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    2450-10 TOKO Search Results

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    2450-10 toko

    Abstract: TDF2A-2450T-10 2450-10 TOKO filter
    Text: SPECIFICATION OF DIELECTRIC TOKO P/No: 1. OUTLINE FILTER TDF2A-2450T-10 DIMENSION Marking:2450-10 TOKO A=5.1 B=2.5 T=2.25 Tolerance Unit :±0.3 :mm 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo Passband Width Input Output Impedance : : : 2450MHz Fo±50MHz


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    PDF TDF2A-2450T-10 2450MHz 50MHz 50ohm 20dB1 Fo-280MHz 16dB1 280MHz TDF2A-2450TFilter 2450-10 toko TDF2A-2450T-10 2450-10 TOKO filter

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION OF DIELECTRIC TOKO P/No: 1. OUTLINE FILTER TDF2A-2450T-10 DIMENSION Marking:2450-10 TOKO A=5.1 B=2.5 T=2.25 Tolerance Unit :±0.3 :mm 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo Passband Width Input Output Impedance : : : 2450MHz Fo±50MHz


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    PDF TDF2A-2450T-10 2450MHz 50MHz 50ohm 20dB1 Fo-280MHz 16dB1 280MHz

    TDF2A-2450T-10A

    Abstract: 2450-10 toko 2450-10
    Text: RoHS compliant SPECIFICATION OF DIELECTRIC FILTER Preliminary TOKO P/No: TDF2A-2450T-10A 1. OUTLINE DIMENSION Marking:2450-10 TOKO A=5.1 B=2.5 T=2.25 Tolerance Unit :mm :±0.3 2. ELECTRICAL CHARACTERISTICS Center Frequency (Fo) Passband Width Input Output Impedance


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    PDF TDF2A-2450T-10A 2450MHz 50MHz 50ohm Fo-280MHz 280MHz TDF2A-2450T-10A 2450-10 toko 2450-10

    2450 MHz low noise amplifier schematic

    Abstract: C06CF Avantek mixer HP83620A Avantek mixer TFX Avantek tfx Rf Front-End TFX-722 GRM36X5R104K10 2.4GHz booster
    Text: 3.3V Integrated RF Front-End for 2.4GHz ISM ITT2304GF PRELIMINARY FEATURES • • • • • • • • • Build a Bluetooth or HomeRF radio by connecting directly to popular single chip transceivers like the National LMX3162. 3.3V operation Single positive supply


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    PDF ITT2304GF LMX3162. ITT2304GF HP83620A ACM-040-2222 902045x7 TFX-722 2450 MHz low noise amplifier schematic C06CF Avantek mixer Avantek mixer TFX Avantek tfx Rf Front-End TFX-722 GRM36X5R104K10 2.4GHz booster

    RF Power Amplifier IC for 2.4 GHz ISM

    Abstract: No abstract text available
    Text: RF Power Amplifier IC for 2.4 GHz ISM ITT2303GJ FEATURES • • • • • • • • • • • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency as high as 55% IP3 = +43 dBm Output Power 26.5 dBm @ 3.3V


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    PDF ITT2303GJ ITT2303GJ C11AH101K5TXL) C11AH2R0BTXL) C11AH1R2B5TXL) P300ECT-ND) TKS235CT-ND) 1008CS270XKBB) RF Power Amplifier IC for 2.4 GHz ISM

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET ° 2.45 GHz Application Circuit at 25 C Vds=8V, Idq=250mA Microstrip Segment Specifications Ref. desig. Value Part Number /Style Ref. desig. Value C d2,5 5.6 pF ROHM MCH18 series Z1 50 ohms, 7.3 deg. @ 2450 MHz


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    PDF SHF-0289 250mA) MCH18 LL1608- FH15NT

    pin configuration of ic 1496

    Abstract: MAAPSS0093 the pin function of ic 7413 2450 MHz low noise amplifier schematic 96214 99108 M513 MA02303GJ MAAPSS0093SMB MAAPSS0093TR-3000
    Text: RoHS Compliant RF Power Amplifier IC For 2.5 GHz ISM MAAPSS0093 V1 Features • • • • • • • • • • • • Functional Schematic Perfect for 2.4 GHz Cordless DECT WDECT Single Positive Voltage Operation Power Added Efficiency As High As 55%


