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    Untitled

    Abstract: No abstract text available
    Text: KM 23C4200A CMOS MASK ROM 4M-Bit 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF 23C4200A 8/256K 120ns 40-pin KM23C4200A 23C4200A)

    23c2100

    Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
    Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7


    OCR Scan     		PDF KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 23c2100 KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS 42E INC D ? cib4142 O Ü l l l S T KM 23C 4200A 4 • CMOS MASK ROM 4M-Bit 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144x18 • Fast access time: 120ns (max.)


    OCR Scan     		PDF ib4142 8/256K 144x18 120ns 40-pin 23C4200A KM23C4200A 23C4200A)