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    Infineon Technologies AG IPD230N06NGBTMA1

    MOSFET N-CH 60V 30A TO252-3
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    230N06N

    Abstract: ipd230n06n
    Text: 230N06N G OptiMOS Power-Transistor Product Summary Features • For dc/dc converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant


    Original     		PDF IPD230N06N PG-TO252-3 230N06N 30gerous 230N06N

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    Abstract: No abstract text available
    Text: 230N06N G OptiMOS Power-Transistor Product Summary Features • For dc/dc converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant


    Original     		PDF IPD230N06N PG-TO252-3 230N06N PG-TO252-3:

    230N06N

    Abstract: 230n06
    Text: 230N06N G OptiMOS Power-Transistor Product Summary Features • For dc/dc converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant


    Original     		PDF IPD230N06N PG-TO252-3 230N06N PG-TO252-3: 230N06N 230n06