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    Siemens 5SJ42257HG41

    MCB 5SJ4 2P 240V 25A 14K C-TRIP
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    DigiKey 5SJ42257HG41 Box 4 1
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    Mouser Electronics 5SJ42257HG41 3
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    RS 5SJ42257HG41 Bulk 2 1
    • 1 $115.71
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    Siemens 5SJ42257HG42

    MCB 5SJ4 2P 480/277 25A 10K C-TR
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    DigiKey 5SJ42257HG42 Box 1
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    Mouser Electronics 5SJ42257HG42
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    Vishay Sprague M39003-01-2257H

    CAP TANT 33UF 10% 10V AXIAL
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    DigiKey M39003-01-2257H Bulk 100
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    Siemens 3VA62257HL362AA0

    BRKR 3VA62 3P 250A 100KA ETU3-LI
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    DigiKey 3VA62257HL362AA0 Box 1
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    Siemens 3VA62257HN320AA0

    BRKR 3VA62 3P 250A 100KA ETU3-LS
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    DigiKey 3VA62257HN320AA0 Box 1
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    Mouser Electronics 3VA62257HN320AA0
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    2257H Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    555H

    Abstract: MX29F200B MX29F200T
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001 555H MX29F200B MX29F200T PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte DEC/20/1999 PM0549 PDF

    29F200T

    Abstract: No abstract text available
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001 29F200T PDF

    FPT-48P-M20

    Abstract: DS05 FPT-48P-M19 MBM29F200BA
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–20813–2E FLASH MEMORY CMOS 2M 256K x 8/128K × 16 MBM29F200TA/MBM29F200BA • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


    Original     		8/128K MBM29F200TA/MBM29F200BA 48-pin 44-pin P9603 FPT-48P-M20 DS05 FPT-48P-M19 MBM29F200BA PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20867-4E FLASH MEMORY CMOS 2M 256K x 8/128K × 16 BIT MBM29F200TC-55/-70/-90/MBM29F200BC-55/-70/-90 • GENERAL DESCRIPTION The MBM29F200TC/BC is a 2M-bit, 5.0 V-only Flash memory organized as 256K bytes of 8 bits each or 128K


    Original     		DS05-20867-4E 8/128K 9F200TC-55/-70/-90/MBM29F200BC-55/-70/-90 MBM29F200TC/BC 48-pin 44-pin F0306 PDF

    M29W320E

    Abstract: M29W320EB M29W320ET TFBGA48
    Text: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		M29W320ET M29W320EB M29W320E M29W320EB M29W320ET TFBGA48 PDF

    MX29F200C

    Abstract: PM1250 MX29F200CT Q0-Q15
    Text: MX29F200C T/B 2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 4.5 to 5.5 volt for read, erase, and program operations • 262,144 x 8 / 131,072 x 16 switchable • Boot Sector Architecture


    Original     		MX29F200C 16K-Byte 32K-Byte 64K-Byte 100mA PM1250 MX29F200CT Q0-Q15 PDF

    Macronix

    Abstract: architecture in 4289 MX29F400C Macronix International am29f400b 2257h
    Text: APPLICATION NOTE Migrating to the Macronix MX29F200C & MX29F400C Flash Families from Spansion Am29F200B & Am29F400B Memory Devices. Contents Introduction. 2


    Original     		MX29F200C MX29F400C Am29F200B Am29F400B Macronix architecture in 4289 Macronix International 2257h PDF

    MX29F200CT

    Abstract: Q0-Q15 MX29F200CTTI-70G
    Text: MX29F200C T/B 2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 4.5 to 5.5 volt for read, erase, and program operations • 262,144 x 8 / 131,072 x 16 switchable • Boot Sector Architecture


    Original     		MX29F200C 16K-Byte 32K-Byte 64K-Byte 100mA MX29F200CT Q0-Q15 MX29F200CTTI-70G PDF

    HY29F200

    Abstract: HY29F200B HY29F200T
    Text: HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 70 ns access time · Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and


    Original     		HY29F200T/B 48-Pin HY29F200 16-Bit) G-70I, T-70I R-70I G-70E, T-70E, R-70E HY29F200B HY29F200T PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0549 PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29F200C T/B 2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 4.5 to 5.5 volt for read, erase, and program operations • 262,144 x 8 / 131,072 x 16 switchable • Boot Sector Architecture


