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IXYS Corporation IXFH22N55 MOSFET N-CH 550V 22A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH22N55	Tube			50	1 - 10 - 100 $7.6126 1000 $7.6126 10000 $7.6126	Buy Now
OMRON Industrial Automation WLCA2-2N55 SWITCH LIMIT ROLLER LEVER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	WLCA2-2N55	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
TE Connectivity 5022N5522-9 5022N5522-9
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	5022N5522-9	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $10.14222	Buy Now
Interstate Connecting Components	5022N5522-9					1 - 10 - 100 - 1000 - 10000 $11.932	Buy Now
Sager	5022N5522-9				1	1 $14.2 10 $14.2 100 $12.17 1000 $11.36 10000 $11.36	Buy Now
ITT Interconnect Solutions KJ6T22N55PN CIRCULAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	KJ6T22N55PN	Bulk			25	1 - 10 - 100 $389.1836 1000 $389.1836 10000 $389.1836	Buy Now
Mouser Electronics	KJ6T22N55PN					1 - 10 - 100 $389.17 1000 $389.17 10000 $389.17	Get Quote
Newark	KJ6T22N55PN	Bulk			25	1 - 10 - 100 $368.08 1000 $368.08 10000 $368.08	Buy Now
ITT Interconnect Solutions KJ6T22N55SN CIRCULAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	KJ6T22N55SN	Bulk			25	1 - 10 - 100 $442.5484 1000 $442.5484 10000 $442.5484	Buy Now

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22N55 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
22N55 Abstract: No abstract text available Text: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	PDF	O-247
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158
22N55 Abstract: No abstract text available Text: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	PDF	O-247 100ms 22N55
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Untitled Abstract: No abstract text available Text: □ 1XYS IXFH 22N55 ’reliminary Data HiPerFET“Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low t„ Symbol Test Conditions V*D SS ^ = 25°C to 150°C 550 V VDGR ^ = 25°C to 150°C; RGS = 1 M£2 550 V V GS Continuous ±20 V vw GSM	OCR Scan	PDF	22N55
mosfet 4400 Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,	OCR Scan	PDF	100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Text: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	PDF	O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
IXfk 75 N 50 Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30 Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400	OCR Scan	PDF	76N06-11 76N06-12 76N07-11 76N07-12 67N10 75N10 42N20 50N20 50N20S 58N20 IXfk 75 N 50 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
8n80 Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1	OCR Scan	PDF	CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B