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    Untitled

    Abstract: No abstract text available
    Text: Intermediate Bus Converter 48Vin, 9.6Vout @ 25A Features • • • • • • • • • • • 48vin, Isolated, 5:1 Fixed Conversion Ratio 9.6v Nominal Out 220watt Max Output @ 36V, 55°C 300watt Max Output @ 55V, 55°C Parallel For Higher Output Power


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    PDF 48Vin, 220watt 300watt QUS25-096 Jul13-2004 QUS25-096-NHDR QUS25-096-NHBR

    transistor di 960

    Abstract: No abstract text available
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


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    PDF PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-34288-2 transistor di 960

    LM7805

    Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


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    PDF PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt LM7805 elna 50v BCP56 RO4350

    Untitled

    Abstract: No abstract text available
    Text: PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output


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    PDF PXFC192207FH PXFC192207FH 220-watt

    DPSN-220AB-1

    Abstract: Delta Electronics dpsN dpsN 12VRTN DPSN-220AB DELTA dpsn 0012 15KV EN61000-4-2 EN61000-4-5
    Text: w w w. d e l t a w w. c o m DPSN-220AB-1 A Series FEATURES Efficiency: Universal input Redundant Power Protection: Power Density: Alarm Signals: 11.5 L x 3 (W) x 1.5 (H) in 3 C MECHANICAL DRAWING >75% before OR-ing Diode Latched mode OVP, OCP & OTP 3 4.25 W/in


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    PDF DPSN-220AB-1 Delta Electronics dpsN dpsN 12VRTN DPSN-220AB DELTA dpsn 0012 15KV EN61000-4-2 EN61000-4-5

    a2324

    Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced


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    PDF PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2 a2324 H-37260-2 elna 50v LM7805 05 BCP56 LM7805 RO4350

    100uf HFK

    Abstract: HFK CAPACITOR 100 HFK capacitor
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


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    PDF PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-33288-2 H-34288-2 100uf HFK HFK CAPACITOR 100 HFK capacitor

    Untitled

    Abstract: No abstract text available
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


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    PDF PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt

    12v subwoofer car amp circuits

    Abstract: sony subwoofer circuit diagram tone control subwoofer circuit diagram car subwoofer amplifier circuit diagram 100 watts subwoofer circuit diagram 12V mono amplifier 400 watts high subwoofer 100 watts amplifier sony subwoofer car subwoofer power amplifier diagram subwoofer pre circuits
    Text: 3-867-642-11 1 Caractéristiques Emplacement et fonction des commandes 1 MODE (Subwoofer) indicator Indicates HI-CURRENT mode or HI-VOLTAGE mode. 2 POWER/PROTECTOR indicator • OVER CURRENT lights up in green during normal operation. The color will change from green to amber when receiving a powerful signal.


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    PDF 400Hz 200Hz 12v subwoofer car amp circuits sony subwoofer circuit diagram tone control subwoofer circuit diagram car subwoofer amplifier circuit diagram 100 watts subwoofer circuit diagram 12V mono amplifier 400 watts high subwoofer 100 watts amplifier sony subwoofer car subwoofer power amplifier diagram subwoofer pre circuits

    PTFA082201E

    Abstract: RO4350 elna 50v elna capacitor BCP56 LM7805 PTFA082201F ceramic capacitor 39 pf A34 rf 35V ELNA Electrolytic capacitor
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


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    PDF PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt RO4350 elna 50v elna capacitor BCP56 LM7805 ceramic capacitor 39 pf A34 rf 35V ELNA Electrolytic capacitor

    Untitled

    Abstract: No abstract text available
    Text: WADE-2232Q The WADE-2232Q is a rugged and stylish barebones system suitable for embedded applications that stand alone or are rackmounted. Its effective ventilation is achieved by the mesh design of the front panel. No actual tool is needed to release the top cover of chassis,


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    PDF WADE-2232Q WADE-2232Q 220-watt WADE-2232Q-582R-220X PEP-582R, WADE-2232Q-592R-220X PEP-592R, Mini-ITX-WADE-2232Q

    PTFA092213EL

    Abstract: LM7805 resistor 51k transistor c331 BCP56 R250 RO4350
    Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier


