marking 133I
Abstract: 1N3064 40HA20
Text: r M IL -M -3 8 5 1 0 /1 E S U P Ï’IsEDHi'È HIL-M-38510/1B 23 December 1971 MIL-M -0038510/lD USAF 1 December 1975 M ILITARY S PEC IFIC A T IO N MICROCIRCUITS, D IG IT A L , T T L , NAND GATES, MONOLITHIC S IL IC O N T h i s s p e c i f i c a t i o n I s ap p ro ve d f o r use by a l l D e p a r t
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MIL-M-38510/1E
MIL-M-38510/16
MIL-M-0038510/1D
MIL-M-38510,
1982-50S-022/3802
marking 133I
1N3064
40HA20
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HF 13003
Abstract: SR 13003 SR 13003 b H 13003 mj 13003 Z8 ITT 330B Y521 3r510
Text: MIL-M-3R510/330B 5 A P R I L 1983 ^ U P riTSED 1HTS-MIL-M-3R510/330A 6 D e c em be r 1982 MILITARY MICROCIRCUITS, SPECIFICATION DIGITAL, A D V AN CE D SC HOT TK Y T T L , NA ND M O N O L I T H I C SILICON GATES, T h i s s p e c i f i c a t i o n 1s a p p r o v e d fo r u s e by all D e p a r t
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MIL-M-3R510/330B
MIL-M-3R510/330A
MIt-M-38510,
5962-0B65)
HF 13003
SR 13003
SR 13003 b
H 13003
mj 13003
Z8 ITT
330B
Y521
3r510
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMICN/A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE
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M0N01ITHIC
-miA09n
5962-E984-2
70901CX
SNJ54F36J
SNJ54F36W
88709012X
SNJ54F36FK
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DIODE smd marking v1H
Abstract: 54C02 5962-87612022X 54AC02 54AC11002 5962-8761201DX SNJ54AC11002FK
Text: REVISIONS LTR A DATE YR-MO-DA DESCRIPTION Add device type 02. Add vendor CAGE 01295 for device type 02, case outlines E, F, and 2. Technical changes to 1.4, table I. Change drawing CAGE code to 67268. Editorial changes throughout. APPROVED 1989 AUG 11 CURRENT CAGE CODE 67268
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5962-002FK
549-KM
DIODE smd marking v1H
54C02
5962-87612022X
54AC02
54AC11002
5962-8761201DX
SNJ54AC11002FK
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI - - - Í D G T iT L O G I C } "il D È I ^24^027 DG12S71 □ ¥ MI T S UB I S H I — ASTTLs M 74AS1808P 91D 12 271 t ò ^ pa's<re 7~ ~93-/S D HEX 2-1NPUT AND DRIVER DESCRIPTION The M74AS1808P is a semiconductor integrated circuit consisting of six 2-input positive-logic AND buffer gates,
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DG12S71
74AS1808P
93-/S
M74AS1808P
DD1S17J
20-PIN
24P4D
24-PIN
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54LS26
Abstract: No abstract text available
Text: MIL-M-38510/321B 12 A u q u s t 1983 SUPERSEDING <7 M I L - M - 3 8 5 1 0 / 3 2 1 A Î USAF 1 M arch 1979 MILITARY MICROCIRCUITS, DIGITAL, LOW-POWER, SCHOTTKY T T L , BUFFERS/DRIVERS, OPEN COLLECTOR OUTPUT, HIGH VOLTAGE, MONOLITHIC SILICON T h i s s p e c i f i c a t i o n is
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MIL-M-38510/321B
MIL-M-38510/321AÃ
54LS26
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13003 application notes
Abstract: 3L0E diode X 13003 1N3064 1AMI
Text: M I L - M - 3 8 5 1 0 / 3 IO C 18 NOVEMBER 1987 SUPERSEDING MIL-M-38510/310B 28 April 1982 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON This specification 1s.approved for use by all Depart ments
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IL-M-38510/3IOC
MIL-M-38510/310B
MIL-M-38510,
50S-033/920I3
13003 application notes
3L0E diode
X 13003
1N3064
1AMI
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T-13007
Abstract: in 3003 TRANSISTOR SE 13007 transistor E 13009 13009 TRANSISTOR equivalent E 13007 T 13007 1N4150 DT 3007 B
Text: M I L - M - 3 8 5 1 0 / 3 1 A IQU AL IF I C A T I O N I 9 August. 1Q83 IR E Q U I R E M E N T S I SUPERSEDING | REMOVED I MIL-M-38510/31 -14 M a r c h 1 9 7 5
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MIL-M-38510/31A
MIL-M-38510/31
MIL-M-38510.
substitill15Â
MIL-M-38510
L-M-38510/31A
T-13007
in 3003 TRANSISTOR
SE 13007
transistor E 13009
13009 TRANSISTOR equivalent
E 13007
T 13007
1N4150
DT 3007 B
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ll-BT diode
Abstract: 30M30
Text: MIL-M-38510/303C 12 NOVEMBER 1987 SUPERSEDING MIL-M-38510/303B 9 August 1983 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, LOVI-POWER SCHOTTKY TTL, NOR GATES, MONOLITHIC SILICON This specification Is approved for use by all Depart ments and Agencies of the Department of Defense.
