Untitled
Abstract: No abstract text available
Text: ESMT F49L160UA/F49L160BA 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES z z Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns z 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands
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F49L160UA/F49L160BA
152x8
576x16
9s/11s
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MX29LV160CBTC-90
Abstract: 29LV160C MX29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13
Text: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of
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MX29LV160C
16M-BIT
2Mx8/1Mx16]
100mA
Pac9/2006
MX29LV160CBTC-90
29LV160C
MX29LV160B
MX29LV160CT
SA10
SA11
SA12
SA13
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BGA-48P-M13
Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
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DS05-20846-6E
9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12
MBM29LV160T/B
16M-bit,
48-pin
48-ball
F0306
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
MBM29LV160B-12PBT
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FPT-48P-M19
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20906-1E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM* MBM29LV160TM/BM 90 • DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to
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DS05-20906-1E
MBM29LV160TM/BM
32M-bit,
48-pin
48-ball
F0306
FPT-48P-M19
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Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160ET
M29W160EB
TSOP48
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FPT-48P-M19
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20906-3E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM* MBM29LV160TM/BM 90 • DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to
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DS05-20906-3E
MBM29LV160TM/BM
32M-bit,
48-pin
48-ball
F0312
FPT-48P-M19
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Untitled
Abstract: No abstract text available
Text: F49L160UA/F49L160BA Operation Temperature condition -40 C~85 C 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 3.0V-3.6V Fast access time: 90 ns 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard
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F49L160UA/F49L160BA
152x8
576x16
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MB84VA2106
Abstract: MB84VA2107
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50109-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x16) FLASH MEMORY & 1M (× 8) STATIC RAM MB84VA2106-10/MB84VA2107-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time
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DS05-50109-1E
MB84VA2106-10/MB84VA2107-10
MB84VA2106:
MB84VA2107:
F9805
MB84VA2106
MB84VA2107
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MBM29LV160TE70
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA
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DS05-20883-5E
MBM29LV160TE/BE70/90
MBM29LV160TE/BE
16M-bit,
48-pin
48-ball
F0306
MBM29LV160TE70
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EN29LV160BB
Abstract: EN29LV160BT MX29LV160D MX29LV160DB MX29LV160DT 2249h EN29LV160b mxic
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV160B vs MXIC Flash MX29LV160D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/12/01 2005 Eon Silicon Solution Inc. www.ession.com
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EN29LV160B
MX29LV160D
MX29LV160D
EN29LV160B
EN29LV160BB
EN29LV160BT
MX29LV160DB
MX29LV160DT
2249h
mxic
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20846-4E
9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12
48-pin
46-pin
48-ball
F9904
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Untitled
Abstract: No abstract text available
Text: F49L160UA/F49L160BA 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands
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F49L160UA/F49L160BA
152x8
576x16
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M29W160
Abstract: M29W160BB M29W160BT sequential timer using 555
Text: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical
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M29W160BT
M29W160BB
TSOP48
LFBGA48
M29W160
M29W160BB
M29W160BT
sequential timer using 555
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Untitled
Abstract: No abstract text available
Text: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical
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M29W160BT
M29W160BB
TSOP48
FBGA48
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Untitled
Abstract: No abstract text available
Text: MX29LV160T/B, MX29LV161T/B FEATURES 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B,
MX29LV161T/B
16M-BIT
2Mx8/1Mx16]
70/90ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
program01
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TSOP 48 Package
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0404
TSOP 48 Package
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29LV160T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B
16M-BIT
2Mx8/1Mx16]
70/90ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
addresJAN/16/2001
JAN/30/2001
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29lv160c
Abstract: 29LV160C-70
Text: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of
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MX29LV160C
16M-BIT
2Mx8/1Mx16]
MX29LV160B
55R/70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM1186
29lv160c
29LV160C-70
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29LV160
Abstract: No abstract text available
Text: MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B
MX29LV160AT/AB
16M-BIT
2Mx8/1Mx16]
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
MAR/26/2003
29LV160
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 16 M 2 M x 8 / 1 M x 16 BIT MBM29LV160T-90-12/MBM29LV16 OB-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
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MBM29LV160T-90-12/MBM29LV16
OB-90/-12
48-pin
46-pin
48-ball
6C-46P-M02)
46002S-4C
MBM29LV160T-90/-12/M
LV160
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C0000-H
Abstract: 29LV160 29lv160 Flash
Text: FLASH MEMORY 16M 2M x 8/1M x 16 BIT CMOS MBM29LV160T-80-90-12/MBM29LV16 OB-8O/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
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48-pin
46-pin
48-ball
F9904
C0000-H
29LV160
29lv160 Flash
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CAS IE 116 weighting systems
Abstract: CIL 108 diagram power supply LG 32 lh 35 fr 2249H5C l1303 TMC22*9 TMC2011 TMC2249 D2MS
Text: TRVw TMC2249 C M O S Digital Mixer 1 2 x 1 2 Bit, 3 0 M H z The TMC2249 is a high-speed digital arithmetic circuit consisting of two 12-bit multipliers, an adder and a cascadeable accumulator. All four multiplier inputs are accessible to the user, and each includes a userprogrammable pipeline delay of up to 16 clocks in
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TMC2249
12x12
30MHz
TMC2249
12-bit
24-bit
16-bit
TMC2249s.
30MHz.
CAS IE 116 weighting systems
CIL 108
diagram power supply LG 32 lh 35 fr
2249H5C
l1303
TMC22*9
TMC2011
D2MS
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SB1-S
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-22103 MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 16M-BIT FLASH MEMORY AND 2M-BIT SRAM Description The MC-22103 is a MCP (Multi-Chip Package) of 16,777,216 bits (1,048,576 words by 16 bits) flash memory and
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MC-22103
16M-BIT
MC-22103
48-pin
SB1-S
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Untitled
Abstract: No abstract text available
Text: P R E LIM IN A R Y DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-22107 MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 16M-BIT FLASH MEMORY AND 1M-BIT SRAM Description The MC-22107 is a MCP (Multi-Chip Package) of 16,777,216 bits (1,048,576 words by 16 bits) flash memory and
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MC-22107
16M-BIT
MC-22107
48-pin
MC-22107.
MC-22107F1-DE1-B10
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