MMFTN123
Abstract: No abstract text available
Text: MMFTN123 MMFTN123 N-Channel Logic Level Enhancement Mode Field Effect Transistor N-Kanal Logikpegel Feldeffekt-Transistor – Anreicherungstyp N N Version 2011-01-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1
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MMFTN123
OT-23
O-236)
UL94V-0
MMFTN123
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BSR18A
Abstract: BSR17A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR18A PNP switching transistor Product specification Supersedes data of 1997 May 28 2004 Mar 24 Philips Semiconductors Product specification PNP switching transistor BSR18A FEATURES PINNING • Low current max. 100 mA
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M3D088
BSR18A
BSR17A.
MAM256
SCA76
R75/03/pp8
BSR18A
BSR17A
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PDF
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BSR17A
Abstract: BSR18A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR17A NPN switching transistor Product specification Supersedes data of 1997 Jun 02 2004 Mar 24 Philips Semiconductors Product specification NPN switching transistor BSR17A FEATURES PINNING • Low current max. 100 mA
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Original
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M3D088
BSR17A
BSR18A.
MAM255
SCA76
R75/03/pp8
BSR17A
BSR18A
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PDF
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MMFTN138
Abstract: DSS50V
Text: MMFTN138 MMFTN138 N-Channel Logic Level Enhancement Mode Field Effect Transistor N-Kanal Logikpegel Feldeffekt-Transistor - Anreicherungstyp N N Version 2011-01-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1
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MMFTN138
OT-23
O-236)
UL94V-0
MMFTN138
DSS50V
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PDF
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qm marking code sot-23
Abstract: 8725 maxim transistor 1039 maxim 8725 JESD22-A102 JAN2N3700 JESD22-A101 JESD22-A103 JESD22-A113 sot-23 npn marking code cr
Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 24 October, 2003. INCH-POUND MIL-PRF-19500/694A 24 August 2003 SUPERSEDING MIL-PRF-19500/694 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN,
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MIL-PRF-19500/694A
MIL-PRF-19500/694
2N3700UE1,
MIL-PRF-19500.
OT-23
qm marking code sot-23
8725 maxim
transistor 1039
maxim 8725
JESD22-A102
JAN2N3700
JESD22-A101
JESD22-A103
JESD22-A113
sot-23 npn marking code cr
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PDF
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free transistor equivalent book
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4160T 60 V; 1 A NPN low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 60 V; 1 A NPN low VCEsat (BISS) transistor PBSS4160T FEATURES QUICK REFERENCE DATA
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Original
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M3D088
PBSS4160T
SCA75
613514/01/pp12
free transistor equivalent book
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PDF
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MARKING ZT SOT23 TRANSISTOR
Abstract: PBSS4140T PBSS5140T free transistor and ic equivalent data PBSS4140
Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product specification Supersedes data of 2005 Feb 14 2005 Feb 24 Philips Semiconductors Product specification 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T QUICK REFERENCE DATA
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PBSS4140T
SCA76
R75/05/pp9
MARKING ZT SOT23 TRANSISTOR
PBSS4140T
PBSS5140T
free transistor and ic equivalent data
PBSS4140
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PDF
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PBSS4160T
Abstract: BCP55 BCX55 PBSS5160T
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 24 2004 May 12 Philips Semiconductors Product specification 60 V, 1 A NPN low VCEsat (BISS) transistor
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M3D088
PBSS4160T
SCA76
R75/02/pp10
PBSS4160T
BCP55
BCX55
PBSS5160T
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PDF
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IF3601
Abstract: 2N6449 2N6450 IF9030 interfet B-28 IF140 IF140A IF142 IF1320
Text: Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current
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2N6449,
2N6450
2N6449
IF3601
2N6449
2N6450
IF9030
interfet
B-28
IF140
IF140A
IF142
IF1320
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PDF
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LDO sot23
Abstract: APP1861 CMPT2222A MAX1735 MAX1735EUK25 RMC18-18RJB transistor sot23-3 RMC181
Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: pass transistor, linear regulator, LDO, increase LDO current, more load current Jan 24, 2003 APPLICATION NOTE 1861 Pass Transistor Boosts Current from Negative Linear Regulator Abstract: The addition of a pass transistor to the circuit of Figure 1 allows the linear regulator LDO to deliver
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com/an1861
MAX1735:
AN1861,
APP1861,
Appnote1861,
LDO sot23
APP1861
CMPT2222A
MAX1735
MAX1735EUK25
RMC18-18RJB
transistor sot23-3
RMC181
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PDF
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MMFTN20
