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    2404 TRANSISTOR Search Results

    2404 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2404 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401,RN2402,RN2403 RN2404,RN2405,RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design


    Original     		RN2401 RN2406 RN2402 RN2403 RN2404 RN2405 RN1401 RN2401 PDF

    2404 Transistor

    Abstract: RN2401 RN2402 RN1401 RN2403 RN2404 RN2405 RN2406 transistor 009 transistor 2404
    Text: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401, RN2402, RN2403, RN2404, RN2405, RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplified circuit design


    Original     		RN2401 RN2406 RN2401, RN2402, RN2403, RN2404, RN2405, RN1401 RN2401 2404 Transistor RN2402 RN2403 RN2404 RN2405 RN2406 transistor 009 transistor 2404 PDF

    RN1401

    Abstract: RN2401 RN2402 RN2403 RN2404 RN2405 RN2406
    Text: RN2401,RN2402,RN2403,RN2404,RN2405,RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401,RN2402,RN2403 RN2404,RN2405,RN2406 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors


    Original     		RN2401 RN2402 RN2403 RN2404 RN2405 RN2406 RN2403 RN1401 RN2406 PDF

    RN1401

    Abstract: RN2401 RN2402 RN2403 RN2404 RN2405 RN2406
    Text: RN2401,RN2402,RN2403,RN2404,RN2405,RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401,RN2402,RN2403 RN2404,RN2405,RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors


    Original     		RN2401 RN2402 RN2403 RN2404 RN2405 RN2406 RN2403 RN1401 RN2406 PDF

    RN1401

    Abstract: RN2401 RN2402 RN2403 RN2404 RN2405 RN2406 2404
    Text: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401,RN2402,RN2403 RN2404,RN2405,RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design


    Original     		RN2401 RN2406 RN2402 RN2403 RN2404 RN2405 RN1401 RN2401 RN2403 RN2406 2404 PDF

    RN2402

    Abstract: RN1401 RN2401 RN2403 RN2404 RN2405 RN2406
    Text: RN2401,RN2402,RN2403,RN2404,RN2405,RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401,RN2402,RN2403 RN2404,RN2405,RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors


    Original     		RN2401 RN2402 RN2403 RN2404 RN2405 RN2406 RN2403 RN1401 RN2406 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401, RN2402, RN2403, RN2404, RN2405, RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z With built-in bias resistors z Simplified circuit design


    Original     		RN2401 RN2406 RN2401, RN2402, RN2403, RN2404, RN2405, RN1401 PDF

    RN2401

    Abstract: No abstract text available
    Text: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401, RN2402, RN2403, RN2404, RN2405, RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplified circuit design


    Original     		RN2401 RN2406 RN2401, RN2402, RN2403, RN2404, RN2405, RN1401 RN2403 PDF

    RN2404

    Abstract: RN1401 RN2401 RN2402 RN2403 RN2405 RN2406
    Text: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401, RN2402, RN2403, RN2404, RN2405, RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplified circuit design


    Original     		RN2401 RN2406 RN2401, RN2402, RN2403, RN2404, RN2405, RN1401 RN2401 RN2404 RN2402 RN2403 RN2405 RN2406 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2401, RN2402, RN2403 RN2404, RN2405, RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors


    Original     		RN2401 RN2406 RN2401, RN2402, RN2403 RN2404, RN2405, RN1401 RN2401 PDF

    P55C

    Abstract: SPX1580 SPX1581 SPX1582 SPX1583 2404
    Text: SPX1583 1.5A Ultra Low Dropout Voltage Regulator Fast Response, Adjustable & Fixed FEATURES APPLICATIONS • Low Dropout Voltage 500mV at 1.5A Full Load Current • Adjustable Output Down to 1.2V from ATX Power Supply • Fixed Output Voltages of 3.3V, 2.8V, 2.5V, and 1.5V


    Original     		SPX1583 500mV O-220 O-263 SPX1583 SPX1583T5-3-3/TR SPX1583T5-L-3-3/TR P55C SPX1580 SPX1581 SPX1582 2404 PDF

    pt100 datasheet

    Abstract: transistor wachendorff 2AC50
    Text: Temperaturanzeigen Industrie - Temperaturanzeige PAX T nicht möglich, wenn die Bedingung nicht erfüllt ist und der Ausgang normalerweise schaltet. Sobald die Bedingung das erste Mal wieder erfüllt ist, wirkt eine Rückstellung. StandbyJa/nein. Bei Ja wird der Alarm erst aktiv, wenn der


    Original     		103Benutzereingang 11N/CNicht tPAXT0000 485PAXCDC10 232PAXCDC20 PAXCDL10 WechslerPAXCDS10 erPAXCDS20 NPNPAXCDS30 PNPPAXCDS40 pt100 datasheet transistor wachendorff 2AC50 PDF

    NJM2259

    Abstract: Dual RF transistor NJM2204B NJM2225A NJM2270 NJM2610 NJM3201 NJM387 NJM2104
    Text: DISCONTINUE PRODUCTS • DISCONTINUE PRODUCTS Type No. NJM387 NJM 2404 NJM 2610 NJM2204B FUNCTION Dual Low Noise OP-Amp 3/4 W ired Remote Controller Bi-Directional M otor Driver Log Amplifier NJM 22I9 NJM2225A NJM2259 NJM 2270 NJM3201 NJM 2104 NJM 2620 NJM 2250


    OCR Scan     		NJM387 NJM2404 NJM2610 NJM2204B NJM2219 NJM2225A NJM2259 NJM2270 NJM3201 NJM2104 Dual RF transistor PDF

