Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are
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DS05-20888-2E
MBM29LV800TE70/90/MBM29LV800BE70/90
MBM29LV800TE/BE
48-pin
MBM29LV800TE/BE
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are
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DS05-20888-2E
MBM29LV800TE70/90/MBM29LV800BE70/90
MBM29LV800TE/BE
48-pin
MBM29LV800TE/BE
F0201
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29LV800
Abstract: TSOP 48 Pattern
Text: PRELIMINARY MX29LV800T/B & MX29LV800AT/AB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV800T/B
MX29LV800AT/AB
1Mx8/512K
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
MAR/01/2002
APR/18/2002
29LV800
TSOP 48 Pattern
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Q002
Abstract: M29W800FT TFBGA48 TSOP48 outline m29w800f
Text: M29W800FT M29W800FB 8 Mbit 1 Mb x8 or 512 Kb ×16, Boot Block 3 V supply Flash memory Preliminary Data Features • Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read ■ Access time: 70 ns ■ Programming time – 10 µs per Byte/Word typical
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M29W800FT
M29W800FB
64-bit
Q002
M29W800FT
TFBGA48
TSOP48 outline
m29w800f
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ST M29W800DT
Abstract: M29W800D M29W800DB M29W800DT TFBGA48
Text: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read ■ Access times: 45, 70, 90ns ■ Programming time – 10µs per Byte/Word typical ■ 19 memory blocks
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M29W800DT
M29W800DB
512Kb
64-and
ST M29W800DT
M29W800D
M29W800DB
M29W800DT
TFBGA48
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MB84VA2002
Abstract: MB84VA2003
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50105-2E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8/× 16) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2002-10/MB84VA2003-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance
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DS05-50105-2E
MB84VA2002-10/MB84VA2003-10
MB84VA2002:
MB84VA2003:
F9805
MB84VA2002
MB84VA2003
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29LV800-90
Abstract: 29LV800-70R 29LV8008 AS29LV800
Text: AS29LV800 March 2001 3V 1M x 8/512K × 16 CMOS Flash EEPROM Features • Organization: 1M×8/512K×16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture—T top or B (bottom)
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AS29LV800
8/512K
8/512K
29LV800-90
29LV800-70R
29LV8008
AS29LV800
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29LV8008
Abstract: a6ll AS29LV800T 29LV800-90
Text: AS29LV800 July 2001 3V 1M x 8/512K × 16 CMOS Flash EEPROM Features • Low power consumption - 200 nA typical automatic sleep mode current - 200 nA typical standby current - 10 mA typical read current • JEDEC standard software, packages and pinouts
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AS29LV800
8/512K
8/512K
29LV8008
a6ll
AS29LV800T
29LV800-90
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29LV800CT/CB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY and erase operation completion. • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection
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MX29LV800CT/CB
1Mx8/512K
100mA
Se08/2005
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Untitled
Abstract: No abstract text available
Text: MBM29LV800TA-70/-90 MBM29LV800BA-70/-90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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MBM29LV800TA-70/-90
MBM29LV800BA-70/-90
F0211
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Untitled
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0404
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CAPACITOR ELITE
Abstract: No abstract text available
Text: ESMT F49L800UA/F49L800BA 8 Mbit 1M x 8/512K x 16 3V Only CMOS Flash Memory 1. FEATURES z z Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns Ready/Busy (RY/ BY ) - RY/ BY output pin for detection of program or erase operation completion End of program or erase detection
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F49L800UA/F49L800BA
8/512K
48-pin
CAPACITOR ELITE
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CAPACITOR ELITE
Abstract: No abstract text available
Text: ESMT F49L800UA/F49L800BA Operation Temperature Condition -40°C~85°C 8 Mbit 1M x 8/512K x 16 3V Only CMOS Flash Memory 1. FEATURES z z Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns Ready/Busy (RY/ BY ) - RY/ BY output pin for detection of program or erase
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F49L800UA/F49L800BA
8/512K
48-pin
CAPACITOR ELITE
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29LV800-70R
Abstract: No abstract text available
Text: ADVANCE INFORMATION MX29LV800T/B 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV800T/B
1Mx8/512K
70/90ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
specifieJUN/28/2000
OCT/24/2000
DEC/19/2000
29LV800-70R
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Untitled
Abstract: No abstract text available
Text: MX29LV800T/B & MX29LV800AT/AB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV800T/B
MX29LV800AT/AB
1Mx8/512K
MX29LV800AT/AB)
100mA
44-pin
48-pin
48-p2002
APR/11/2003
NOV/03/2003
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M29W800FT
Abstract: No abstract text available
Text: M29W800FT M29W400FT M29W800FB M29W400FB 8-Mbit 1 Mbitx8 / 512 Kbit×16 ; 4-Mbit (512 Kbit×8 / 256 Kbit×16) Boot Block 3 V Supply Flash memory Features Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access time: 55 ns, 70 ns, 90 ns (only available
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M29W800FT
M29W400FT
M29W800FB
M29W400FB
64-bit
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION MX29LV081 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8 • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV081
70/90ns
7us/12us
64K-Byte
eraP18
JUN/28/2000
JUL/17/2000
JAN/09/2001
FEB/07/2001
MAR/07/2001
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XX01H
Abstract: No abstract text available
Text: ADVANCE INFORMATION MX29LV400T/B 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV400T/B
70/90ns
9us/11us
16K-Byte
32K-Byte
64K-Byte
atP11
APR/27/2000
MAY/31/2000
JUN/21/2000
XX01H
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29LV800T/B 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV800T/B
1Mx8/512K
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
NOV/23/2001
JAN/24/2002
MAR/01/2002
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION MX29LV400T/B 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV400T/B
70/90ns
9us/11us
16K-Byte
32K-Byte
64K-Byte
Automatic18
JUL/05/2000
JAN/04/2001
JAN/10/2001
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Untitled
Abstract: No abstract text available
Text: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)
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AS29LV800
1MX8/512KX16
8/512K
64Kbyte
32Kword
write/S29LV800T-120SI
AS29LV800T-150SC
AS29LV800T-150SI
AS29IV800B-80SC
AS29D/800B-80SI
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2216H
Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.
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TMP95CS54
16-Bit
TMP95CS54F
TMP95CS54
100-pin
900/H
TLCS-90/900
2216H
XZ MC11
LQFP100-P-1414-0
TMP95CS54F
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Untitled
Abstract: No abstract text available
Text: MCP Multi-Chip Package FLASH MEMORY & SRAM 8M (x 8/x 16) FLASH MEMORY & 1M (x 8) STATIC RAM M B84 VA2006-1o/MB84 VA2007-1o • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature -2 0 to +85°C
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VA2006-1o/MB84
VA2007-1o
MB84VA2006:
MB84VA2007:
F9805
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Untitled
Abstract: No abstract text available
Text: P R E LIM IN A R Y DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-22007 MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 8M-BIT FLASH MEMORY AND 1M-BIT SRAM D e s c r ip tio n The MC-22007 is a MCP (Multi-Chip Package) of 8,388,608 bits (Byte mode : 1,048,576 words by 8 bits, W ord
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MC-22007
MC-22007
48-pin
MC-22007.
MC-22007F1-DB1
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