134D686
Abstract: 134d506
Text: 134D www.vishay.com Vishay Sprague Wet Tantalum HI-TMP Capacitors Tantalum-Case with Glass-to-Tantalum Hermetic Seal for - 55 °C to + 200 °C Operation FEATURES • High capacitance • All tantalum, hermetically sealed, tantalum case • + 200 °C high temperature
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
134D686
134d506
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Untitled
Abstract: No abstract text available
Text: VS-ETH3006SHM3, VS-ETH3006-1HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH3006SHM3 • AEC-Q101 qualified, meets JESD 201 class 1A
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VS-ETH3006SHM3,
VS-ETH3006-1HM3
VS-ETH3006SHM3
AEC-Q101
J-STD-020,
O-262
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: New Product VS-ETH3006SHM3, VS-ETH3006-1HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH3006SHM3
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PDF
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VS-ETH3006SHM3,
VS-ETH3006-1HM3
VS-ETH3006SHM3
AEC-Q101
J-STD-020,
O-262
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: New Product VS-ETH1506SHM3, VS-ETH1506-1HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH1506S-M3
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VS-ETH1506SHM3,
VS-ETH1506-1HM3
VS-ETH1506S-M3
VS-ETH1506-1-M3
AEC-Q101
J-STD-020,
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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vom160
Abstract: vom160n VOM160NT
Text: VOM160 www.vishay.com Vishay Semiconductors Optocoupler, Phototriac Output, Non-Zero Crossing, 0.5 kV/ s dV/dt, 600 V FEATURES • High static dV/dt > 0.5 kV/μs • Input sensitivity IFT = 5 mA, 7 mA, and 10 mA A 1 4 MT2 C 2 3 MT1 • On-state RMS current IT RMS = 70 mA
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VOM160
i179066
VOM160
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
vom160n
VOM160NT
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Untitled
Abstract: No abstract text available
Text: STE www.vishay.com Vishay Sprague SuperTan Extended STE Capacitors, Wet Tantalum Capacitors with Hermetic Seal FEATURES Vishay SuperTan® Extended (STE) represents a major breakthrough in wet tantalum capacitor technology. Its unique cathode system, also used
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VBT1045CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses
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VBT1045CBP
O-263AB
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VBT1045CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses
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PDF
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VBT1045CBP
O-263AB
J-STD-020,
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: 134D www.vishay.com Vishay Sprague Wet Tantalum HI-TMP Capacitors Tantalum-Case with Glass-to-Tantalum Hermetic Seal for - 55 °C to + 200 °C Operation FEATURES • High capacitance • All tantalum, hermetically sealed, tantalum case • + 200 °C high temperature
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Original
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PDF
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20emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SMD Power Inductor 0512CDMC/DS Description • Magnetically shielded. • L W H: 5.75 5.45 1.2 mm Max. • Product weight: 0.17g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. x × RoHS Halogen Free Dimension - [mm]
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0512CDMC/DS
22-May-12
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eth1506
Abstract: No abstract text available
Text: VS-ETH1506SHM3, VS-ETH1506-1HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast recovery time Available • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH1506S-M3
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Original
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PDF
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VS-ETH1506SHM3,
VS-ETH1506-1HM3
VS-ETH1506S-M3
AEC-Q101
VS-ETH1506-1-M3
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
eth1506
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Untitled
Abstract: No abstract text available
Text: New Product VS-HFA30PB120HN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization:
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VS-HFA30PB120HN3
AEC-Q101
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VT1045CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
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VT1045CBP
O-220AB
22-B106
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VT3045CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
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Original
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VT3045CBP
O-220AB
22-B106
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VBT2045CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses
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Original
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PDF
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VBT2045CBP
O-263AB
J-STD-020,
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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M3052
Abstract: VOM3052 VOM3053T vom3053
Text: VOM3052, VOM3053 www.vishay.com Vishay Semiconductors Optocoupler, Phototriac Output, Non-Zero Crossing, 1.5 kV/ s dV/dt, 600 V FEATURES • High static dV/dt > 1.5 kV/μs A 4 1 • Input sensitivity IFT = 5 mA and 10 mA MT2 • On-state RMS current IT RMS = 70 mA
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VOM3052,
VOM3053
i179066
VOM3052
VOM3053
VOM3052.
2011/65/EU
M3052
VOM3053T
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G S U N P U B L IS H E D . 2 REUEASED FO R AUU C O P Y R IG H T 1963 By P U B U IC A T IO N R IG H TS - .- R E V IS IO N S RESERVED. 50 - LTR D E S C R IP T IO N c D CONTINUOUS STRIP ON REVISED PER DATE E C R - 12 - 0 0 2 8 6 4 22MAY12
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22MAY12
27SEP2004
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Untitled
Abstract: No abstract text available
Text: 2 4 T H IS D R A W IN G S U N P U B L IS H E D . REUEASED FO R AUU C O P Y R IG H T By P U B U IC A T IO N R IG H TS - .- REVISIO N S 50 RESERVED. - LTR E D E S C R IP T IO N RE VISED PER E C R - 12 - 0 0 2 8 6 4 CONTINUOUS 2 ACCEPTS DATE STRIP 22MAY12
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22MAY12
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Untitled
Abstract: No abstract text available
Text: 2 4 T H IS D R A W IN G S U N P U B L IS H E D . REUEASED FO R AUU C O P Y R IG H T By P U B U IC A T IO N R IG H TS REVISIONS 50 RESERVED. - D E S C R IP T IO N LTR REVISED PER DATE E C R - 12 - 0 0 2 8 6 4 22MAY12 1 ACCEPTS WIRE SIZE [#20—#1 6] AWG.
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22MAY12
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS R E V IS IO N S RESERVED. 50 - D E S C R IP T IO N LTR R EVISED D 1 12.06 [.475] PER E C R - 12 - 0 0 2 8 6 4 DATE DWN APVD 22MAY12 KH
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22MAY12
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Untitled
Abstract: No abstract text available
Text: 2 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - - R E V IS IO N S 50 RESERVED. - LTR R D 1 ] RE VISED PER DATE E C R - 12 - 0 0 2 8 6 4 22MAY12 DWN A PVD KH PD D CONTINUOUS STRIP ON REELS.
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22MAY12
SECTI96-3
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G S 2 U N P U B L IS H E D . REUEASED FO R AUU C O P Y R IG H T By P U B U IC A T IO N R IG H TS - REVIS IO N S .- 50 RESERVED. - LTR D E S C R IP T IO N REVISED PER DATE E C R - 12 - 0 0 2 8 6 4 22MAY12 DWN A PVD KH PD D D 633MAX 020
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22MAY12
633MAX
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R AW IN G CO PYR IG H T S U N P U B L IS H E D . 2 R EU EA SED FO R PU B U IC ATIO N - .- By - REVISIONS 50 AUU RIGHTS R ESER VED . LTR D E S C R IP T IO N DATE REVISED PER E C R - 1 2 - 0 0 2 8 6 4 DWN APVD KH PD 22MAY12 D D 1 CONTINUOUS STRIP ON REELS
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22MAY12
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Untitled
Abstract: No abstract text available
Text: 4 2 T H IS D R AW IN G IS U N P U B L IS H E D . CO PYR IG H T REV ISIO NS R EU EA SED FO R PU B U IC ATIO N 50 AUU RIGHTS R ESER VED . By - LTR D E S C R IP T IO N DATE REVISED PER E C R - 1 2 - 0 0 2 8 6 4 DWN 22MAY12 APVD KH PD D .6 9 1 .68 1 .6 16 —
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22MAY12
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