transistor 2222a
Abstract: transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP
Text: SMBT 2222A NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP 2 1 Type Marking SMBT 2222A s1B Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23
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VPS05161
OT-23
2222/A
EHP00744
EHP00745
Oct-14-1999
transistor 2222a
transistor 2222a CURRENT GAIN
2222A transistor
2222a
2907a TRANSISTOR PNP
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO 30 40 Vdc Collector–Base Voltage V CBO 60 75 Vdc Emitter–Base Voltage
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LMBT2222LT1
LMBT2222ALT1
LMBT2222LT1
OT-23
LMBT2222â
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Untitled
Abstract: No abstract text available
Text: General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO 30 40 Vdc Collector–Base Voltage V CBO 60 75 Vdc Emitter–Base Voltage V 5.0
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MMBT2222LT1
MMBT2222ALT1
236AB)
De4-4714
MMBT2222LT1
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transistor 2222a to-92
Abstract: MMBT2222ALT1 1P Marking code CS 1n914 SOD123 2305 SOT-23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage VCEO 30 40 Vdc Collector – Base Voltage
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MMBT2222LT1
MMBT2222ALT1*
236AB)
transistor 2222a to-92
MMBT2222ALT1 1P
Marking code CS
1n914 SOD123
2305 SOT-23
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1N914
Abstract: MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222a
Text: ON Semiconductort MMBT2222LT1 MMBT2222ALT1* General Purpose Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2222 2222A Unit Collector–Emitter Voltage VCEO 30 40 Vdc Collector–Base Voltage VCBO 60 75 Vdc Emitter–Base Voltage
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MMBT2222LT1
MMBT2222ALT1*
r14525
MMBT2222LT1/D
1N914
MMBT2222
MMBT2222A
MMBT2222ALT1
MMBT2222LT1
2222a
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m1b marking
Abstract: MMBT2222 MMBT2222A 1N914 MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA
Text: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage
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MMBT2222LT1/D
MMBT2222LT1
MMBT2222ALT1*
236AB)
MMBT2222LT1/D*
m1b marking
MMBT2222
MMBT2222A
1N914
MMBT2222ALT1
MMBT2222LT1
2222A MOTOROLA
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MMBT2222A
Abstract: 2222A MMBT2222ALT1 m1b marking transistor 2222a data sheet 1N914 MMBT2222 MMBT2222LT1
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO 30 40 Vdc Collector–Base Voltage V CBO 60 75 Vdc Emitter–Base Voltage
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MMBT2222LT1
MMBT2222ALT1
236AB)
MMBT2222LT1
MMBT2222A
2222A
MMBT2222ALT1
m1b marking
transistor 2222a data sheet
1N914
MMBT2222
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m1b marking
Abstract: 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA 1N914 SOT-23
Text: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage
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MMBT2222LT1/D
MMBT2222LT1
MMBT2222ALT1*
236AB)
MMBT2222LT1/D*
m1b marking
1N914
MMBT2222
MMBT2222A
MMBT2222ALT1
MMBT2222LT1
2222A MOTOROLA
1N914 SOT-23
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1P marking
Abstract: LMBT2222ALT1G m1b marking LMBT2222LT1G 1N914 f250300
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. 3 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO
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LMBT2222LT1G
LMBT2222ALT1G
3000/Tape
OT-23
1P marking
LMBT2222ALT1G
m1b marking
LMBT2222LT1G
1N914
f250300
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M1B marking
Abstract: transistor 2222a data sheet LMBT2222ALT1G 1N914 LMBT2222ALT1 LMBT2222LT1 LMBT2222LT1G
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage
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LMBT2222LT1
LMBT2222ALT1
LMBT2222LT1
M1B marking
transistor 2222a data sheet
LMBT2222ALT1G
1N914
LMBT2222ALT1
LMBT2222LT1G
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2907A
Abstract: 2907a TRANSISTOR PNP transistor s2f S2F MARKING SOT23 2907a transistor npn 2907A S2F SOT-23 s2F SOT23 PNP 2907a SOT23 Q68000-A6474
Text: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking Ordering Code Pin Configuration SMBT 2907A s2F 1=B Q68000-A6474 2=E
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Q68000-A6474
VPS05161
OT-23
Jan-22-1999
2907/A
EHP00754
2907A
2907a TRANSISTOR PNP
transistor s2f
S2F MARKING SOT23
2907a transistor
npn 2907A
S2F SOT-23
s2F SOT23
PNP 2907a SOT23
Q68000-A6474
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2907 TRANSISTOR PNP
Abstract: 2907a 2907 2907a transistor 2907a TRANSISTOR PNP npn 2907A TRANSISTOR S2F a 2907 MARKING 2907A transistor 2907
Text: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking SMBT 2907A s2F Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23
