Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

MBRF1535CT

Contextual Info: MBRF1535CT - MBRF15150CT CREAT BY ART 15.0 AMPS. Isolated Schottky Barrier Rectifiers ITO-220AB Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

Contextual Info: Pr el im FRF1601G THRU FRF1607G in ar y Isolation 16.0 AMPS. Glass Passivated Fast Recovery Rectifiers Voltage Range 50 to 1000 Volts Current 16.0 Amperes Preliminary ITO-220AB Features a a a a .185 4.7 MAX Low forward voltage drop High current capability

Contextual Info: SF801G - SF808G CREAT BY ART Pb 8.0AMPS. Glass Passivated Super Fast Rectifiers TO-220AB RoHS COMPLIANCE Features — High efficiency, low VF — High current capavility — High reliability — High surge current capability — Low power loss. — For use in low voltage, high frequency inventor,

SR1020 GREEN

Contextual Info: SR1020 - SR10150 CREAT BY ART 10 AMPS. Schottky Barrier Rectifiers TO-220AB Features Low power loss, High efficiency High current capability, Low VF High reliability High surge current capability Epitaxial construction Guard-ring for transient protection For use in low voltage, high frequency

Contextual Info: UGF1606G CREAT BY ART Pb 16.0AMPS. Isolated Glass Passivated Super Fast Rectifiers ITO-220AB RoHS COMPLIANCE Features — High efficiency, low VF — High current capability — High reliability — High surge current capability — Low power loss — For use in low voltage, high frequency inverter,

Contextual Info: MBR30H100CT CREAT BY ART Pb 30.0AMPS. Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features — Low power loss, high efficiency — High current capability, low forward voltage drop — Plastic material used carriers Underwriters Laboratory Classification 94V-0

1630 sr

Contextual Info: SR1620 - SR16150 CREAT BY ART 16.0AMPS. Schottky Barrier Rectifiers TO-220AB Pb RoHS COMPLIANCE Features — Low power loss, high efficiency — — High current capability, low VF High reliabbility — High surge current capability — Epitaxial construction —

30L60CT

Abstract: 30L100CT 30l45ct
Contextual Info: MBR30L45CT - MBR30L100CT creat by art Pb 30.0Amps Low VF Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features — Low power loss, high efficiency — High current capability, low forward voltage drop — Plastic material used carriers Underwriters Laboratory Classification 94V-0

SFF1005GA

Abstract: SFF1006GA SFF1005 SFF1005G
Contextual Info: SFF1001GA - SFF1008GA CREAT BY ART 10.0AMPS Isolated Glass Passivated Super Fast Rectifier ITO-220AB Pb RoHS COMPLIANCE Features — High efficiency, low VF — High current capability — High reliability — High surge current capability — Low power loss —

BT138-800G

Contextual Info: BT138-800G 4Q Triac 27 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 TO-220AB plastic package intended for use in applications requiring high bidirectional transient and blocking voltage

3060ct

Abstract: 30150CT 30100C 30100CT MBRF3090CT-30100CT
Contextual Info: MBRF3035CT - MBRF30150CT CREAT BY ART 30.0 AMPS. Isolated Schottky Barrier Rectifiers ITO-220AB Pb RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

Contextual Info: SUP90N04-3m3P Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 VDS (V) 40 Qg (Typ.) 87 TO-220AB • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Part Marking Information

Abstract: P119X
Contextual Info: Part Marking Information Vishay Semiconductors TO-220AB FULL-PAK Example: xxxxxxxFP V P119X A C Assembly lot code Document Number: 95069 Revision: 08-Mar-11 Part number FP = FULL-PAK This is a xxxxxxxFP with assembly lot code AC, assembled on WW 19, 2001 in the assembly line “X”

1620ct

Abstract: nana E326243 E-326243 MURF1620CT
Contextual Info: MURF1620CT - MURF1660CT CREAT BY ART 16.0AMPS. Isolated Switchmode Power Rectifiers ITO-220AB Pb RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Ultrafast 35 and 60 Nanasecond Recovery times — 175℃ operating Junction Temperature — Popular ITO-220AB Package

"Power Diode"

Contextual Info: TO -22 0A B BYV410-600 Dual enhanced ultrafast power diode Rev. 2 — 5 August 2011 Product data sheet 1. Product profile 1.1 General description Dual enhanced ultrafast power diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits  High thermal cycling performance

BYQ28EF-200

Contextual Info: BYQ28E F,B -100 thru BYQ28E(F,B)-200, UG(F,B)10BCT Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AB TO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency

BT138-600

Contextual Info: BT138-600 4Q Triac 2 August 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 TO-220AB plastic package intended for use in applications requiring high bidirectional transient and blocking voltage

IRF9Z34

Abstract: IRF9Z34PBF
Contextual Info: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated

VS-30CTQ060

Abstract: vs30ctq060
Contextual Info: VS-30CTQ0.PbF Series, VS-30CTQ0.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 15 A FEATURES Base 2 common cathode • 150 °C TJ operation • Very low forward voltage drop • High frequency operation Anode TO-220AB • High

MBR1550CT

Abstract: Diode MBR 1045 MBR1535
Contextual Info: MBR F,B 1535CT thru MBR(F,B)1560CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection ITO-220AB TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

12CTQ040PBF

Abstract: 12ctq045pbf 12ctq045
Contextual Info: VS-12CTQ.PbF Series, VS-12CTQ.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 2 • 175 °C TJ operation • Center tap TO-220 package • Low forward voltage drop • High frequency operation TO-220AB

mbr304

Contextual Info: New Product MBR F,B 3035CT & MBR(F,B)3045CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

SUB70N06-14-E3

Contextual Info: SUP/SUB70N06-14 Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 60 0.014 70a Pb-free Available RoHS* COMPLIANT TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N06-14 Top View N-Channel MOSFET