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Text: HMC832LP6GE v01.0812 FRACTIONAL-N PLL WITH INTEGRATED VCO 25 - 3000 MHz PLLS WITH INTEGRATED VCO - SMT Features 1 • RF Bandwidth: 25 - 3000 MHz • Fractional Figure of Merit FOM -226 dBc/Hz • 3.3 V Supply • Exact Frequency Mode with 0 Hz frequency error
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HMC832LP6GE
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Abstract: No abstract text available
Text: HMC832LP6GE v01.0812 FRACTIONAL-N PLL WITH INTEGRATED VCO 25 - 3000 MHz PLLS WITH INTEGRATED VCO - SMT Features 1 • RF Bandwidth: 25 - 3000 MHz • Fractional Figure of Merit FOM -226 dBc/Hz • 3.3 V Supply • Exact Frequency Mode with 0 Hz frequency error
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HMC832LP6GE
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Text: HMC832LP6GE v02.0413 FRACTIONAL-N PLL WITH INTEGRATED VCO 25 - 3000 MHz PLLS WITH INTEGRATED VCO - SMT Features 1 • RF Bandwidth: 25 - 3000 MHz • Fractional Figure of Merit FOM -226 dBc/Hz • 3.3 V Supply • Exact Frequency Mode with 0 Hz frequency error
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HMC832LP6GE
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Abstract: No abstract text available
Text: HMC832LP6GE v04.0713 FRACTIONAL-N PLL WITH INTEGRATED VCO 25 - 3000 MHz PLLS WITH INTEGRATED VCO - SMT Features 1 • RF Bandwidth: 25 - 3000 MHz • Fractional Figure of Merit FOM -226 dBc/Hz • 3.3 V Supply • Exact Frequency Mode with 0 Hz frequency error
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HMC832LP6GE
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HMC832LP6GE
Abstract: HMC832 HMC1060LP3 hmc1060 HMC1060LP3E 34410A Hittite 539 WIFI data transmitter and receiver X103A SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER
Text: HMC832LP6GE v00.0812 FRACTIONAL-N PLL WITH INTEGRATED VCO 25 - 3000 MHz PLLS WITH INTEGRATED VCO - SMT Features 1 • RF Bandwidth: 25 - 3000 MHz • Fractional Figure of Merit FOM -226 dBc/Hz • 3.3 V Supply • Exact Frequency Mode with 0 Hz frequency error
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HMC832LP6GE
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HMC832LP6GE
HMC832
HMC1060LP3
hmc1060
HMC1060LP3E
34410A
Hittite 539
WIFI data transmitter and receiver
X103A
SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER
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Abstract: No abstract text available
Text: HMC832LP6GE v05.0614 FRACTIONAL-N PLL WITH INTEGRATED VCO 25 - 3000 MHz PLLs with integrated vco - SMT Features 1 • RF Bandwidth: 25 - 3000 MHz • Fractional Figure of Merit FOM -226 dBc/Hz • 3.3 V Supply • Exact Frequency Mode with 0 Hz frequency error
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Text: RF Amplifier Model TM5519 +5 Volt Operation 5 to 500 MHz see Appendix SPECTRUM MICROWAVE • 2144 Franklin Drive N.E. • Palm Bay, Florida 32905 • Phone: (888) 553-7531 • Fax: (888) 553-7532 226 www.specwave.com SPECTRUM CONTROL GmbH • Hansastrasse 6 • 91126 Schwabach, Germany • Phone: (49)-9122-795-0 • Fax: (49)-9122-795-58
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TM5519
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capacitor 226 35K
Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
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MRF21120
MRF21120S
capacitor 226 35K
105 35K capacitor
226 35K capacitor
capacitor 104 Z30
electrolytic capacitor 226 35k
capacitor 104 35k
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226 35K
Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
226 35K
226 35K capacitor
capacitor 226 35K
electrolytic capacitor 226 35k
226 35K 649
226 35K 750
gps-500
105 35K capacitor
R 226 35k
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226 35K capacitor
Abstract: capacitor 226 35K R 226 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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2170fficiency,
MRF21120
MRF21120S
226 35K capacitor
capacitor 226 35K
R 226 35k
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226 35K capacitor
Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k
Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120R6
226 35K capacitor
capacitor 226 35K
C40 Sprague
105 35K capacitor
R 226 35k
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c38 transistor
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
c38 transistor
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226 35K
Abstract: capacitor 226 35K capacitor 226 35K 022 electrolytic 105 35K capacitor 226 35K capacitor datasheet gps m 89 pin configuration 105 35K capacitor datasheet 226 35K capacitor marking us capacitor pf l1 MRF21120
Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
226 35K
capacitor 226 35K
capacitor 226 35K 022 electrolytic
105 35K capacitor
226 35K capacitor datasheet
gps m 89 pin configuration
105 35K capacitor datasheet
226 35K capacitor
marking us capacitor pf l1
MRF21120
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A4514
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
A4514
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226 35K
Abstract: 105 35K capacitor capacitor 226 35K 022 electrolytic MRF21120 MRF21120R6
Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
226 35K
105 35K capacitor
capacitor 226 35K 022 electrolytic
MRF21120
MRF21120R6
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LMA208C
Abstract: No abstract text available
Text: 2-26 GHz PHEMT Amplifier Filtronic LMA208C Solid State Features • • • • • • • • 9dB Typical Gain 18dBm 1-dB Gain Compression Power 15dB Input/Output Return Loss Typical 2-26GHz Frequency Bandwidth DC Decoupled RF Input and Output Chip Size : 1.986mmX1.082mm .078”X.043”
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LMA208C
18dBm
2-26GHz
986mmX1
082mm
LMA208C
26GHz.
