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    230N06L Search Results

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    230N06L Price and Stock

    Rochester Electronics LLC IPP230N06L3G

    N-CHANNEL POWER MOSFET
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    Infineon Technologies AG IPP230N06L3-G

    MOSFET N-CH 60V 30A TO220-3
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    Infineon Technologies AG IPB230N06L3GATMA1

    MOSFET N-CH 60V 30A D2PAK
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    Rochester Electronics LLC IPP230N06L3GXKSA1

    N-CHANNEL POWER MOSFET
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    Infineon Technologies AG IPB230N06L3 G

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    Bristol Electronics IPB230N06L3 G 408
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    230N06L Datasheets Context Search

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    230n06l

    Abstract: 230n06 IPB230N06L3 G IPP230N06L3 IPP230N06L3 G IPB230N06L3 JESD22 PG-TO220-3 ipp230n06 D443
    Text: 230N06L3 G 230N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 23 mΩ ID 30 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB230N06L3 IPP230N06L3 PG-TO263-3 PG-TO220-3 230N06L 230n06l 230n06 IPB230N06L3 G IPP230N06L3 G JESD22 PG-TO220-3 ipp230n06 D443

    230n06l

    Abstract: No abstract text available
    Text: 230N06L3 G 230N06L3 G Type OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product (FOM) VDS 60 V RDS(on),max


    Original     		PDF IPB230N06L3 IPP230N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 230N06L 230n06l

    230N06L

    Abstract: smd diode g5
    Text: 230N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant


    Original     		PDF IPD230N06L PG-TO252-3 230N06L PG-TO252-3: 230N06L smd diode g5

    230N06L

    Abstract: 230n06
    Text: 230N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant


    Original     		PDF IPD230N06L PG-TO252-3 230N06L 230N06L 230n06

    230n06l

    Abstract: No abstract text available
    Text: 230N06L3 G 230N06L3 G Type OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 60 V RDS on ,max 23 mW ID 30 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB230N06L3 IPP230N06L3 IEC61249-2-21 PG-TO263-3 230N06L PG-TO220-3 230n06l

    230N06L

    Abstract: IPP230N06L3 G IPP230N06L3 230n06 IEC61249-2-21 IPB230N06L3 JESD22 PG-TO220-3 J-STD-20
    Text: Type 230N06L3 G 230N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 23 mΩ ID 30 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB230N06L3 IPP230N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 230N06L 230N06L IPP230N06L3 G 230n06 IEC61249-2-21 JESD22 PG-TO220-3 J-STD-20