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    Molex E462A3A30022C4H

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    TestEquity LLC E462A3A30022C4H
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    Molex E472P3N30022C4H

    Cab472N 3G075X3000 Pur |Molex E472P3N30022C4H
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    Molex E462P3N30022C4H

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    IBS Electronics E462P3N30022C4H 27 47
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    Woodhead Molex E462P3N30022C4H

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    Master Electronics E462P3N30022C4H
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    22C4H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ESMT F49L160UA/F49L160BA 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES z z Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns z 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands


    Original     		PDF F49L160UA/F49L160BA 152x8 576x16 9s/11s

    MX29LV160CBTC-90

    Abstract: 29LV160C MX29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13
    Text: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of


    Original     		PDF MX29LV160C 16M-BIT 2Mx8/1Mx16] 100mA Pac9/2006 MX29LV160CBTC-90 29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13

    BGA-48P-M13

    Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words


    Original     		PDF DS05-20846-6E 9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 MBM29LV160T/B 16M-bit, 48-pin 48-ball F0306 BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT

    FPT-48P-M19

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20906-1E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM* MBM29LV160TM/BM 90 • DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to


    Original     		PDF DS05-20906-1E MBM29LV160TM/BM 32M-bit, 48-pin 48-ball F0306 FPT-48P-M19

    Untitled

    Abstract: No abstract text available
    Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical


    Original     		PDF M29W160ET M29W160EB TSOP48

    FPT-48P-M19

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20906-3E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM* MBM29LV160TM/BM 90 • DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to


    Original     		PDF DS05-20906-3E MBM29LV160TM/BM 32M-bit, 48-pin 48-ball F0312 FPT-48P-M19

    Untitled

    Abstract: No abstract text available
    Text: F49L160UA/F49L160BA Operation Temperature condition -40 C~85 C 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 3.0V-3.6V Fast access time: 90 ns 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard


    Original     		PDF F49L160UA/F49L160BA 152x8 576x16

    MB84VA2106

    Abstract: MB84VA2107
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50109-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x16) FLASH MEMORY & 1M (× 8) STATIC RAM MB84VA2106-10/MB84VA2107-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time


    Original     		PDF DS05-50109-1E MB84VA2106-10/MB84VA2107-10 MB84VA2106: MB84VA2107: F9805 MB84VA2106 MB84VA2107

    MBM29LV160TE70

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA


    Original     		PDF DS05-20883-5E MBM29LV160TE/BE70/90 MBM29LV160TE/BE 16M-bit, 48-pin 48-ball F0306 MBM29LV160TE70

    EN29LV160BB

    Abstract: EN29LV160BT MX29LV160D MX29LV160DB MX29LV160DT 2249h EN29LV160b mxic
    Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV160B vs MXIC Flash MX29LV160D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/12/01 2005 Eon Silicon Solution Inc. www.ession.com


    Original     		PDF EN29LV160B MX29LV160D MX29LV160D EN29LV160B EN29LV160BB EN29LV160BT MX29LV160DB MX29LV160DT 2249h mxic

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


    Original     		PDF DS05-20846-4E 9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 48-pin 46-pin 48-ball F9904

    Untitled

    Abstract: No abstract text available
    Text: F49L160UA/F49L160BA 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands


    Original     		PDF F49L160UA/F49L160BA 152x8 576x16

    M29W160

    Abstract: M29W160BB M29W160BT sequential timer using 555
    Text: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical


    Original     		PDF M29W160BT M29W160BB TSOP48 LFBGA48 M29W160 M29W160BB M29W160BT sequential timer using 555

    Untitled

    Abstract: No abstract text available
    Text: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical


    Original     		PDF M29W160BT M29W160BB TSOP48 FBGA48

    Untitled

    Abstract: No abstract text available
    Text: MX29LV160T/B, MX29LV161T/B FEATURES 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program


    Original     		PDF MX29LV160T/B, MX29LV161T/B 16M-BIT 2Mx8/1Mx16] 70/90ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte program01

    TSOP 48 Package

    Abstract: No abstract text available
    Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original     		PDF F0404 TSOP 48 Package

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29LV160T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program


    Original     		PDF MX29LV160T/B 16M-BIT 2Mx8/1Mx16] 70/90ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte addresJAN/16/2001 JAN/30/2001

    29lv160c

    Abstract: 29LV160C-70
    Text: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of


    Original     		PDF MX29LV160C 16M-BIT 2Mx8/1Mx16] MX29LV160B 55R/70/90ns 9us/11us 16K-Bytex1, 32K-Bytex1, 64K-Byte PM1186 29lv160c 29LV160C-70

    29LV160

    Abstract: No abstract text available
    Text: MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program


    Original     		PDF MX29LV160T/B MX29LV160AT/AB 16M-BIT 2Mx8/1Mx16] 70/90ns 9us/11us 16K-Bytex1, 32K-Bytex1, 64K-Byte MAR/26/2003 29LV160

    MX29LV161D

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29LV161D T/B 16M-BIT [1M x 16] 3V SUPPLY FLASH MEMORY MX29LV161D T/B DATASHEET P/N:PM1359 REV. 0.09, JUL. 29, 2008 1 ADVANCED INFORMATION MX29LV161D T/B Contents FEATURES . 5


    Original     		PDF MX29LV161D 16M-BIT PM1359

    Untitled

    Abstract: No abstract text available
    Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY „ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read „ ACCESS TIMES: 70, 90ns „ PROGRAMMING TIME – 10 s per Byte/Word typical „ 35 MEMORY BLOCKS


    Original     		PDF M29W160ET M29W160EB

    2216H

    Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
    Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.


    OCR Scan     		PDF TMP95CS54 16-Bit TMP95CS54F TMP95CS54 100-pin 900/H TLCS-90/900 2216H XZ MC11 LQFP100-P-1414-0 TMP95CS54F

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 16 M 2 M x 8 / 1 M x 16 BIT MBM29LV160T-90-12/MBM29LV16 OB-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs


    OCR Scan     		PDF MBM29LV160T-90-12/MBM29LV16 OB-90/-12 48-pin 46-pin 48-ball 6C-46P-M02) 46002S-4C MBM29LV160T-90/-12/M LV160

    C0000-H

    Abstract: 29LV160 29lv160 Flash
    Text: FLASH MEMORY 16M 2M x 8/1M x 16 BIT CMOS MBM29LV160T-80-90-12/MBM29LV16 OB-8O/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs


    OCR Scan     		PDF 48-pin 46-pin 48-ball F9904 C0000-H 29LV160 29lv160 Flash