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MIL-M-38510/303C
MIL-M-38510/303B
MIL-M-38510.
ll-BT diode
30M30
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR B OÄTE YR-MO-QA DESCRIPTION Add case o u tlin e "F" to device type 01. Add vendor CAGE 18324 to case o u tlin e s E, F, and 2. E d ito r ia l changes th roughout. Change c u rre n t CAGE code. APPROVED 88 DEC. 08 CURRENT CAGE CODE 67268 REV
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W7-74Â
-i2W409ii
5962-E993-3
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25S09
Abstract: No abstract text available
Text: ± RE V IS IO N S LTR D A TE D E S C R IP T IO N APPROVED R EV PAGE REV STATUS REV OF PAGES PAGES 1 2 3 4 6 5 7 8 9 MILITARY DRAWING Defens« Electronics Supply Center Dayton, Ohio 10 CHECKED. This drawing is available for use by all Departments and A gencies of the
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5962-E189
5962-8672801EX
AM25S09/BEA
5962-8672801FX
AM25S09/BFA
5962-867/A
25S09
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E412 D
Abstract: No abstract text available
Text: A D A TE D E S C R IP T IO N LT R B REVISIONS Add case outline F-2 to vendor , d?nactivaüe device type 01AX for nev. desian. Convert to m ilitary drawing format. Delete subgroups 10- and 11 from group C periodic inspections. Editorial changes throughout.
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10-and
5962-E412
7703601AX
7703601CX
MM54C08J/883
770360IDX
MM54C08W/883
O12835
E412 D
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LM356N
Abstract: MS218L pc4570HA ic equivalent TL072CP M521BP bai5218 4558 cross reference tcl27l2 AN6554 "cross reference" PC458G
Text: Es3 OPERATIONAL AMPLIFIER CROSS REFERENCE Bipolar N JR C Functions Single Supply Type Type No. N -S T* I Equivalent Products by Other Companies Mitsubishi N E C Hitachi Toshiba M5224P NJM29Q2M NJM3403AD LM2902NS MC3403N NJM3403AM MC3403NS NJM324D LM324N M5224P
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NJM29Q2M
NJM3403AD
NJM3403AM
NJM324D
NJM324M
NJM2904D
NJM2904M
NJM2904L
NJM3404AD
NJM3404AM
LM356N
MS218L
pc4570HA
ic equivalent TL072CP
M521BP
bai5218
4558 cross reference
tcl27l2
AN6554 "cross reference"
PC458G
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am2022
Abstract: am22 full adder circuit using xor and nand gates AM2031 AM2024 AM2051 t950 half adder circuit using nor and nand gates ax253 AM290
Text: Am 3525 Mask-Programmable Gate Array With ECL RAM PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 internal cells - Up to 135 l/O s 1152 bits of ECL RAM 1K with byte-wide parity - Worst case T a a (access time) = 5.5 ns High-performance, low-power ECL gates
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Am3525
Am3525
TC002800
WF010980
7321A
D7322A
am2022
am22
full adder circuit using xor and nand gates
AM2031
AM2024
AM2051
t950
half adder circuit using nor and nand gates
ax253
AM290
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dupont 5504
Abstract: b82m IR LFN ANI 1015 the lord of the dance UMt1-1 mt relay s3 pj 88 iv
Text: 1 MIL-M-38510/170B 30 AdM I 1984 w m rrm rs -MIL-M-38510/170A 8 August 1979 MILITARY SPECIFICATION MICROCIRCUITS. D IG ITA L, CMOS. ANO GATES. MONOLITHIC SILIC O N , PO SITIVE LOGIC T h is s p e c if ic a t io n Is approved fo r use by a l l D e p a rt
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MIL-M-38510/170B
MIL-M-38510/170A
MIL-M-38510.
