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    225L Search Results

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    AD7225LNZ Analog Devices CMOS DAC IC Visit Analog Devices Buy
    SF Impression Pixel

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    Microchip Technology Inc ZL40225LDF1

    IC CLK BUFFER 2:8 750MHZ 32QFN
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    DigiKey ZL40225LDF1 Cut Tape 3,980 1
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    TE Connectivity 55PC0811-22-5LL-CS2502

    HOOK-UP DL STRND 22AWG GRN FEET
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    CUI Devices CMEJ-4622-25-L082

    MIC COND ANLG OMNI -25DB 0.181"D
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    JRH Electronics HTSW-102-25-L-D-LL

    PIN HEADER, LOCKING LEAD, BOARD-
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    Mechatronics Fan Group G1225L24B2-FSR-TTL-NH

    FAN AXIAL 120X25MM 24VDC WIRE
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    225L Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2-25L Chemtronics Desoldering Braid, Wick, Pumps, Soldering, Desoldering, Rework Products, SOLDER REMOVAL BRAID .030" Original PDF
    225LFBD CUSTOM DETECTOR DIODES Scan PDF

    225L Datasheets Context Search

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    SUD06N10-225L-E3

    Abstract: SUD06N10-225L
    Text: SUD06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 Qg (Typ) 27 2.7 TO-252 D G Drain Connected to Tab G D S Top View Order Number: S SUD06N10-225L SUD06N10-225L—E3 (lLead (Pb)-Free)


    Original     		PDF SUD06N10-225L O-252 SUD06N10-225L--E3 08-Apr-05 SUD06N10-225L-E3 SUD06N10-225L

    Untitled

    Abstract: No abstract text available
    Text: SUD06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 Qg (Typ) 27 2.7 TO-252 D G Drain Connected to Tab G D S Top View Order Number: S SUD06N10-225L SUD06N10-225L—E3 (lLead (Pb)-Free)


    Original     		PDF SUD06N10-225L O-252 SUD06N10-225Lâ 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SUD06N10-225L-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () ID (A) 0.200 at VGS = 10 V 6.5 0.225 at VGS = 4.5 V 6 Qg (Typ) 2.7 • TrenchFET Power MOSFETs • Material categorization: For definitions of compliance please see


    Original     		PDF SUD06N10-225L-GE3 O-252 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUU06N10-225L

    Abstract: No abstract text available
    Text: SUU06N10-225L New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET


    Original     		PDF SUU06N10-225L O-251 S-01584--Rev. 17-Jul-00 SUU06N10-225L

    SUD06N10-225L

    Abstract: No abstract text available
    Text: SPICE Device Model SUD06N10-225L Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD06N10-225L 18-Jul-08 SUD06N10-225L

    SUU06N10-225L

    Abstract: 40T10
    Text: SUU06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUU06N10-225L O-251 08-Apr-05 SUU06N10-225L 40T10

    SUD06N10-225L

    Abstract: No abstract text available
    Text: SPICE Device Model SUD06N10-225L Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD06N10-225L 0-to10V 04-Dec-01 SUD06N10-225L

    06N10

    Abstract: 45n05 45N05- 20L sud*45N05-20L dpak code marking t vishay siliconix code marking SQD45N05-20L siliconix marking code VISHAY MARKING CODE
    Text: Part Marking Information Vishay Siliconix DEVICES: TO-252 DPAK TO251 TO-252 TO-251 (Q)45N05- (Q)06N10- 20L 225L LL LL TYWF TYWF Example Part Numbers In Red Type Q = Automotive, for example for SQD45N05-20L. No character otherwise, for example for SUD45N05-20L


    Original     		PDF O-252 O-251 45N05- 06N10- SQD45N05-20L. SUD45N05-20L 30-Apr-09 06N10 45n05 45N05- 20L sud*45N05-20L dpak code marking t vishay siliconix code marking SQD45N05-20L siliconix marking code VISHAY MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUD06N10-225L www.vishay.com Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUD06N10-225L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUD06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 Qg (Typ) 27 2.7 TO-252 D G Drain Connected to Tab G D S Top View Order Number: S SUD06N10-225L SUD06N10-225L—E3 (lLead (Pb)-Free)


    Original     		PDF SUD06N10-225L O-252 SUD06N10-225L SUD06N10-225L--E3 S-42350--Rev. 20-Dec-04

    SUD06N10-225L

    Abstract: No abstract text available
    Text: SUD06N10-225L New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD06N10-225L S N-Channel MOSFET


    Original     		PDF SUD06N10-225L O-252 01584--Rev. 17-Jul-00 SUD06N10-225L

    SUD06N10-225L

    Abstract: No abstract text available
    Text: SUD06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 Qg (Typ) 27 2.7 TO-252 D G Drain Connected to Tab G D S Top View Order Number: S SUD06N10-225L SUD06N10-225L—E3 (lLead (Pb)-Free)


