95n4f
Abstract: STP95N4F3 95n4f3 STD95N4F3 JESD97 STU95N4F3
Text: STD95N4F3 STP95N4F3 - STU95N4F3 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET Power MOSFET General features Type VDSS RDS on ID Pw STD95N4F3 40V <6.5mΩ 80A 110W STP95N4F3 40V <6.5mΩ 80A 110W STU95N4F3 40V <6.5mΩ 80A 110W • Standard threshold drive
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STD95N4F3
STP95N4F3
STU95N4F3
O-220
STP95N4F3
O-220
95n4f
95n4f3
STD95N4F3
JESD97
STU95N4F3
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ISO10373-6
Abstract: SRT512 ISO14443-2 MI b11 transistor A4t 46 diode a4t transistor A4t ISO14443 ISO14443-3 7816-6 AM1
Text: SRT512 13.56 MHz short-range Contactless memory chip with 512-bit EEPROM and anticollision functions Features • ISO 14443-2 Type B Air Interface compliant ■ ISO 14443-3 Type B Frame Format compliant ■ 13.56 MHz carrier frequency ■ 847 kHz subcarrier frequency
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SRT512
512-bit
64-bit
40-year
ISO10373-6
SRT512
ISO14443-2
MI b11
transistor A4t 46
diode a4t
transistor A4t
ISO14443
ISO14443-3
7816-6 AM1
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ST1L02PU18R
Abstract: ST1L02PU25R ST1L02PU33R ST1L02PX
Text: ST1L02 Very low quiescent bicmos voltage regulator Feature summary • Fixed output voltage: 1.8V, 2.5V, 3.3V 1.5V, under customer request ■ Output voltage tolerance: ± 2% at 25°C ■ Output current capability: 1A minimum ■ Very low quiescent current: max 500µA Over
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ST1L02
ST1L02PU18R
ST1L02PU25R
ST1L02PU33R
ST1L02PX
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sot23-5 package marking k520
Abstract: SMD sot23-5 marking E1 marking k52 k520 TS3022 sot23-5 marking K52 TS3021 3022 SOT323-5 transistor k520
Text: TS3021-3022 Rail-to-rail 1.8V high-speed comparator Features • Propagation delay: 33ns ■ Low current consumption: 64 A ■ Rail-to-rail inputs ■ Push-pull outputs ■ Supply operation from 1.8V to 5V ■ Wide temperature range: -40°C to +125°C ■
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TS3021-3022
200mA
TS3021
OT23-5
SC70-5
TS3022
TS3021/2
sot23-5 package marking k520
SMD sot23-5 marking E1
marking k52
k520
TS3022
sot23-5 marking K52
TS3021
3022
SOT323-5
transistor k520
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60N55F3
Abstract: No abstract text available
Text: STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS on ID Pw STB60N55F3 55V <8.5mΩ 80A 110W STD60N55F3 55V <8.5mΩ
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STB60N55F3,
STD60N55F3,
STF60N55F3
STI60N55F3,
STP60N55F3,
STU60N55F3
O-220
O-220FP
STB60N55F3
STD60N55F3
60N55F3
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60N55F3
Abstract: STI60N55F3 STB60N55F3 STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3 60N55
Text: STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS on ID Pw STB60N55F3 55V <8.5mΩ 80A 110W STD60N55F3 55V <8.5mΩ
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STB60N55F3,
STD60N55F3,
STF60N55F3
STI60N55F3,
STP60N55F3,
STU60N55F3
O-220
O-220FP
STB60N55F3
STD60N55F3
60N55F3
STI60N55F3
STB60N55F3
STD60N55F3
STF60N55F3
STP60N55F3
STU60N55F3
60N55
