mil-std-202 106
Abstract: MIL-STD pcb connector T-flash
Text: Product Specification（製品規格） 108108-78224 T-FLASH CONNECTOR T-FLASH コネクタ 21FEB05 Rev.A 1. 適用範囲 Scope : 1.1 内容 1.1 Contents 本規格は T-FLASH コネクタの製品性能試験方法、品質 This specification covers the requirements for product
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21FEB05
mil-std-202 106
MIL-STD pcb connector
T-flash
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Untitled
Abstract: No abstract text available
Text: 593D Vishay Sprague Solid Tantalum Chip Capacitors Tantamount Commercial, Surface Mount for Switch Mode Power Supplies and Converters FEATURES • • • • PERFORMANCE/ELECTRICAL CHARACTERISTICS Terminations: 100% Tin, Standard. SnPb available. Lead Pb -free available
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535BAAE
QC300801
US0001.
330mm]
178mm]
EIA-481-1.
21-Feb-05
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71079
Abstract: mosfet low vgs si1555dl-t1-e3 Si1555DL Si1555DL-T1 A.4 SOT363
Text: Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY N-Channel P-Channel 20 −8 rDS on (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 0.600 @ VGS = −4.5 V −0.60 0.850 @ VGS = −2.5 V −0.50 1.200 @ VGS = −1.8 V
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Si1555DL
OT-363
SC-70
Si1555DL-T1
Si1555DL-T1--E3
08-Apr-05
71079
mosfet low vgs
si1555dl-t1-e3
A.4 SOT363
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SiP12501
Abstract: MBR0520 MLP33-6
Text: SiP12501 New Product Vishay Siliconix Boost Converter for Single/Double AA Cell or NiMH Battery for White LED Applications FEATURES D Voltage Mode Control with Internal Frequency Compensation D 0.65-V to 3.3-V Input Voltage Range D Low Startup Voltage: 0.65 V
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SiP12501
600-kHz
MLP33-6
18-Jul-08
MBR0520
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SiP41105
Abstract: SiP41105DB SiP41105DQP-T1 TSSOP-16
Text: SiP41105 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion FEATURES D D D D D D D D D APPLICATIONS 5-V Gate Drive Undervoltage Lockout Internal Bootstrap Diode Adaptive Shoot-Through Protection Syncronous MOSFET Enable Shutdown Control
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SiP41105
18-Jul-08
SiP41105DB
SiP41105DQP-T1
TSSOP-16
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Si2327
Abstract: Si2327DS 50256r
Text: SPICE Device Model Si2327DS Vishay Siliconix P-Channel 200-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2327DS
18-Jul-08
Si2327
50256r
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Si7892BDP
Abstract: No abstract text available
Text: SPICE Device Model Si7892BDP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7892BDP
18-Jul-08
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SiP41105
Abstract: SiP41105DB SiP41105DQP-T1 TSSOP-16 72719
Text: SiP41105 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion FEATURES D D D D D D D D D APPLICATIONS 5-V Gate Drive Undervoltage Lockout Internal Bootstrap Diode Adaptive Shoot-Through Protection Syncronous MOSFET Enable Shutdown Control
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SiP41105
08-Apr-05
SiP41105DB
SiP41105DQP-T1
TSSOP-16
72719
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2N7002K
Abstract: No abstract text available
Text: SPICE Device Model 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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2N7002K
S-50261Rev.
21-Feb-05
2N7002K
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marking dt2
Abstract: PD driver Si4724CY S-50244
Text: Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D 0- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30-V MOSFETs D D D D High Side: 0.0375 W @ VDD = 4.5 V Low Side: 0.029 W @ VDD = 4.5 V
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Si4724CY
S-50244--Rev.
21-Feb-05
marking dt2
PD driver
S-50244
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1N40
Abstract: No abstract text available
Text: 1N4001G THRU 1N4007G GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURE DO – 41\DO – 204AL Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed
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1N4001G
1N4007G
/10sec/0
41\DO
204AL
UL-94
21-Feb-05
21-Feb-05
1N40
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SiP12401
Abstract: MBR0520 MLP33-6 Si2302DS
Text: SiP12401 Vishay Siliconix New Product Boost Controller For Double AA Cell or Li-Ion Battery For White LED Application FEATURES APPLICATIONS D Voltage Mode Control with Internal Frequency Compensation D 1.8-V to 5.0-V Input Voltage Range D PWM Control with 600-kHz Fixed Switching Frequency
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SiP12401
600-kHz
MLP33-6
S-50204--Rev.