    Original     		PDF SUD06N10-225L O-252 SUD06N10-225L--E3 18-Jul-08 SUD06N10-225L

    SUU06N10-225L

    Abstract: No abstract text available
    Text: SUU06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUU06N10-225L O-251 18-Jul-08 SUU06N10-225L

    4406 mosfet

    Abstract: AN609 SUD06N10-225L
    Text: SUD06N10-225L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUD06N10-225L AN609 22-Aug-07 4406 mosfet

    LMZ14203HTZ

    Abstract: LMZ14203H
    Text: LMZ14203H LMZ14203H 3A SIMPLE SWITCHER Power Module for High Output Voltage Literature Number: SNVS692B LMZ14203H 3A SIMPLE SWITCHER Power Module for High Output Voltage Easy to use 7 pin package Performance Benefits • ■ ■ ■ High efficiency reduces system heat generation


    Original     		PDF LMZ14203H LMZ14203H SNVS692B LMZ14203HTZ

    ADSP-21000

    Abstract: ADSP-21020 ADSP-21060 ADSP-21062 ADSP-21062L tddg
    Text: a ADSP-2106x SHARC DSP Microcomputer Family ADSP-21062/ADSP-21062L SUMMARY High Performance Signal Processor for Communications, Graphics and Imaging Applications Super Harvard Architecture Four Independent Buses for Dual Data Fetch, Instruction Fetch and Nonintrusive I/O


    Original     		PDF ADSP-2106x ADSP-21062/ADSP-21062L 32-Bit 240-Lead 225-Ball 40-Bit ADSP-21062KS-133 ADSP-21062KS-160 ADSP-21000 ADSP-21020 ADSP-21060 ADSP-21062 ADSP-21062L tddg

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 225L Features 2 Amp Schottky Rectifier 25 Volts • Schottky Barrier Rectifier • Guard Ring Protection


    Original     		PDF SK225L DO-214AC

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 225L Features • • • • • • • Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates


    Original     		PDF SK225L DO-214AC

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER: 225LCA050M LO W LEAKAGE CURRENT SURFACE MOUNT CHIP ALUMINUM ELECTROLYTIC CAPACITORS Parts are RoHS com pliant Date code w hen parts became RoHS: 15 £ ELECTRICAL SPECIFICATIONS C apacitance: 2.2 uF T ole ra n ce: -20 % . +20 % Dissipation Factor: 0.1 Max at 120 Hz and 20°C


    OCR Scan     		PDF 225LCA050M 002CV

    LTL-2231AL

    Abstract: No abstract text available
    Text: 3mm CYLINDRICAL LED Wmm& IUTEMNI LTL-2211AL BRIGHT RED LTL-2231AL GREEN LTL.225lAL YiE.tOW LTL-2291AL ORANGE FEATURES • C Y L IN D R IC A L SH A PE. • I.C. C O M P A T IB L E . • L O W P O W E R C O N S U M P T IO N . • LO N G L IF E - S O L ID ST A T E


    OCR Scan     		PDF LTL-2211AL LTL-2231AL 225lAL LTL-2291AL 2231AL

    Untitled

    Abstract: No abstract text available
    Text: +105°C High Frequency Low Impedance Radial Lead Aluminum Electrolytic Capacitors F o r all a p p l i c a t i o n s i n c l u d i n g s w i t c h i n g p o w e r s u p p l i e s FEATURES • Highest Reliability, up to 5000 hours ■ Voltage range: 6.3WVDC to 63 WVDC


    OCR Scan     		PDF 120Hz,

    STM CL-80

    Abstract: acp ca14 AD10 AD14 TXC-05551
    Text: SARA-2 ATM Cell Processing 1C Device TXC-05551 DATA SHEET PRODUCT PREVIEW DESCRIPTION Test Access Port SARA-2 is a single-chip solution using feature/ application-specific microcode that performs complete segmentation and reassembly SAR for implementing


    OCR Scan     		PDF TXC-05551 SALI-25C TXC-05551 STM CL-80 acp ca14 AD10 AD14

    diode E1110

    Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
    Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t


    OCR Scan     		PDF

    QD13

    Abstract: No abstract text available
    Text: I N T E GR AT ED DEVICE. 4 Û ES 77 1 00137=17 SÛ2 • IDT böE D CMOS SyncFlFO 256 X 18, 512 X 18, 1024 x 18, 2048 18 and 409 6 x 18 FEATURES: • • • • • 256 x 18-bit org a n iz a tio n array 7 2205LB 512 x 18-bit org a n iz a tio n array (7 2 2 1 5LB)


    OCR Scan     		PDF IDT72205LB IDT72215LB IDT72225LB IDT72235LB IDT72245LB 18-bit 2205LB QD13