dupont 5504
b82m
IR LFN
ANI 1015
the lord of the dance
UMt1-1
mt relay s3
pj 88 iv
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8761401CX
Abstract: M38510/75201BCX 54AC32 5962-8761401DX 54AC32LM 5962-8761401
Text: DESC FORM 193 SEP 87 D ISTR IB U TIO N STA TEM EN T A. „ u s GOWRNMINT MINTINGOFfICE: 1987—7«.m/40911 5962-E864 Approved lor public release; distribution Is unlim ited. This Material Copyrighted By Its Respective Manufacturer 1. SCOPE 1 .1 Scope. T h is drawing d e sc rib e s d evice requirem ents f o r c l a s s B m ic r o c ir c u it s In accordance
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5962-8761401CX
54AC32DMQB
M38510/75201BCX
5962-8761401DX
54AC32FMQB
M38510/75201BDX
5962-87614012X
54AC32LMQB
M38510/75201B2X
8761401CX
54AC32
54AC32LM
5962-8761401
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74L47
Abstract: a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600
Text: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS
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CC-401
10072-41-US
54S/74S
74L47
a1208 transistor
74L03
sn76131
MC526L
eh12a
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
tg321
PJ 909
inverter LS600
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E1039
Abstract: SNJ54AS1032AJ 5962-E1039
Text: REVISIONS LTR DATE YR-MO-OA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV 1 SHEET 2 3 PftWCN/A PREPARED BY STANDARDIZED MILITARY DRAWING CHECKED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENT3 AND AGENCIES OF THE DEPARTMENT OF DEFENSE
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5962-E
5962-8873001CX
SNJ54AS1032AJ
5962-8873001DX
SNJ54AS1032AW
5962-88730012X
SNJ54AS1032AFK
E1039
5962-E1039
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12 pin glcd
Abstract: smd 2a y 3c smd marking 9z 2Y smd 3004 4077B GT 1081 IC 3004 smd marking 9T dupont 5504
Text: MIL-M-38510/172B 30 April 1984 w m n m r c -MIL-M-38510/172A 29 O ctober 1979 MILITARY SPECIFICATION MICROCIRCUITS, D IG ITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILIC O N , PO SITIVE LOGIC T h is s p e c if ic a t io n I s approved f o r use by a l l D e p a rt
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MIL-M-38510/172B
MIL-M-38510/172A
MIL-M-38510.
12 pin glcd
smd 2a y 3c
smd marking 9z
2Y smd
3004
4077B
GT 1081
IC 3004
smd marking 9T
dupont 5504
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13003 HJ
Abstract: KRC 118 1601 HJ 13003 avr 90s hf 13005 KI E 13003 IC MARKING 2ay j607 13005 s HF 13003
Text: MI L-M-38,510/530 30 April 1984 supe ksediws -MIL-M-38510/53C 23 May 1980 MILITARY SPECIFICATIONMICROCIRCUITS, DIGITAL, CMOS,1 COMPLEMENTARY PAIR PLUS INVERTER, ANO-OR-SELECT EXCLUSIVE OR"GATES, EXPANDABLE 8-INPUT GAtE, MONOLITHIC SILICON This specification 1s approved for use by all Depart
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L-M-38
MIL-M-38510/53C
MIL-M-38510,
A3756
13003 HJ
KRC 118 1601
HJ 13003
avr 90s
hf 13005
KI E 13003
IC MARKING 2ay
j607
13005 s
HF 13003
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lm38510
Abstract: IC HE 4011 13005 2 ANI 1015 ha 13441 HC 4011 logic gate TT 46 N 16 LOF STD-183
Text: MIL-M-38510/5C 20 MAY 1985 SUPERSETS MI L-M-0038510/5BC19 1 December 1975 and MIL-M-38510/5A 6 December 1971 See 6.7) i MI L I T A R Y SPECIFICATION M I CR OC I R C U I T S , DIGITAL, AMD-OR-INVERT GATES, TTL, MONOLITHIC S I L I C O N T h i s s p e c i f i c a t i o n 1s a p p r o v e d f o r use by a l l D e p a r t
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MIL-M-38510/5C
MII-M-0038510/5BC19)
MIL-M-38510/5A
MIL-M-38510.
KIL-M-38510/5A
L-M-38510/5C
lm38510
IC HE 4011
13005 2
ANI 1015
ha 13441
HC 4011 logic gate
TT 46 N 16 LOF
STD-183
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me 8549
Abstract: E1237 smd diode D3B 54AC86
Text: c REVISIONS LTR APPROVED DATE YR-MO-M DESCRIPTION i REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMICN/A A M S C N /A 12 PREPARED B Y DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE B Y A L L DEPARTMENTS
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w40911
5962-E1237
5962-8955001CX
54AC86DMQB
5962-8955001DX
54AC86FMQB
5962-89550012X
54AC86LMQB
SW-904
me 8549
E1237
smd diode D3B
54AC86
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SN76670
Abstract: sn76131 SNF10 The Integrated Circuits Catalog for Design Engineers SN76005 inverter welder schematic inverter LS600 sn76630 SN76660 sn76013
Text: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS
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CC-401
10072-41-US
54S/74S
54H/74H
54L/74L
TIH101
SN76670
sn76131
SNF10
The Integrated Circuits Catalog for Design Engineers
SN76005
inverter welder schematic
inverter LS600
sn76630
SN76660
sn76013
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GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
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