61C64-L30P
61c64
IS61C64-S20W
IS61C64-S20N
IS61C64-S20P
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PDF
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61c88
Abstract: No abstract text available
Text: ISSI IS 61C88 16K X 4 HIGH SPEED CMOS STATIC RAM AUGUST 1990 FEATURES DESCRIPTION • • • • The ISSI IS61C88 is a very high speed, low power, 16384 words by 4 bit static RAM. The device is fabricated using ISSI's high performance CMOS double metal technology.
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61C88_
400mW
IS61C88
IS61C88-L20N
IS61C88-L20J
IS61C88-25N
IS61C88-25J
IS61C88-L25N
IS61C88-L25J
IS61C88-30N
61c88
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62C256
Abstract: No abstract text available
Text: IS 62C256 ISSI - JïOv* 32K X 8 LOW POWER CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • Fast Access Time: 8 0 ,1 0 0 ,120ns max. • Low Power Dissipation Standby (CMOS): 10nW(typ.) Operating: 250mW (max.) The ISSI IS62C256 is a high speed, low power, 32,768-word
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62C256
120ns
250mW
IS62C256
768-word
IS62C256-80W
IS62C256-100W
IS62C256-120W
62C256
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PDF
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Untitled
Abstract: No abstract text available
Text: IS 62C1024 128K X 8 LOW POWER CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION Low active power- 75mW Typical High speed access tim e-70,8 5 ,100ns (Max.) Low standby power-1 O^iW (Typical) CMOS standby (L-version) Output enable and two chip enable inputs for ease
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62C1024
100ns
IS62C1024
IS62C1024-70W
IS62C1024-L70
IS62C1024-85W
IS62C1024-L85W
IS62C1024-100W
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PDF
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Untitled
Abstract: No abstract text available
Text: ISSI IS93C66 4096-BIT SERIAL ELECTRICALLY ERASABLE PROM WITH 2V READ CAPABILITY FEATURES PRELIMINARY August 1990 PIN CONFIGURATIONS • State-of-the-Art Architecture — Non-volatile data storage — Single supply - 5V operation — Full TTL compatible inputs and outputs
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OCR Scan
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IS93C66
4096-BIT
733-ISSI
245-ISSI
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PDF
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Untitled
Abstract: No abstract text available
Text: ISSI IS93C46-3 1024-BIT SERIAL 3V TO 5V ELECTRICALLY ERASABLE PROM WITH 2V READ CAPABILITY FEATURES PRELIMINARY August 1990 PIN CONFIGURATIONS • State-of-the-Art Architecture — Non-volatile data storage — 3V to 5V operation — Full TTL compatible inputs and outputs
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OCR Scan
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IS93C46-3
1024-BIT
733-ISSI
245-ISSI
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PDF
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Untitled
Abstract: No abstract text available
Text: ISSI IS 61C88 16K X 4 HIGH SPEED CMOS STATIC RAM AUGUST 1990 FEATURES DESCRIPTION • Very High Speed - 15, 20, 25, 30 ns Max. • Fast output enable (tDOE) for cache applications • • Automatic power-down when chip is deselected CMOS Low Power Operation
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61C88
IS61C88
IS61C88has
isIS61C88-L30J
733-ISSI
245-ISSI
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PDF
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IS61C64-25N
Abstract: IS61C64-20N 61c16 IS61C64-25J IS61C64-20 IS61C64
Text: ISST 2K X 8 HIGH SPEED CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • The ISSI IS61C16 is a very high speed, low power, 2048 words by 8 bit static RAM. It is fabricated using ISSI's high performance CMOS double metal technology. This highly
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OCR Scan
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IS61C16
61C16
IS61C64-20N
IS61C64-20J
IS61C64-L20N
IS61C64-L20J
IS61C64-25N
IS61C64-25J
IS61C64-L25N
61c16
IS61C64-20
IS61C64
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