SA70
Abstract: 2SA31
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES
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DS05-50212-3E
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90
71-ball
F0111
SA70
2SA31
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SA70
Abstract: 18FFFFH
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V
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DS05-50204-2E
MB84VD2218XEC-90/MB84VD2219XEC-90
MB84VD2218XEE-90/MB84VD2219XEE-90
73-ball
MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90
SA70
18FFFFH
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Untitled
Abstract: No abstract text available
Text: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION
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IS71VPCF32XS04
73-ball
CF32ES04-8570BI
IS71VPCF32FS04-8570BI
IS71VPCF32AS04-8585BI
IS71VPCF32BS04-8585BI
IS71VPCF32CS04-8585BI
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DL322
Abstract: DL323 DL324
Text: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am41DL32x4G
16-Bit)
8-Bit/256
73-Ball
FLB073--73-Ball
DL322
DL323
DL324
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SA70
Abstract: 22a17
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V
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DS05-50207-4E
MB84VD2228XEA/EE-85
MB84VD2229XEA/EE-85
71-ball
SA70
22a17
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MARKING SA70
Abstract: MBM29DL324
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0306
MARKING SA70
MBM29DL324
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CA 324G
Abstract: DL322 DL323 DL324
Text: PRELIMINARY Am42DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features SOFTWARE FEATURES
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Am42DL32x4G
16-Bit)
73-Ball
CA 324G
DL322
DL323
DL324
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES
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DS05-50212-3E
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90
71-ball
F0111
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V
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DS05-50204-1E
MB84VD2218XEC-90/MB84VD2219XEC-90
MB84VD2218XEE-90/MB84VD2219XEE-90
73-ball
MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90
BGA-73P-M01)
MB84VD2218XEC/
D-63303
F9909
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DS05
Abstract: 1E0000H 324BE
Text: MBM29DL32XTE/32XBE80/90 データシート 生産終息品 80/90 MBM29DL32XTE/32XBE Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及
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MBM29DL32XTE/32XBE80/90
MBM29DL32XTE/32XBE
DS05-20881-8
MBM29DL32XTE/32XBE
DS05-20881-8
MBM29DL32XTE/BE
Mbit16
DS05
1E0000H
324BE
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DL322
Abstract: DL323 DL324 M41000002R
Text: Am41DL32x8G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am41DL32x8G
DL322
DL323
DL324
M41000002R
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DL322
Abstract: DL323 DL324
Text: Am49DL32xBG Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am49DL32xBG
DL322
DL323
DL324
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SA70
Abstract: SA4664
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50303-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32 M (x ×16) FLASH MEMORY & 16 M (× ×16) Mobile FCRAMTM MB84VD22386EF/VD22387EF/VD22388EF-85 MB84VD22396EF/VD22397EF/VD22398EF-85 • FEATURES • Power Supply Voltage of 2.7 to 3.0 V for FCRAM
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DS05-50303-1E
MB84VD22386EF/VD22387EF/VD22388EF-85
MB84VD22396EF/VD22397EF/VD22398EF-85
SA70
SA4664
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mbm29DL324BD
Abstract: FPT-48P-M19 FPT-48P-M20
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M 4M x 8/2M × 16 BIT MBM29DL32XTD/BD Dual Operation -80/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
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DS05-20873-4E
MBM29DL32XTD/BD
MBM29DL32XTD/MBM29DL32XBD
mbm29DL324BD
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am42DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features SOFTWARE FEATURES
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Am42DL32x4G
16-Bit)
73-Ball
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am42DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features SOFTWARE FEATURES
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Am42DL32x4G
16-Bit)
73-Ball
FLB073--73-Ball
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Am29DL324GB
Abstract: No abstract text available
Text: PRELIMINARY Am41DL32x8G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am41DL32x8G
16-Bit)
8-Bit/512
73-Ball
Am29DL324GB
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PC2255H
Abstract: PC2250 PC2255 0TJ125 PC2251 IC-7531 2255H P4HP-200B uPC2250
Text: データ・シート バイポーラ・アナログ集積回路 Bipolar Analog Integrated Circuit µPC2250 シリーズ システム・リセット端子付き低飽和形安定化電源回路 µ PC2250 シリーズは，入力電圧の低下を検出し，リセット信号を出力する端子を備えた低飽和 4 端子安定化電源
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PC2250
4SIPTO-126
PC2251H,
2253H,
2255H
PC2251H
SIPTO-126
PC2253H
PC2255H
PC2250
PC2255
0TJ125
PC2251
IC-7531
2255H
P4HP-200B
uPC2250
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MARKING HRA
Abstract: AMD K7 data sheet FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20881-6E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32XTE/BE80/90 • DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system
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DS05-20881-6E
MBM29DL32XTE/BE80/90
MBM29DL32XTE/BE
F0303
MARKING HRA
AMD K7 data sheet
FPT-48P-M19
FPT-48P-M20
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DL322
Abstract: DL323 DL324
Text: Am41DL32x4G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am41DL32x4G
FLB073--73-Ball
DL322
DL323
DL324
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UPC2255H
Abstract: 2255h uPC2255 PC2250 uPC2250
Text: DATA SHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2250 SERIES LOW-SATURATED STABILIZED POWER SUPPLY WITH SYSTEM RESET PIN DESCRIPTION The µPC2250 series is a collection of low-saturated 4-pin stabilized power supplies with a pin that outputs a reset
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PC2250
O-126)
UPC2255H
2255h
uPC2255
uPC2250
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MARKING HRA
Abstract: DIODE marking A19 FPT-48P-M19 FPT-48P-M20 MBM29DL323
Text: MBM29DL32XTE/BE80/90 Data Sheet Retired Product MBM29DL32XTE/BE 80/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications
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MBM29DL32XTE/BE80/90
MBM29DL32XTE/BE
DS05-20881-8E
F0306
ProductDS05-20881-8E
MARKING HRA
DIODE marking A19
FPT-48P-M19
FPT-48P-M20
MBM29DL323
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tfk 136
Abstract: No abstract text available
Text: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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THMY6416C1BEG-80L
216-WORD
64-BIT
THMY6416C1BEG
TC59S6408BFT
64-bit
THMY6416C1BEG)
tfk 136
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2216H
Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.
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TMP95CS54
16-Bit
TMP95CS54F
TMP95CS54
100-pin
900/H
TLCS-90/900
2216H
XZ MC11
LQFP100-P-1414-0
TMP95CS54F
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