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    21T1A Search Results

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    21T1A Price and Stock

    Samtec Inc SD-121-T-1A

    .100" DOUBLE ROW SCREW MACHINE S
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    DigiKey SD-121-T-1A Tube 10
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    Mouser Electronics SD-121-T-1A
    • 1 $10.61
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    Newark SD-121-T-1A Bulk 1
    • 1 $11.95
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    Master Electronics SD-121-T-1A
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    Sager SD-121-T-1A 1
    • 1 $10.61
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    Samtec Inc SS-121-T-1A

    SOCKET STRIPS
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    DigiKey SS-121-T-1A Bulk 1
    • 1 $5.58
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    Mouser Electronics SS-121-T-1A
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    Newark SS-121-T-1A Bulk 1
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    Master Electronics SS-121-T-1A
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    Sager SS-121-T-1A 1
    • 1 $5.58
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    Samtec Inc SS-121-T-1-A

    Conn Socket Strip SKT 21 POS 2.54mm Solder ST Thru-Hole - Bulk (Alt: SS-121-T-1A)
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    Avnet Americas SS-121-T-1-A Bulk 1
    • 1 $5.58
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    Samtec Inc SD-121-T-1-A

    Conn Socket Strip SKT 42 POS 2.54mm Solder ST Thru-Hole Tube - Rail/Tube (Alt: SD-121-T-1A)
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    Avnet Americas SD-121-T-1-A Tube 1
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    RS Pro 26090003 (ALTERNATE: 2141000621 (T1 ADAPTER))

    Quick Connect Adapter 0.250" Socket to 0.187" Plug (F2/T2 to F1/T1 Adapter) | RS PRO 26090003
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    RS 26090003 (ALTERNATE: 2141000621 (T1 ADAPTER)) Bulk 37 10 Weeks 2
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    21T1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SSM3J46CTB 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅥ SSM3J46CTB ○ パワーマネージメントスイッチ 単位: mm 0.8±0.05 1.5 V 駆動です オン抵抗が低い Ron = 250 mΩ (max) (@VGS = -1.5 V) Ron = 178 mΩ (max) (@VGS = -1.8 V)


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    PDF SSM3J46CTB

    Untitled

    Abstract: No abstract text available
    Text: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS VI SSM3J46CTB ○ Power Management Switch Applications • • Unit: mm 1.5 V drive Low ON-resistance: RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V)


    Original
    PDF SSM3J46CTB

    Untitled

    Abstract: No abstract text available
    Text: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS VI SSM3J46CTB ○ Power Management Switch Applications • • Unit: mm 1.5 V drive Low ON-resistance:RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V)


    Original
    PDF SSM3J46CTB

    21T1A

    Abstract: No abstract text available
    Text: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS VI SSM3J46CTB ○ Power Management Switch Applications • • Unit: mm 1.5 V drive Low ON-resistance:RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V)


    Original
    PDF SSM3J46CTB 21T1A

    Untitled

    Abstract: No abstract text available
    Text: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS VI SSM3J46CTB Power Management Switch Applications Unit: mm • • 1.5 V drive Low ON-resistance:RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V)


    Original
    PDF SSM3J46CTB

    Untitled

    Abstract: No abstract text available
    Text: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM3J46CTB ○ Power Management Switch Applications 0.8±0.05 1.5 V drive Low ON-resistance:Ron = 250 mΩ (max) (@VGS = -1.5 V) Ron = 178 mΩ (max) (@VGS = -1.8 V) Ron = 133 mΩ (max) (@VGS = -2.5 V)


    Original
    PDF SSM3J46CTB

    SSM3J46CTB

    Abstract: No abstract text available
    Text: SSM3J46CTB 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅥ SSM3J46CTB ○ パワーマネージメントスイッチ 単位: mm • • 1.5 V 駆動です オン抵抗が低い RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V)


    Original
    PDF SSM3J46CTB SSM3J46CTB