    Original     		MX29F200C 16K-Byte 32K-Byte 64K-Byte 100mA PDF

    M29W320E

    Abstract: M29W320EB M29W320ET TFBGA48
    Text: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		M29W320ET M29W320EB M29W320E M29W320EB M29W320ET TFBGA48 PDF

    555H

    Abstract: MX29F200B MX29F200T
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0549 JUN/15/2001 555H MX29F200B MX29F200T PDF

    Untitled

    Abstract: No abstract text available
    Text: FIN A L Am29F200T/Am29F200B AdvaM T£ 2 Megabit 262,144 x 8-BII/131.072 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements


    OCR Scan     		Am29F200T/Am29F200B 8-BII/131 16-Blt) 44-pin 48-pin Am29F200 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY — Am29F200AT/Am29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements


    OCR Scan     		Am29F200AT/Am29F200AB 44-pin 48-pin PDF

    2216H

    Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
    Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.


    OCR Scan     		TMP95CS54 16-Bit TMP95CS54F TMP95CS54 100-pin 900/H TLCS-90/900 2216H XZ MC11 LQFP100-P-1414-0 TMP95CS54F PDF

    Untitled

    Abstract: No abstract text available
    Text: H ig h p e r f o r m a n c e 256K X8/128K X16 5 V C M O S F la s h E E P R O M « II A S29F200 A 2 5 6 K X 8 / 1 2 8 K X 1 6 C M O S Flash EEPROM Preliminary information Features • S ector a rc h ite c tu re - One 16K; tw o 8K; one 32K; and three 64K byte sectors


    OCR Scan     		8/128K AS29F200T-120TI AS29F200B-5SSC AS29F200B-70SC AS29F200B-70SI AS29F200B-90SC AS29F200B-90SI AS29F200B-120SC AS29F200B-120SI AS29F200T-S5SC PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS29F200 I I 5V 256KX8/128Kx 16 CMOS Flash EEPROM Features • Organization: 256Kx8 or 128K xl6 • Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)


    OCR Scan     		AS29F200 256KX8/128Kx 256Kx8 AS29F200B-70TC AS29F200B-70TI AS29F200T-70TC AS29F200T-70TI AS29F200B-70SC AS29F200B-70SI AS29F200T-70SC PDF

    29F200TC

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 2M 256K x 8/128K x 16 BIT MBM29F200TC-55-70-90/MBM29F200BC-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs


    OCR Scan     		8/128K M29F200TC-55-70-90/MBM29F200BC-55/-70/-90 48-pin 44-pin D-63303 F9811 29F200TC PDF

    Untitled

    Abstract: No abstract text available
    Text: H i j j h P i - r f o r m a i K <.• L BB SV C M O S I la s h 1 I P R O M 2 A S 2 l> I ' 2 0 0 A S6K X 8/IZ8K x I6 6 K x 8 / I 2 8 K x 1 6 C M O S Jf /.isii I'I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture


    OCR Scan     		256KX8 128KX16 e-120TC -120TI S29F200B -55SC S29F200B-70SC -90SC PDF

    Untitled

    Abstract: No abstract text available
    Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands


    OCR Scan     		HY29F200T/B HY29F200 16-Bit) G-70I, T-70I R-701 G-70E, T-70E, R-70E G-90I PDF

    29f200-90

    Abstract: AS29F200T
    Text: Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 o r 1 2 8 K X 1 6 • L o w p o w e r c o n s u m p t io n • S e c to r a rc h ite c tu re - O ne 16K; tw o 8K; one 32K ; and three 64K byte sectors - Boot code sector architecture— T top or B (b o ttom )


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20867-3E FLASH MEMORY B lB 2M 256K X 8/128K x 16 BIT MBM29F200TC-55/-70/-90/MBM29F200BC-55/-70A90


    OCR Scan     		DS05-20867-3E 8/128K 29F200TC-55/-70/-90/MBM29F200BC-55/-70A90 48-pin 44-pin F4S029S-2C-2 MBM29 -90/M BM29F200 C-55/-70/-90/M PDF