transistor BC 157
Abstract: TRANSISTOR BC 158 TRANSISTOR BC 158 pnp PNP 157A bc 106 transistor BC 158 is npn or pnp BC 327/25 transistor BC 557 npn transistor bc 558 pnp transistor bc 325
Text: EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3SE D • 23fl3314 OdOOOlS fl ■ JZ . COMMERCIAL/ENTERTAINMENT APPLICATIONS s VCEO VCBO VEBO _Volts Device_ min 1C VCE Volts Volts_ mA Volts min hFE at bias min_ min/max_
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O-237
transistor BC 157
TRANSISTOR BC 158
TRANSISTOR BC 158 pnp
PNP 157A
bc 106 transistor
BC 158 is npn or pnp
BC 327/25 transistor
BC 557 npn
transistor bc 558 pnp
transistor bc 325
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CSA715
Abstract: CSC1162
Text: CSA715 CDU, CSA715 PNP PLASTIC POWER TRANSISTOR Complementary to CSC1162 Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM ‘V p T A B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 F eLJ —G—I MAX. 7.8 E V V- MIN. 7.4 2.25 TYP. 0.49 | 0.75
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CSA715
CSA715
CSC1162
23fl33TM
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Untitled
Abstract: No abstract text available
Text: 2N6101 2N6101 NPN PLASTIC POWER TRANSISTOR Medium Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications MIN DIM MAX A 14.42 16.51 B 9,63 10.67 C 3.56 4.83 0.90 E 1.15 1.40 F 3.75 3.86 G 2.29 2.79 H 2,54 3,43 J 0,56 K 12.70 14.73
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2N6101
23fl33TM
000105b
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Untitled
Abstract: No abstract text available
Text: TIP47, TIP48, TIP49, TIP50 TIP47, 48,49, 50 NPN PLASTIC POWER TRANSISTORS Linear and Switching Applications DIM A B C E F G H J K L M N MIN MAX 14.42 9,63 3,56 16.51 10.67 4.83 0,90 1,15 1,40 3,75 3,88 2,29 2,79 2,54 3,43 0,56 12,70 14,73 6,35 2,03 2,92 31.24
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TIP47,
TIP48,
TIP49,
TIP50
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Untitled
Abstract: No abstract text available
Text: 23633^ o d o ü 7 3 h *ì g 7 • BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m
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BC817
BC818
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
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Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PRODS SOE D • A3Ö53Ö3 0004023 T MSONY CXB1560Q-Y SO NY Dual Comparator 7 ^ V5~- 7 Preliminary D escription 32 pin QFP (Ceramic The CXB1560Q-Y is an ultra high-speed comparator which features a clocking/pass-through mode switchover
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CXB1560Q-Y
CXB1560Q-Y
24pin
QFP-24M-S01)
-H-00a0-C
32pin
QFP-32C-L01)
32pin
16pin
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2F P marking
Abstract: CMBT2907 CMBT2907A
Text: CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors M a ik in g PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT2907 = 2B CMBT2907A = 2F 3.0 2 .8" 0.14 0.09 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6
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CMBT2907
CMBT2907A
500mA;
150mA;
2F P marking
CMBT2907
CMBT2907A
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a 3120
Abstract: TIP50 A 3121 IC TIP47 TIP48 TIP49
Text: TIP47, TIP48, TIP49, TIP50 TIP47, 48, 49, 50 NPN PLASTIC POWER TRANSISTORS Linear and Switching Applications DIM A B C E F G H J K L M N MIN MAX 14.42 9.63 3,56 16.51 10.67 4.83 0,90 1,15 1,40 3,75 3,88 2,29 2,79 2,54 3,43 0,56 12,70 14,73 6,35 2.03 2,92 31.24
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TIP47,
TIP48,
TIP49,
TIP50
a 3120
TIP50
A 3121 IC
TIP47
TIP48
TIP49
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2SA970BL
Abstract: BC212A 2SA720r 2SA733P 2SA970 Transistor BC212B 2SA719 2SA719Q 2SA719R 2SA719S
Text: TO-92 Plastic Package Transistors PNP M axim um Ratings Type No. Electrical Characteristics (Ta=25”C, Unless O therw ise S pecified ) PD 'c (W) (A) Tc=25"c C30 ' ces @ & @ Freq (MHz) (pF Ma> NF (dB) Max CDIL Case Style ^EBO (V) Min (V) Min 2SA719 30
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2SA719
2SA719Q
O-92-1
2SA719R
2SA719S
2SA984F
2SA984K
2SA970BL
BC212A
2SA720r
2SA733P
2SA970
Transistor BC212B
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cmbt918
Abstract: marking IAY 000D
Text: CMBT918 V H F/UH F TRANSISTOR N -P -N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M arkin g CMBT918 = 3B _3 .0_ 2.8 Pin configuration 0.46 0.38 3 —^ 0.14 0.09 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02 0.60 0.40 0 .89 " 2.00 1.80 A B SO LU T E M A XIM U M R A T IN G S
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CMBT918
cmbt918
marking IAY
000D
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CBR1545CT
Abstract: No abstract text available
Text: CBR1545CT Dual 4L Dual Centre Tap Schottky Barrier Rectifier Suited for SMPS and High Frequency E)C to DC Converters ABSOLUTE MAXIMUM RATINGS Parameters Symbol Average Rectified Forward Current duty cycle = 0.5; T c = 135 °C Per Diode Per Device . If(AV)
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CBR1545CT
00D11G7
CBR1545CT
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MJE170
Abstract: MJE171 MJE172 MJE180 MJE181 MJE182
Text: MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171, 172 MJE180, 181, 182 PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS 'Low Power Audio Amplifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. CO LLECTO R