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ISO-14443
Abstract: No abstract text available
Text: SRT512 13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions Features • ISO 14443-2 Type B air interface compliant ■ ISO 14443-3 Type B frame format compliant ■ 13.56 MHz carrier frequency ■ 847 kHz subcarrier frequency
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SRT512
512-bit
64-bit
40-year
ISO-14443
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STB60N55F3
Abstract: STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3 275 L20
Text: STB60N55F3 - STD60N55F3 - STF60N55F3 STP60N55F3 - STU60N55F3 N-channel 55V - 6.5mΩ - 80A - DPAK - IPAK - D2PAK - TO-220/FP STripFET Power MOSFET General features Type VDSS RDS on ID Pw STB60N55F3 55V <8.5mΩ 80A 110W STD60N55F3 55V <8.5mΩ 80A 110W
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STB60N55F3
STD60N55F3
STF60N55F3
STP60N55F3
STU60N55F3
O-220/FP
STB60N55F3
STD60N55F3
STP60N55F3
STF60N55F3
STU60N55F3
275 L20
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ISO103
Abstract: No abstract text available
Text: SRT512 13.56-MHz short-range Contactless memory chip with 512-bit EEPROM and Anti-Collision functions Preliminary Data Features • ISO 14443 - 2 Type B Air Interface compliant ■ ISO 14443 - 3 Type B Frame Format compliant ■ 13.56 MHz carrier frequency
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SRT512
56-MHz
512-bit
847kHz
64-bit
40-year
ISO103
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sp334
Abstract: TO 4818 A 12 E-V 6432 PM 8443 SP334A SP332 SP333 17485e03 8105E 7971E
Text: Product Characterization Report for the SP334 Family of Products SP332, SP333, and SP334 Products Prepared By: Salvador Wu & Greg West Date: March 7, 2007 SP334 Product Family Characterization Report Table of Contents Section Introduction Characterization Procedure
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SP334
SP332,
SP333,
SP334
cE-03
000E-03
A98132:
TO 4818 A 12 E-V
6432
PM 8443
SP334A
SP332
SP333
17485e03
8105E
7971E
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Untitled
Abstract: No abstract text available
Text: TS3021 Rail-to-rail 1.8 V high-speed comparator Features • Propagation delay: 38 ns ■ Low current consumption: 73 µA ■ Rail-to-rail inputs ■ Push-pull outputs ■ Supply operation from 1.8 to 5 V ■ Wide temperature range: -40° C to +125° C ■
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TS3021
OT23-5
SC70-5
TS3021
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Untitled
Abstract: No abstract text available
Text: SRT512 13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions Features • ISO 14443-2 Type B air interface compliant ■ ISO 14443-3 Type B frame format compliant ■ 13.56 MHz carrier frequency ■ 847 kHz subcarrier frequency
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SRT512
512-bit
64-bit
40-year
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Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 LOC CE ALL RIGHTS RESERVED. BY - REVISIONS DIST - P LTR DESCRIPTION A1 DATE ECR-11-018575 DWN APVD KG 27SEP2011 DW 1. ASSEMBLY SHOWN FOR REFERENCE ONLY. SHIPPED LOOSE PIECE AS SHOWN ON PAGE 2.