19dBm.
t80/20
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Untitled
Abstract: No abstract text available
Text: Amphenol coaxial connectors RF connectors for plenum cables* Plenum Cable Information Cable Number Dims. Cable Imp. RG-6 Plenum \-rrn im rf'm ^ fc * OD .226-232 Belden 82248 FLMR non i7n 89120 (TFE),87120{FLCP), CC .040 89248 (TFE), Times PLF-6 (FEP)
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31-71000-RFX
31-5558-RFX
UG-914)
31-220NMax
UG-274A)
UG-349A)
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tfk u 226 b
Abstract: tfk 226 tfk 723 STRA 226
Text: Q a v a n tek TFK -2 62 1 M Thin-Film Mixer 2 to 26 G H z Double Balanced FEATURES APPLICATIONS All Thin-Film Ceramic Construction 2.0 to 26.0 GHz RF and LO Bandwidth DC to 500 MHz IF Bandwidth 7 dB Conversion Loss Low V SW R s All Ports Excellent Phase and Amplitude
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2090-6203-00
Abstract: 2090-6204-00
Text: C O A X IA L P O W E R D IV ID E R S TWO-WAY • ISO LATED T A P ER E D STRIPUIME DESIGN • • • • • • • Octave, Multi-Octave And Decade Frequency Coverage Low Insertion Loss Excellent Amplitude And Phase Balance High Isolation Between Output Ports
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MIL-E-5400
MIL-E-16400
SW-282
SVV-265)
2090-6203-00
2090-6204-00
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Untitled
Abstract: No abstract text available
Text: QB H -854 Amplifier P erform ance Specifications Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA) DC Voltage (V) Gain vs. Vdc (dB/V)
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E52-1
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BH 1060
Abstract: No abstract text available
Text: Q BH -4012 Amplifier P erform ance Specifications Min/Max +25 °C Specifications Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)
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TM-611
E52-1
BH 1060
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Transistor BC 227
Abstract: TRANSISTOR BC 206 transistor BC 246 re 10019 transistor bc 207
Text: WJ-A24 / SMA24 5 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH GAIN - TWO STAGES: 20.0 dB TYP. ♦ ULTRA LOW PHASE DEVIATION FROM LINEARITY: < ±2.5°, 100-1500 MHz ♦ LOW VSWR: <1.4:1 (TYP.) ♦ MEDIUM LEVEL OUTPUT: +8 dBm (TYP.)
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WJ-A24
SMA24
50-ohm
0D07010
Transistor BC 227
TRANSISTOR BC 206
transistor BC 246
re 10019
transistor bc 207
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WJA24
Abstract: WJ-A24
Text: uuU A24 / SMA24 5 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH GAIN - TWO STAGES: 20.0 dB TYP. ♦ ULTRA LOW PHASE DEVIATION FROM LINEARITY: < ±2.5°, 100-1500 MHz ♦ LOW VSWR: <1.4:1 (TYP.) ♦ MEDIUM LEVEL OUTPUT: +8 dBm (TYP.)
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SMA24
50-OHM
1-800-WJ1-4401
WJA24
WJ-A24
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Untitled
Abstract: No abstract text available
Text: Whpì HEWLETT XL'rtà PACKARD HI-REL GaAs MMIC Amplifiers Technical Data Features • MIL-STD-883 Equivalent • Broad Bandwidth: 2-26 GHz • High PMÿ 19 dBm at 22 GHz; 15 DBm at 26.5 GHz • 100% RF Tested: -55°C, 125?C • Gain Control: 30 dB Range • Low VSWR: <1.5:1
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HMMC-5022TXV
HMMC-5026TXV
MIL-STD-883
HMMC-5022TXV
HMMC-5026TXV
MIL-STD-883.
5091-0844E
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