21-Feb-05
MBR0520
Si2302DS
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Untitled
Abstract: No abstract text available
Text: SiP41103 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion FEATURES D D D D D D D D APPLICATIONS 5-V Gate Drive Undervoltage Lockout Internal Bootstrap Diode Adaptive Shoot-Through Protection Synchronous MOSFET Disable Adjustable Highside Propagation Delay
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SiP41103
S-50265--Rev.
21-Feb-05
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S50242
Abstract: S-50242
Text: SUM110N06-3m9H New Product Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) Qg (Typ) 60 0.0039 @ VGS = 10 V 110 a 200 D D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature New Package with Low Thermal Resistance
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SUM110N06-3m9H
O-263
SUM110N06-3m9H--E3
08-Apr-05
S50242
S-50242
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Untitled
Abstract: No abstract text available
Text: Si7941DP Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.027 @ VGS = −10 V −9.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.039 @ VGS = −4.5 V −7.5
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Si7941DP
07-mm
Si7941DP-T1
Si7941DP-T1--E3
08-Apr-05
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Si4724CY
Abstract: marking dt2
Text: Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D 0- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30-V MOSFETs D D D D High Side: 0.0375 W @ VDD = 4.5 V Low Side: 0.029 W @ VDD = 4.5 V
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Si4724CY
08-Apr-05
marking dt2
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SUD23N06-31L
Abstract: 72145
Text: SUD23N06-31L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.031 @ VGS = 10 V 23 0.045 @ VGS = 4.5 V 19.5 VDS (V) 60 D TrenchFETr Power MOSFET D 175_C Junction Temperature Pb-free Available APPLICATIONS
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SUD23N06-31L
O-252
SUD23N06-31L--E3
S-50282--Rev.
21-Feb-05
SUD23N06-31L
72145
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SUD50N06-09L-E3
Abstract: 72004 SUD50N06-09L
Text: SUD50N06-09L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY (A)a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0093 @ VGS = 10 V 50 APPLICATIONS 0.0122 @ VGS = 4.5 V 50 D Automotive − ABS − Motor Drives
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SUD50N06-09L
O-252
SUD50N06-09L--E3
S-50282--Rev.
21-Feb-05
SUD50N06-09L-E3
72004
SUD50N06-09L
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S-50244
Abstract: S50244 Si4724CY marking dt2 s50244rev
Text: Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D 0- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30-V MOSFETs D D D D High Side: 0.0375 W @ VDD = 4.5 V Low Side: 0.029 W @ VDD = 4.5 V
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Si4724CY
18-Jul-08
S-50244
S50244
marking dt2
s50244rev
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Untitled
Abstract: No abstract text available
Text: Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY N-Channel P-Channel 20 −8 rDS on (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 0.600 @ VGS = −4.5 V −0.60 0.850 @ VGS = −2.5 V −0.50 1.200 @ VGS = −1.8 V
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Si1555DL
OT-363
SC-70
Si1555DL-T1
Si1555DL-T1--E3
S-50245--Rev.
21-Feb-05
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Si1330EDL
Abstract: No abstract text available
Text: SPICE Device Model Si1330EDL Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1330EDL
18-Jul-08
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SUD40N06-25L-E3
Abstract: SUD40N06-25L
Text: SUD40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A)a 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested
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SUD40N06-25L
O-252
SUD40N06-25L--E3
18-Jul-08
SUD40N06-25L-E3
SUD40N06-25L
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC TE CONNECTIVITY REVISIONS DIST ES ALL RIGHTS RESERVED. 1 00 P LTR DIM L # .010 DESCRIPTION DATE APVD D5 REV PER ECR-12-018919 31OCT2012 ML SZ D6 UPDATED 12NOV2012 ML
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31OCT2012
12NOV2012
ECR-12-018919
ECR-13-006264
15APR2013
44PLC
21FEB05
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Untitled
Abstract: No abstract text available
Text: T H IS DRAWING IS U N P U B LIS H E D . RELEASED FDR PUBLICATIO N A L L RIGHTS COPYRIGHT LOC RESERVED. BY TYCO ELECTRONICS CORPORATION. CONNECTOR CONTACT ASSEMBLY EXEMPLARY REVISIONS D IS T H D IM E N S IO N S LTR DE SC R IPTIO N DATE EH10 - 0 2 4 7 - 0 5
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22FEB05
21FEB05
5222ARâ
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