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ECR-11-018575
27SEP2011
MIL-DTL-38999K,
5M-2009
07SEP2006
22FEB2007
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STD65N55F3
Abstract: No abstract text available
Text: STD65N55F3 N-channel 55V - 6.5mΩ - 80A - DPAK STripFET Power MOSFET Features Type VDSS RDS on ID Pw STD65N55F3 55V <8.5mΩ 80A 110W • Standard threshold drive ■ 100% avalanche tested 3 1 DPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of
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STD65N55F3
STD65N55F3
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M29W640GB
Abstract: M29W640GT M29W640GL
Text: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) FBGA TSOP48 (NA)
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M29W640GH
M29W640GL
M29W640GT
M29W640GB
64-Mbit
16-word/32-byte
M29W640GH/L:
M29W640GT/B
M29W640GB
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SMD sot23-5 marking E1
Abstract: K521 k520 TS3021ICT marking k52 transistor k520 TS3022 JESD97 SC70-5 TS3021
Text: TS3021-TS3022 Rail-to-rail 1.8V high-speed comparator Features • Propagation delay: 33ns ■ Low current consumption: 64 A ■ Rail-to-rail inputs ■ Push-pull outputs ■ Supply operation from 1.8V to 5V ■ Wide temperature range: -40°C to +125°C ■
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TS3021-TS3022
200mA
TS3021
OT23-5
SC70-5
TS3022
TS3021
TS3022
SMD sot23-5 marking E1
K521
k520
TS3021ICT
marking k52
transistor k520
JESD97
SC70-5
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Untitled
Abstract: No abstract text available
Text: SRT512 13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions Datasheet − production data Features • ISO 14443-2 Type B air interface compliant ■ ISO 14443-3 Type B frame format compliant ■ 13.56 MHz carrier frequency
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SRT512
512-bit
64-bit
40-year
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Untitled
Abstract: No abstract text available
Text: ST1L02 Very low quiescent bicmos voltage regulator Feature summary • Fixed output voltage: 1.8V, 2.5V, 3.3V 1.5V, under customer request ■ Output voltage tolerance: ± 2% at 25°C ■ Output current capability: 1A minimum ■ Very low quiescent current: max 500µA Over
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ST1L02
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Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 LOC CE ALL RIGHTS RESERVED. BY - REVISIONS DIST 16 P 1. ASSEMBLY SHOWN FOR REFERENCE ONLY. SHIPPED LOOSE PIECE AS SHOWN ON PAGE 2. LTR DESCRIPTION A1 DATE ECR-11-018575 DWN APVD
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ECR-11-018575
27SEP2011
MIL-DTL-38999K,
06SEP2006
22FEB2007
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ISO14443
Abstract: SRT512 bpsk modulator 13.56MHz 13.56MHZ
Text: SRT512 13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions Features • ISO 14443-2 Type B air interface compliant ■ ISO 14443-3 Type B frame format compliant ■ 13.56 MHz carrier frequency ■ 847 kHz subcarrier frequency
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SRT512
512-bit
64-bit
40-year
ISO14443
SRT512
bpsk modulator 13.56MHz
13.56MHZ
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induction cooker schematic diagram
Abstract: induction cooker circuit diagram schematic diagram induction cooker schematic diagram induction heating induction cooker component list on pcb induction cooker schematic AN2383 control circuit of induction cooker induction cooker microcontroller diagram induction cooker
Text: AN2383 Application note A single plate induction cooker with ST7FLITE09 Introduction This application note describes ST’s Induction Cooking Evaluation Board which can be used to evaluate ST components or to get started quickly with your own induction cooking
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AN2383
ST7FLITE09
induction cooker schematic diagram
induction cooker circuit diagram
schematic diagram induction cooker
schematic diagram induction heating
induction cooker component list on pcb
induction cooker schematic
AN2383
control circuit of induction cooker
induction cooker microcontroller
diagram induction cooker
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Untitled
Abstract: No abstract text available
Text: TRF7960/61 www.ti.com SLOS504A – AUGUST 2006 – REVISED SEPTEMBER 2006 Multi-Standard Fully Integrated 13.56-MHz Radio Frequency Identification RFID Analog Front End and Data Framing Reader System • FEATURES • • • • • • • • Completely integrated protocol handling
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TRF7960/61
SLOS504A
56-MHz
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Untitled
Abstract: No abstract text available
Text: 6 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED ALL COPYRIGHT - FOR 5 4 2 3 PUBLICATION RIGHTS LOC RESERVED. AD BY TYCO ELECTRONICS CORPORATION. D IST R E V IS IO N S 00 LTR L DE SC RIPTIO N ECO —0 7 —0 0 3 7 1 6 DATE DWN APVD 22FEB2007 RB JG THE NOTED DIMENSIONS APPLY AT THE INTERSECTION
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22FEB2007
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. AY COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 2 3 - ALL RIGHTS RESERVED. LOC DIST AD 0 0 R E V IS IO N S P LTR DESCRIPTION L EC O —0 7 —0 0 3 7 1 6 L1 REV PER DATE DWN APVD 22FEB2007 RB JG
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22FEB2007
22AUG09
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