Untitled
Abstract: No abstract text available
Text: Intermediate Bus Converter 48Vin, 9.6Vout @ 25A Features • • • • • • • • • • • 48vin, Isolated, 5:1 Fixed Conversion Ratio 9.6v Nominal Out 220watt Max Output @ 36V, 55°C 300watt Max Output @ 55V, 55°C Parallel For Higher Output Power
|
Original
|
48Vin,
220watt
300watt
QUS25-096
Jul13-2004
QUS25-096-NHDR
QUS25-096-NHBR
|
PDF
|
transistor di 960
Abstract: No abstract text available
Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications
|
Original
|
PTFA092211EL
PTFA092211FL
PTFA092211EL
PTFA092211FL
220-watt,
H-34288-2
transistor di 960
|
PDF
|
LM7805
Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350
Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in
|
Original
|
PTFA082201E
PTFA082201F
PTFA082201E
PTFA082201F
220-watt
LM7805
elna 50v
BCP56
RO4350
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output
|
Original
|
PXFC192207FH
PXFC192207FH
220-watt
|
PDF
|
DPSN-220AB-1
Abstract: Delta Electronics dpsN dpsN 12VRTN DPSN-220AB DELTA dpsn 0012 15KV EN61000-4-2 EN61000-4-5
Text: w w w. d e l t a w w. c o m DPSN-220AB-1 A Series FEATURES Efficiency: Universal input Redundant Power Protection: Power Density: Alarm Signals: 11.5 L x 3 (W) x 1.5 (H) in 3 C MECHANICAL DRAWING >75% before OR-ing Diode Latched mode OVP, OCP & OTP 3 4.25 W/in
|
Original
|
DPSN-220AB-1
Delta Electronics dpsN
dpsN
12VRTN
DPSN-220AB
DELTA dpsn
0012
15KV
EN61000-4-2
EN61000-4-5
|
PDF
|
a2324
Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350
Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced
|
Original
|
PTFA092201E
PTFA092201F
PTFA092201E
PTFA092201F
220-watt,
H-36260-2
H-37260-2
a2324
H-37260-2
elna 50v
LM7805 05
BCP56
LM7805
RO4350
|
PDF
|
100uf HFK
Abstract: HFK CAPACITOR 100 HFK capacitor
Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications
|
Original
|
PTFA092211EL
PTFA092211FL
PTFA092211EL
PTFA092211FL
220-watt,
H-33288-2
H-34288-2
100uf HFK
HFK CAPACITOR
100 HFK capacitor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in
|
Original
|
PTFA082201E
PTFA082201F
PTFA082201E
PTFA082201F
220-watt
|
PDF
|
12v subwoofer car amp circuits
Abstract: sony subwoofer circuit diagram tone control subwoofer circuit diagram car subwoofer amplifier circuit diagram 100 watts subwoofer circuit diagram 12V mono amplifier 400 watts high subwoofer 100 watts amplifier sony subwoofer car subwoofer power amplifier diagram subwoofer pre circuits
Text: 3-867-642-11 1 Caractéristiques Emplacement et fonction des commandes 1 MODE (Subwoofer) indicator Indicates HI-CURRENT mode or HI-VOLTAGE mode. 2 POWER/PROTECTOR indicator • OVER CURRENT lights up in green during normal operation. The color will change from green to amber when receiving a powerful signal.
|
Original
|
400Hz
200Hz
12v subwoofer car amp circuits
sony subwoofer circuit diagram
tone control subwoofer circuit diagram
car subwoofer amplifier circuit diagram
100 watts subwoofer circuit diagram
12V mono amplifier 400 watts
high subwoofer 100 watts amplifier
sony subwoofer
car subwoofer power amplifier diagram
subwoofer pre circuits
|
PDF
|
PTFA082201E
Abstract: RO4350 elna 50v elna capacitor BCP56 LM7805 PTFA082201F ceramic capacitor 39 pf A34 rf 35V ELNA Electrolytic capacitor
Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in
|
Original
|
PTFA082201E
PTFA082201F
PTFA082201E
PTFA082201F
220-watt
RO4350
elna 50v
elna capacitor
BCP56
LM7805
ceramic capacitor 39 pf
A34 rf
35V ELNA Electrolytic capacitor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WADE-2232Q The WADE-2232Q is a rugged and stylish barebones system suitable for embedded applications that stand alone or are rackmounted. Its effective ventilation is achieved by the mesh design of the front panel. No actual tool is needed to release the top cover of chassis,
|
Original
|
WADE-2232Q
WADE-2232Q
220-watt
WADE-2232Q-582R-220X
PEP-582R,
WADE-2232Q-592R-220X
PEP-592R,
Mini-ITX-WADE-2232Q
|
PDF
|
PTFA092213EL
Abstract: LM7805 resistor 51k transistor c331 BCP56 R250 RO4350
Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier
|
Original
|
PTFA092213EL
PTFA092213FL
PTFA092213EL
PTFA092213FL
220-watt,
LM7805
resistor 51k
transistor c331
BCP56
R250
RO4350
|
PDF
|
EJTAG Tiny Tools CPLD
Abstract: TSMC eDRAM ATML U 932 compaq presario ATML 932 Trident plus broadcom Siemens lg Ni1000 temperature sensor Photobit PB-100 irf 3502 SUN HOLD MD-5
Text: SEMICONDUCTOR TIMES FEBRUARY 1999 FEBRUARY 1999 / 1 FOCUSED ON EMERGING SEMICONDUCTOR COMPANIES Radar Scope LTX announced that Accelerix has purchased and taken delivery of a Delta STE, configurable to 512 digital channels, mixed signal instruments and the memory test option. Accelerix, a fabless
|
Original
|
|
PDF
|
CW 7805
Abstract: PTFA092213EL H-34288-6 PTFA092213EL ESD BCP56 LM7805 R250 RO4350 H-33288-6 240-2520-2-ND
Text: PTFA092213EL PTFA092213FL Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band. These devices feature
|
Original
|
PTFA092213EL
PTFA092213FL
PTFA092213EL
PTFA092213FL
220-watt,
H-33288-6
H-34288-6
CW 7805
H-34288-6
PTFA092213EL ESD
BCP56
LM7805
R250
RO4350
H-33288-6
240-2520-2-ND
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Thermally-enhanced
|
Original
|
PTFA092201E
PTFA092201F
220-watt,
H-30260-2
H-31260-2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced
|
Original
|
PTFA092201E
PTFA092201F
PTFA092201E
PTFA092201F
220-watt,
H-36260-2
H-37260-2
|
PDF
|
100 HFK
Abstract: HFK CAPACITOR 100uf HFK 100 HFK capacitor ELNA capacitor 100 uf 50v diode c723 LM7805 05 330 hfk 8 LM7805 PTFA092211EL
Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications
|
Original
|
PTFA092211EL
PTFA092211FL
PTFA092211EL
PTFA092211FL
220-watt,
H-33288-2
H-34288-2
100 HFK
HFK CAPACITOR
100uf HFK
100 HFK capacitor
ELNA capacitor 100 uf 50v
diode c723
LM7805 05
330 hfk 8
LM7805
|
PDF
|
7909 regulator
Abstract: PTFA092213ELV4
Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier
|
Original
|
PTFA092213EL
PTFA092213FL
PTFA092213FL
220-watt,
H-33288-6
H-34288-4/2
7909 regulator
PTFA092213ELV4
|
PDF
|
PTFB092707FH
Abstract: No abstract text available
Text: PTFB092707FH advance specification Description advance specification Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 925 – 960 MHz Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance
|
Original
|
PTFB092707FH
PTFB092707FH
220-watt
|
PDF
|
GS 9425
Abstract: PTFA092211EL PTFA092211FL package tray design dwg
Text: Preliminary PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications
|
Original
|
PTFA092211EL
PTFA092211FL
PTFA092211EL
PTFA092211FL
220-watt,
PTFA092211FL*
H-34288-2
GS 9425
package tray design dwg
|
PDF
|
Southco 52-99-215
Abstract: 52-99-215 Delta Electronics dpsN 130 DPSN Southco dpsn-220ab DPSN 96 DPSN-220AB A EN61000-4-2 EN61000-4-5
Text: w w w. d e l t a w w. c o m DPSN-220AB A Series FEATURES Efficiency: >75%@full load, min. line Universal input Redundant Power Protection: Latched mode OVP, OCP & OTP Harmonic: EN61000-3-2 class D PF>0.97@full load, nominal line 3 Power Density: 4 W/in Alarm Signals:
|
Original
|
DPSN-220AB
EN61000-3-2
Southco 52-99-215
52-99-215
Delta Electronics dpsN 130
DPSN
Southco
DPSN 96
DPSN-220AB A
EN61000-4-2
EN61000-4-5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power ampliier
|
Original
|
PTFA092213EL
PTFA092213FL
PTFA092213EL
PTFA092213FL
220-watt,
H-34288-4/2
|
PDF
|
MENB1030
Abstract: No abstract text available
Text: External Power Supply International Efficiency Level V ErP Phase 2 By Maggie Nadjmi March 16th 2011 Background More than one billion external power supplies are sold worldwide each year Majority of these supplies are used to convert the high voltage AC to the low
|
Original
|
100MWatt
75Watts)
MW156
110Watts)
MENB1030
|
PDF
|
elna 50v
Abstract: BCP56 LM7805 PTFA092201E PTFA092201F RO4350
Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced
|
Original
|
PTFA092201E
PTFA092201F
PTFA092201E
PTFA092201F
220-watt,
H-36260-2
H-37260-2
elna 50v
BCP56
LM7805
RO4350
|
PDF
|