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    PDF PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, LM7805 resistor 51k transistor c331 BCP56 R250 RO4350

    EJTAG Tiny Tools CPLD

    Abstract: TSMC eDRAM ATML U 932 compaq presario ATML 932 Trident plus broadcom Siemens lg Ni1000 temperature sensor Photobit PB-100 irf 3502 SUN HOLD MD-5
    Text: SEMICONDUCTOR TIMES FEBRUARY 1999 FEBRUARY 1999 / 1 FOCUSED ON EMERGING SEMICONDUCTOR COMPANIES Radar Scope LTX announced that Accelerix has purchased and taken delivery of a Delta STE, configurable to 512 digital channels, mixed signal instruments and the memory test option. Accelerix, a fabless


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    PDF

    CW 7805

    Abstract: PTFA092213EL H-34288-6 PTFA092213EL ESD BCP56 LM7805 R250 RO4350 H-33288-6 240-2520-2-ND
    Text: PTFA092213EL PTFA092213FL Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band. These devices feature


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    PDF PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, H-33288-6 H-34288-6 CW 7805 H-34288-6 PTFA092213EL ESD BCP56 LM7805 R250 RO4350 H-33288-6 240-2520-2-ND

    Untitled

    Abstract: No abstract text available
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Thermally-enhanced


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    PDF PTFA092201E PTFA092201F 220-watt, H-30260-2 H-31260-2

    Untitled

    Abstract: No abstract text available
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced


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    PDF PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2

    100 HFK

    Abstract: HFK CAPACITOR 100uf HFK 100 HFK capacitor ELNA capacitor 100 uf 50v diode c723 LM7805 05 330 hfk 8 LM7805 PTFA092211EL
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


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    PDF PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-33288-2 H-34288-2 100 HFK HFK CAPACITOR 100uf HFK 100 HFK capacitor ELNA capacitor 100 uf 50v diode c723 LM7805 05 330 hfk 8 LM7805

    7909 regulator

    Abstract: PTFA092213ELV4
    Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier


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    PDF PTFA092213EL PTFA092213FL PTFA092213FL 220-watt, H-33288-6 H-34288-4/2 7909 regulator PTFA092213ELV4

    PTFB092707FH

    Abstract: No abstract text available
    Text: PTFB092707FH advance specification Description advance specification Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 925 – 960 MHz Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance


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    PDF PTFB092707FH PTFB092707FH 220-watt

    GS 9425

    Abstract: PTFA092211EL PTFA092211FL package tray design dwg
    Text: Preliminary PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


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    PDF PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, PTFA092211FL* H-34288-2 GS 9425 package tray design dwg

    Southco 52-99-215

    Abstract: 52-99-215 Delta Electronics dpsN 130 DPSN Southco dpsn-220ab DPSN 96 DPSN-220AB A EN61000-4-2 EN61000-4-5
    Text: w w w. d e l t a w w. c o m DPSN-220AB A Series FEATURES Efficiency: >75%@full load, min. line Universal input Redundant Power Protection: Latched mode OVP, OCP & OTP Harmonic: EN61000-3-2 class D PF>0.97@full load, nominal line 3 Power Density: 4 W/in Alarm Signals:


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    PDF DPSN-220AB EN61000-3-2 Southco 52-99-215 52-99-215 Delta Electronics dpsN 130 DPSN Southco DPSN 96 DPSN-220AB A EN61000-4-2 EN61000-4-5

    Untitled

    Abstract: No abstract text available
    Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power ampliier


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    PDF PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, H-34288-4/2

    MENB1030

    Abstract: No abstract text available
    Text: External Power Supply International Efficiency Level V ErP Phase 2 By Maggie Nadjmi March 16th 2011 Background More than one billion external power supplies are sold worldwide each year Majority of these supplies are used to convert the high voltage AC to the low


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    PDF 100MWatt 75Watts) MW156 110Watts) MENB1030

    elna 50v

    Abstract: BCP56 LM7805 PTFA092201E PTFA092201F RO4350
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced


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    PDF PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2 elna 50v BCP56 LM7805 RO4350