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    PDF MAAPSS0093 MA02303GJ MAAPSS0093 pin configuration of ic 1496 the pin function of ic 7413 2450 MHz low noise amplifier schematic 96214 99108 M513 MA02303GJ MAAPSS0093SMB MAAPSS0093TR-3000

    RF Power Amplifier IC for 2.4 GHz ISM

    Abstract: TKS235CT-ND
    Text: RF Power Amplifier IC for 2.4 GHz ISM ITT2303GJ PRELIMINARY FEATURES • • • • • • • • • • • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency as high as 55% IP3 = +43 dBm


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    PDF ITT2303GJ ITT2303GJ C11AH101K5TXL) C11AH2R0BTXL) C11AH1R2B5TXL) P300ECT-ND) TKS235CT-ND) 1008CS270XKBB) RF Power Amplifier IC for 2.4 GHz ISM TKS235CT-ND

    14 pin ic 4027

    Abstract: 96214 99108 MA02303GJ 03168 IC 7449 09870
    Text: MA02303GJ RF Power Amplifier IC For 2.4 GHz ISM FEATURES •= •= •= •= •= •= •= •= •= •= •= Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency as high as 55% IP3 = +43 dBm Output Power 26.5 dBm @ 3.3V


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    PDF MA02303GJ 14 pin ic 4027 96214 99108 MA02303GJ 03168 IC 7449 09870

    Untitled

    Abstract: No abstract text available
    Text: RF Power Amplifier IC For 2.5 GHz ISM MA02303GJ V6 Features • • • • • • • • • • • Functional Schematic Perfect for 2.4 GHz Cordless DECT WDECT Single Positive Supply Power Added Efficiency As High As 55 Percent IP3 = +43 dBm Output Power 26.5 dBm @ 3.3 V


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    PDF MA02303GJ

    ITT2303GJ

    Abstract: 99108 IC 7404 not gate
    Text: RF Power Amplifier IC for 2.4 GHz ISM ITT2303GJ FEATURES • • • • • • • • • • • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency as high as 55% IP3 = +43 dBm Output Power 26.5 dBm @ 3.3V


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    PDF ITT2303GJ ITT23 ITT2303GJ 99108 IC 7404 not gate

    1485C

    Abstract: SE 194 Sirenza amplifier SOT-89
    Text: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


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    PDF SXA-389B SXA-389B MPO-100136 016REF 118REF 041REF 015TYP EDS-102915 1485C SE 194 Sirenza amplifier SOT-89

    MCH18

    Abstract: SXA-389B xa3b EL115
    Text: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular


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    PDF SXA-389B SXA-389B MPO-100136 016REF 118REF 041REF 015TYP EDS-102915 MCH18 xa3b EL115

    Untitled

    Abstract: No abstract text available
    Text: MA02303GJ RF Power Amplifier IC for 2.4 GHz ISM Features V2 MA02303GJ Functional Schematic • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS • Single Positive Supply • Power Added Efficiency As High As 55 Percent • IP3 = +43 dBm


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    PDF MA02303GJ MA02303GJ

    99108

    Abstract: MA02303GJ MA02303GJ-R13 MA02303GJ-R7 MA02303GJ-SMB IC 7449 specifications of IC 7404 14 pin ic 4027 specifications of IC 7404 point to point
    Text: RF Power Amplifier IC For 2.5 GHz ISM MA02303GJ V7 Features • • • • • • • • • • • Functional Schematic Perfect for 2.4 GHz Cordless DECT WDECT Single Positive Supply Power Added Efficiency As High As 55 Percent IP3 = +43 dBm Output Power 26.5 dBm @ 3.3 V


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    PDF MA02303GJ MA02303GJ 99108 MA02303GJ-R13 MA02303GJ-R7 MA02303GJ-SMB IC 7449 specifications of IC 7404 14 pin ic 4027 specifications of IC 7404 point to point

    Untitled

    Abstract: No abstract text available
    Text: MA02303GJ RF Power Amplifier IC for 2.4 GHz ISM Features • • • • • • • • • • • V5.1 MA02303GJ Functional Schematic Perfect for 2.4 GHz Cordless DECT WDECT Single Positive Supply Power Added Efficiency As High As 55 Percent IP3 = +43 dBm