    T17 TRANSISTOR

    Abstract: sanyo 1042 LA7301 LA7301M transistor t20 DIP920 transistor t8 6CM6
    Text: L A 7 3 0 1, 7 3 0 1 M No.2404 SAIÊYO F Monolithic Linear IC VHS VTR P l a y b a c k He a d Am p , Re c/ o r d"Vi n g Am p I Ji' v Functions • 4-channel playback head amp . 2-channel recording amp ♦ PB; 2 head select switches, k mode select switch^/ . KEC: 4 head select switches, 2 mode select switches


    OCR Scan     		LA730 7301M 6CM61E) vii555Vpp 630kK& 2J40H- T17 TRANSISTOR sanyo 1042 LA7301 LA7301M transistor t20 DIP920 transistor t8 6CM6 PDF

    BDXS3

    Abstract: BDXS Hammer D02017
    Text: T -3 3 -2 ? Power Transistors. BDX53, BDX53A, BDX53B, BDX53C HARRIS SEMICOND SECTOR File Number M302271 G02017D H « H A S 27E D 8-Ampere N-P-N Darlington Power Transistors 45-60-80-100 Volts, 60 W atts Gain of 750 at 3 A TERMINAL DESIGNATIONS Features: • Operates from IC without predrlver


    OCR Scan     		BDX53, BDX53A, BDX53B, BDX53C M302271 G02017D O-220AB 92CS-39969 BDXS3 BDXS Hammer D02017 PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICON» SECTOR SbE I> WM M3DEE71 GOMOfl2i4 7T1 H H A S D45C Series File Number 2352 7 =-3 3 - / 7 Silicon P-N-P Transistors Complementary to the D44C Series General-Purpose Types for Medium -Power Switching and Am plifier Applications Features: • Very low collector saturation voltago 1-0.5V typ. @ -3.0A I q ]


    OCR Scan     		M3DEE71 D45C-series -20mA, 300ms PDF

    nte 2343

    Abstract: No abstract text available
    Text: SILICON DARLINGTON TRANSISTORS IN ORDER OF NTE PART NUMBER NPN PNP Circuit Outline Description Letter Maximum Breakdown Voltage NTE Type Number Case Style Diag. Number Maximum Continuous Collector Current (Amps) Collector to Base (Volts) Collector to Emitter


    OCR Scan     		OT-23 OT-89 nte 2343 PDF

    motorola rf Power Transistor mrf317

    Abstract: hfc4
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output amplifier stages in 30 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W


    OCR Scan     		Carrier/120 MBF317 motorola rf Power Transistor mrf317 hfc4 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistors MRF10500 MRF10501 . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • Guaranteed Performance @ 1090 MHz


    OCR Scan     		MRF10500 MRF10501 MRF10501 b3b72S5 0CH2405 PDF

    2sd 4515

    Abstract: transistors 2sd 2500 2SB1619 B1582 2sd darlington 2sc 043 2SA audio POWER TRANSISTORS 2sa 3704 25C1317 2SC4714
    Text: Transistors Selébtion Guide by Applications and Functions • Silicon Small Signal Transistors • G e n e ra l-u s e Low Frequency Am plifiers and Others Package (No.) Application S S Mini Functions Type (D1) i 2SB 14 62 [ 2SD2216 S Mini Type (D5) T Mini


    OCR Scan     		2SD2216 O-92NL O-92L 2SB1218A 2SA1309A 2SD601A 2SA719 25C1317 2S8643 2SD63B 2sd 4515 transistors 2sd 2500 2SB1619 B1582 2sd darlington 2sc 043 2SA audio POWER TRANSISTORS 2sa 3704 2SC4714 PDF

    Untitled

    Abstract: No abstract text available
    Text: D45C Series File N um ber 2352 Silicon P-N-P Transistors Complementary to the D44C Series G en eral-P u rp o se T yp es fo r M e d iu m -P o w e r S w itchin g and A m p lifie r A p p licatio n s F e atu re s: • Very lo w c o lle c to r s a tu ra tio n voltage


    OCR Scan     		PDF

    MRF581

    Abstract: MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF581 MRF581A The RF Line NPN Silicon High-Frequency Transistors . . . designed for high current low power amplifiers up to 1.0 GHz. • lc = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON Low Noise 2.0 dB @ 500 MHz


    OCR Scan     		MRF581 MRF581A VK-200, 56-590-65/3B MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead PDF

    Untitled

    Abstract: No abstract text available
    Text: Sym bol P B F 2 5 9 .S U n it C o lle c to r-E m itte r V o itage R ating VC EO 300 Vdc C o lle c to r-B a s e V o ltage VCBO 300 Vdc E m itte r-B a s e V o ltage VEBO 50 Vdc C o lle c to r C u rre n t - C o n tin u o u s >C 500 m Adc Total Device D is s ip a tio n c? T /\ = ZB^C


    OCR Scan     		PBF259S PDF

    ufnf230

    Abstract: UFNF93H UFNF9 40 gd 4n diode UFN232
    Text: POWER MOSFET TRANSISTORS HfflSI? 200 Volt, 0.4 Ohm N-Channel UFNF232 UFNF233 FEATURES • Fast S w itching • Low Drive Current DESCRIPTION The U nitrode power M O SFET d esign utilizes the m ost advanced technology available. T h is efficie n t design a ch ieves a very low R dsioih and a high tran scon d u ctan ce.


    OCR Scan     		UFNF232 UFNF233 UFN230 UFN231 UFN232 UFN233 ufnf230 UFNF93H UFNF9 40 gd 4n diode UFN232 PDF