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VPS05161
OT-23
2907/A
EHP00752
EHP00753
Oct-14-1999
EHP00754
2907 TRANSISTOR PNP
2907a
2907
2907a transistor
2907a TRANSISTOR PNP
npn 2907A
TRANSISTOR S2F
a 2907
MARKING 2907A
transistor 2907
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage
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LMBT2222LT1
LMBT2222ALT1
LMBT2222LT1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage
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LMBT2222LT1G
LMBT2222ALT1G
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Untitled
Abstract: No abstract text available
Text: MPS2222 MPS2222A 3 TO-92 2 1 1 MP S 2222 MP S 2222A MP S 2222 MP S 2222A MP S 2222 MP S 2222A MP S 2222A MP S 2222 MP S 2222A MP S 2222 MP S 2222A MP S 2222A MP S 2222A WEITRON http://www.weitron.com.tw 2 3 MPS2222 MPS2222A ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued)
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MPS2222
MPS2222A
86MAX
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2222A
Abstract: transistor 2222a data sheet 2222 mps2222 transistor 2222a mp 2222a transistor 2222a data sheet to-92 2222A transistor mp 40 MP transistor mps2222 transistor
Text: MPS2222 MPS2222A 3 TO-92 2 1 1 MP S 2222 MP S 2222A MP S 2222 MP S 2222A MP S 2222 MP S 2222A MP S 2222A MP S 2222 MP S 2222A MP S 2222 MP S 2222A MP S 2222A MP S 2222A WEITRON http://www.weitron.com.tw 2 3 MPS2222 MPS2222A ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued)
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MPS2222
MPS2222A
270TYP
2222A
transistor 2222a data sheet
2222 mps2222
transistor 2222a
mp 2222a
transistor 2222a data sheet to-92
2222A transistor
mp 40
MP transistor
mps2222 transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1B Q68000-A6481 1=B
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Q68000-A6481
OT-23
Jan-22-1999
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transistor 2222a
Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B
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Q68000-A6481
OT-23
EHN0005
EHN00056
10CK2,
Jan-22-1999
transistor 2222a
transistor 2222a CURRENT GAIN
2222a sot23
2222A transistor
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mmbt2222A
Abstract: MMBT2222ALT1 marking QE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBT2222LT1 MMBT2222ALT1* General Purpose T ran sisto rs NPN Silicon ’M otorola Preferred Device MAXIMUM RATINGS Symbol 2222 2222A Unit Collector-Emitter Voltage VCEO 30 40 Vdc Collector-Base Voltage v CBO 60 75 Vdc
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MMBT2222LT1
MMBT2222ALT1*
O-236AB)
b3tj75SS
MMBT2222ALT1
R307b
mmbt2222A
MMBT2222ALT1
marking QE
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Untitled
Abstract: No abstract text available
Text: 32E D • â23b320 0017103 7 H S IP NPN Silicon Switching Transistors PZT 2222;PZT 2222A SIEMENS/ SPCLi SEMICONDS _ • High DC current gain: 0.1 to 500 mA • Low collector -emitter saturation voltage • Complementary types: PZT 2907 PNP PZT 2907A (PNP)
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23b320
12-mm
Q62702-Z2026
OT-223
PZT2222A
Q62702-Z2027
150Hz
200ns
10Mfi
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2907a TRANSISTOR PNP
Abstract: 2907a transistor s2f sot-23 marking 2907A symbol TRANSISTOR S2F
Text: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: S M B T 2222A NPN Type Marking Ordering Code Pin Configuration S M B T 2907A s2F Q68000-A6474
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Q68000-A6474
OT-23
Jan-22-1999
EHPGQ751
2907a TRANSISTOR PNP
2907a transistor
s2f sot-23 marking
2907A symbol
TRANSISTOR S2F
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-em itter saturation voltage • C om plem entary type: SM BT 2222A NPN Type Marking Ordering Code Pin Configuration SM BT 2907A s2F Q 68000-A6474
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68000-A6474
OT-23
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mpq2222a
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Q uad General Purpose T ran sisto rs M PQ 2222 M P Q 2222A * NPN Silicon La x J l A J ‘Motorola Preferred Device NPN I M I , ,1,Y ! UJ m liJ UJ li! LiJ Li 1 M AXIM U M R ATINGS Rating Symbol MPQ2222 Collector-Emitter Voltage
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MPQ2222
MPQ2222A
O-116
MPQ2222
mpq2222a
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Untitled
Abstract: No abstract text available
Text: M C C SOT-23 P lastic-E ncap sulate T ra n s is to rs ^ M M B T 2222A LT 1 TRANSISTO R NPN 1 .BASE 2.EMITTER 3.COLLECTOR FEATURES Power dissipation Pcm : 0.3 W (Tamb=25'C) C ollector current ICM: 0.6 A 2.4 C ollector-base voltage « 1-3 * V(BR)CBO: 75V Operating and storage junction temperature range
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OT-23
MMBT2222ALT1
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