Untitled
Abstract: No abstract text available
Text: S A MS UN G E L E C T R O N I C S INC 42E D E3 7=Jb4142 G O I U S M 5 SSMGK CMOS MASK ROM 23C4100A 4M-Bit 512Kx8/256Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w ltchable organization Byte Mode: 524,288 x 8 W ord M ode: 26 2,14 4x16 • Fast access tim e : 120ns (m ax.)
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Jb4142
KM23C4100A
512Kx8/256Kx
120ns
40-pln
44-pin
23C4100A
0D111S7
23C4100A)
KM23C4100AFP1)
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GM23C410
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Pin Configuration The GM28C4100A high performance read only memory is organized as 524,288 x 8 bit Byte Mode or as 262,144 x 16 bit (Word Mode) followed by BHE mode select. The 23C4100A offers automatic power down controlled by
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GM28C4100A
GM23C4100A
4Q26757
0D47BS
GM23C410
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Untitled
Abstract: No abstract text available
Text: 23C4100A CMOS MASK ROM 4M-Bit 512K.X 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption
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KM23C4100A
8/256K
120ns
40-pln
44-pin
23C4100A)
23C4100AFP1)
23C4100AFP2)
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Untitled
Abstract: No abstract text available
Text: 23C4100A CMOS MASK ROM 4M-Bit 512Kx8/256Kx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itch ab le organization T h e K M 2 3 C 4 1 0 0 A is a fu lly s ta tic m ask p ro g ra m m a b le ROM Byte M ode: 524,288 x 8 s ilic o n -g a te CMOS p ro c e s s
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KM23C4100A
512Kx8/256Kx16)
23C4100A)
KM23C4100AFP1)
23C4100A
23C4100AFP2)
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Untitled
Abstract: No abstract text available
Text: 23C4100A CMOS MASK ROM 4M-Bit 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swilchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access tim e : 150ns (max.) • Supply voltage: sin g le + 5V • Current consumption
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KM23C4100A
8/256K
150ns
40-pin
44-pin
23C4100A
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