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MJE170,
MJE171,
MJE172
MJE180,
MJE181,
MJE182
MJE170
MJE171
MJE180
MJE181
MJE182
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CSA748
Abstract: CSC1398
Text: CSA748 CSA748 PNP PLASTIC POWER TRANSISTOR Complementary CSC1398 Medium Power Amplifier DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1.15 1,40 3.75 3,88 2.29 2.79 2.54 3.4 3 0,5 6 12.70 14,73 6,35 2.03 2.92 31 .2 4 7 DEG 14.42 9,63 3.56 ABSOLUTE MAXIMUM RATINGS
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CSA748
CSA748
CSC1398
23033m
0111b
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v23033
Abstract: a06 transistor TRANSISTOR A06 marking A06 MARKING J1A CMBTA05 CMBTA06
Text: CMBTA05 CMBTA06 CDIL SILICON EPITAXIAL TRANSISTORS N -P -N transistor P A C K A G E O U T L IN E D ETAILS A L L D IM EN SIO N S IN m m M arking CMBTA05 = 1H CMBTA06 = 1G _3.0 2.8 0.14 0.09 0.48 0.38 3 2.6 Pin configuration 2 .4 BASE EMITTER 3 = COLLECTOR _K02
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CMBTA05
CMBTA06
CMBTA05
v23033
a06 transistor
TRANSISTOR A06
marking A06
MARKING J1A
CMBTA06
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2SA10150
Abstract: SO-160
Text: CONTINENTAL DEVICE INDIA b3E D • 23033^4 DGDG1S3 b3b B K D I L - TO-92 PLASTIC PACKAGE TRANSISTORS PNP Maximum Ratings Typ« No. 2SA537 VC80 (V) Un 60 VCEO VEBO (V) (V) Un Un 50 5 Electrical Characteristics 'CBO (UA) VC8
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2SA537
2SA10150
SO-160
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BCG36
Abstract: bc557 SALJ TO-92-4pin BC327-10 to-92-4
Text: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50
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GG00124
O-92-4
BC307B
BC327
BCG36
bc557
SALJ
TO-92-4pin
BC327-10
to-92-4
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2N6706
Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713
Text: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base
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O-237
O-237
O-237-1
O-237-2
TN4037
O-237-2
TN4234
2N6706
2n6730
tn2905
CSC1573
MPSW13
2N6705
2N6707
2N6711
cil916
2N6713
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e9532
Abstract: CXA1994M
Text: SONY CXA1994M M-ary FSK Demodulating Comparator Description The CXA1994M is a comparator which allows the M-ary 4-level FSK data to be demodulated in combination with an FM IF amplifier for pagers. Features • Low power consumption 70pA (at Vcc = 1.4V, including the current on
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CXA1994M
CXA1994M
300mil
OP-8P-L01
OP008-P-0300-A
e9532
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2SA970BL
Abstract: 2SA733P 25A933 2SA720r 2SA970 2SA719 2SA719Q 2SA719R 2SA733 2sa733p 2sa733q 2SA720
Text: TO-92 Plastic Package Transistors PNP M axim um Ratings Type No. Electrical Characteristics (Ta=25”C, Unless O therw ise S pecified ) PD 'c (W) (A) Tc=25"c C30 ' ces @ & @ Freq (MHz) (pF Ma> NF (dB) Max CDIL Case Style ^EBO (V) Min (V) Min 2SA719 30
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2SA719
2SA719Q
O-92-1
2SA719R
2SA719S
2SA984F
2SA984K
2SA970BL
2SA733P
25A933
2SA720r
2SA970
2SA733 2sa733p 2sa733q
2SA720
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CSA1012
Abstract: CSC2562 ic 356 transistor CSA1012
Text: CSA1012, CSC2562 CSA1012 PNP PLASTIC POWER TRANSISTOR CSC2562 NPN PLASTIC POWER TRANSISTOR High Current Switching Applications i— i * r: * .4 IP U = ,C . e , •il t * j DJ g 1 tl DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1.40 3,75
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CSA1012,
CSC2562
CSA1012
CSC2562
ic 356
transistor CSA1012
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Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL TRANSISTORS P-KJ-P transistors Marking BCW89 = H3 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm O .U Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)
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BCW89
23fl33T4
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Untitled
Abstract: No abstract text available
Text: L TIP41, TIP41A, TIP41B, TIP41C TIP42, TIP42A, TIP42B, TIP42C TIP 41, 41 A, 41 B, 41C TIP 4 2 ,42A, 42B, 42C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN
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TIP41,
TIP41A,
TIP41B,
TIP41C
TIP42,
TIP42A,
TIP42B,
TIP42C
23fl33T4
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PDF
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BD168
Abstract: No abstract text available
Text: CDIL BD166, BD168, BD170 BDI66,168,170 PNP PLASTIC POWER TRANSISTORS Complementary BD165, 167,169 Aucjio Amplifier and Driver Circuit Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2.25 TYP.
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BD166,
BD168,
BD170
BDI66
BD165,
23fl33T4
BD168
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PDF
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Untitled
Abstract: No abstract text available
Text: BUX84, BUX84A BUX84, 84A NPN PLASTIC POWER TRANSISTORS High Voltage, High Speed Power Switching Applications DIM A B C E F G H J K I M N MIN 1 4 .« 9.63 3.56 MAX 16.51 10.67 4.83 0.90 1.15 1.40 3,75 3.B8 2.29 2.79 2.54 3.43 0,56 12.70 14,73 6,35 2.92 2,03
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BUX84,
BUX84A
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