Abstract: No abstract text available
Text: MMFTN20 MMFTN20 N-Channel Enhancement Vertical D-MOS Transistor N-Kanal Vertikal D-MOS Transistor - Anreicherungstyp N N Version 2010-09-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type Code
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MMFTN20
OT-23
O-236)
UL94V-0
MMFTN20
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PDF
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MARKING ZT SOT23 TRANSISTOR
Abstract: PBSS4140T PBSS5140T
Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2005 Feb 14 2005 Feb 24 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T FEATURES QUICK REFERENCE DATA
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Original
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PBSS4140T
R75/05/pp9
MARKING ZT SOT23 TRANSISTOR
PBSS4140T
PBSS5140T
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2005 Feb 14 2005 Feb 24 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T FEATURES QUICK REFERENCE DATA
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PBSS4140T
R75/05/pp9
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PDF
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Untitled
Abstract: No abstract text available
Text: MMFTP84 MMFTP84 P-Channel Enhancement Mode Vertical D-MOS Transistor P-Kanal Vertikal D-MOS Transistor - Anreicherungstyp P P Version 2011-01-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type
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MMFTP84
MMFTP84
OT-23
O-236)
UL94V-0
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PDF
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BCP55
Abstract: BCX55 PBSS4160T PBSS5160T
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jun 24 2004 May 12 NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T
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M3D088
PBSS4160T
BCP55
BCX55.
R75/02/pp10
BCX55
PBSS4160T
PBSS5160T
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PDF
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2N7002 NXP MARKING
Abstract: ON5520 fet SMD CODE PACKAGE SOT23 2n7002 nxp FET marking codes smd diode 2n7002 marking code 2N7002 smd TRANSISTOR code marking 05 sot23
Text: ON5520 N-channel TrenchMOS FET Rev. 01 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
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ON5520
O-236AB)
2N7002
ON5520
2N7002 NXP MARKING
fet SMD CODE PACKAGE SOT23
2n7002 nxp
FET marking codes
smd diode 2n7002 marking code
smd TRANSISTOR code marking 05 sot23
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PDF
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PMV40UN2
Abstract: No abstract text available
Text: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV40UN2
O-236AB)
PMV40UN2
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PDF
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV30UN2
O-236AB)
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PDF
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SC-101
Abstract: PMZ760SN
Text: PMZ760SN µTrenchMOS standard level FET Rev. 01 — 24 February 2003 M3D883 Objective data BOTTOM VIEW 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:
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PMZ760SN
M3D883
PMZ760SN
OT883.
OT883,
SC-101
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PDF
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MSB003
Abstract: No abstract text available
Text: Product specification PMV56XN µTrenchMOS extremely low level FET Rev. 02 — 24 June 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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PMV56XN
MSB003
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PDF
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Untitled
Abstract: No abstract text available
Text: PMV56XN µTrenchMOS extremely low level FET Rev. 02 — 24 June 2004 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • TrenchMOS™ technology
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PMV56XN
M3D088
MSB003
mbb076
771-PMV56XN215
PMV56XN
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PDF
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PMV56XN
Abstract: SOT23 FET MSB003
Text: PMV56XN µTrenchMOS extremely low level FET Rev. 02 — 24 June 2004 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • TrenchMOS™ technology
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PMV56XN
M3D088
PMV56XN
SOT23 FET
MSB003
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PDF
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Untitled
Abstract: No abstract text available
Text: C E 24 01 P-Channel Enhancement Mode Field Effect Transistor FEATURES ● ● ● ● PRODUCT SUMMARY Super high dense cell design for low RDS ON Rugged and reliable Simple drive requirement SOT-23 package VDSS ID -20V RDS(ON) (mΩ) Typ 95@ VGS=-4.5V -3.6A
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OT-23
CE2401
Figure10
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TRANSISTOR BC 448 smd
Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors
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OCR Scan
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BRY61
BRY62
OT143B
TRANSISTOR BC 448 smd
JA101P
smd transistor npn 491
transistor TO-92 bc108
transistor pn2222
BC853B
transistor MPSA77
jc5010 215
BC307 smd
2PB601A
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PDF
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