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    PDF MA02303GJ MA02303GJ

    xa3b

    Abstract: No abstract text available
    Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent


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    PDF SXA-389B SXA-389BZ MPO-100136 016REF 118REF 041REF 015TYP SXA-389B EDS-102915 xa3b

    a3bz

    Abstract: marking A3BZ 267M3502104 a3bz MARKING AN-075 MCH18 SXA-389B SXA-389BZ Sirenza amplifier SOT-89 MMIC SXA 389Bz marking
    Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent


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    PDF SXA-389B SXA-389BZ SXA-389B AN-075 EDS-102915 a3bz marking A3BZ 267M3502104 a3bz MARKING AN-075 MCH18 SXA-389BZ Sirenza amplifier SOT-89 MMIC SXA 389Bz marking

    specifications of IC 7404 point to point

    Abstract: FR4 dielectric constant at 2.4 Ghz
    Text: MA02303GJ RF Power Amplifier IC for 2.4 GHz ISM Features • • • • • • • • • • • V1 MA02303GJ Functional Schematic Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency As High As 55 Percent


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    PDF MA02303GJ MA02303GJ MO-187 specifications of IC 7404 point to point FR4 dielectric constant at 2.4 Ghz

    FR4 dielectric constant at 2.4 Ghz

    Abstract: C11AH1R 14 pin ic 7404 not gate fr-4 dielectric constant 4.4 99108 specifications of IC 7404 point to point 96214 MA02303GJ MA02303GJ-R13 MA02303GJ-R7
    Text: MA02303GJ RF Power Amplifier IC for 2.4 GHz ISM Features Functional Schematic • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS • Single Positive Supply • Power Added Efficiency As High As 55 Percent • IP3 = +43 dBm • Output Power 26.5 dBm @ 3.3 V


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    PDF MA02303GJ MA02303GJ MO-187 FR4 dielectric constant at 2.4 Ghz C11AH1R 14 pin ic 7404 not gate fr-4 dielectric constant 4.4 99108 specifications of IC 7404 point to point 96214 MA02303GJ-R13 MA02303GJ-R7

    marking xt2 mmic

    Abstract: EDS-101157 MCH18 MCR03 SXT-289 267M3502104 Sirenza amplifier SOT-89
    Text: Product Description SXT-289 Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth


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    PDF SXT-289 SXT-289 016REF 118REF 041REF EDS-101157 marking xt2 mmic MCH18 MCR03 267M3502104 Sirenza amplifier SOT-89

    Untitled

    Abstract: No abstract text available
    Text: 0.5 W, 2.4 GHz Power Amplifier AM52-0024 V 1.2 Features n n n n n Functional Schematic Ideal for 802.11b ISM Applications Single Positive Supply Output Power 27.5 dBm 57% Typical Power Added Efficiency Downset MSOP-8 Package PIN 8 PIN 1 Description M/A-COM’s AM52-0024 is a 0.5 W, 2.4 GHz GaAs


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    PDF AM52-0024 AM52-0024 AM520024

    GETEK

    Abstract: ITT2301AF C11AH100 Dielectric Labs
    Text: 3.6V 0.5W RF Power Amplifier IC for 2.4 GHz ISM ITT2301AF Features Applications § § § § • • • • • • • 2.4 GHz ISM Cordless Phones Cordless PBX Radio/Wireless Local Loop RLL/WLL V DD1 VDD2 N/C GND GND GND GND GND RFIN/VGG1 PRELIMINARY Single Positive Supply


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    PDF ITT2301AF GETEK ITT2301AF C11AH100 Dielectric Labs

    2450-10 toko

    Abstract: No abstract text available
    Text: SPECIFICATION OF DIELECTRIC TOKO P/No: 1. OUTLINE FILTER TDF2A-2450T-10A DIMENSION Marking 5.7 Marking:2450-10 TOKO A=5.1 B=2.5 T=2.25 Tolerance Unit :±0.3 :inm 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo 2450MHz Passband Width Fo±50MHz Input Output Impedance


    OCR Scan
    PDF TDF2A-2450T-10A 2450MHz 50MHz 50ohm 80MHz 280MHz 00MHz 2450-10 toko