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    21EL2 Price and Stock

    Knowles Corporation EL-29924-C36

    Microphones 4.0 X 5.59 X 2.28MM -53 SENS 9S/12S PORT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EL-29924-C36
    • 1 $26.55
    • 10 $21.64
    • 100 $18.31
    • 1000 $18.31
    • 10000 $18.31
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    Knowles Corporation EL-23083-C37

    Microphones 4.0 X 5.59 X 2.28MM -52 SEN 12S/0JP PORT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EL-23083-C37
    • 1 $28.36
    • 10 $23.9
    • 100 $19.77
    • 1000 $19.77
    • 10000 $19.77
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    Knowles Corporation EL-23077-C36

    Microphones 4.0 X 5.59 X 2.28MM -52 SENS, 3S/9S PORT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EL-23077-C36
    • 1 $28.36
    • 10 $23.9
    • 100 $19.77
    • 1000 $19.77
    • 10000 $19.77
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    Knowles Corporation EL-29851-C37

    Microphones 4.0 X 5.59 X 2.28MM -59 SENS 0KP/3S PORT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EL-29851-C37
    • 1 -
    • 10 -
    • 100 $18.31
    • 1000 $18.31
    • 10000 $18.31
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    Knowles Corporation EL-23083-000

    Microphones 4.0 X 5.59 X 2.28MM -52 SEN 12S/0JP PORT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EL-23083-000
    • 1 -
    • 10 -
    • 100 $18.31
    • 1000 $18.31
    • 10000 $18.31
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    21EL2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R | | [\ JJQ Q y P V H F -U H F BAND LOW NOISE AM PLIFIER APPLICATIO NS. • • U n it in mm Including Two Devices in SM6 Super Mini Type with 6Leads Low Noise Figure, High Gain. NF = l.ld B , |S2i e|2 = 13dB (f= lG H z)


    OCR Scan     		PDF

    sot marking code ZS

    Abstract: transistor bf 290
    Text: SIEMENS BF 770A NPN S ilicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators it m 1= B h Q62702-F1124 O LSs CO BF 770A ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin C onfiguration


    OCR Scan     		PDF OT-23 Q62702-F1124 21el2 IS2l/S12l sot marking code ZS transistor bf 290

    Untitled

    Abstract: No abstract text available
    Text: MÛi€Sr! Preliminary Specifications M an A M P com pany 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2 .0 0 SOT-23 Features • 1 5 dB N o ise F ig u ie a t 0 5 m A • 13 dB G a i l a t 1 G H z • 14 GH z fp • Low C o s tP la s tic P a ck a g e


    OCR Scan     		PDF MA4T6310 OT-23 4T6310

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3011 U nit in mm U H F -C BAND LOW NOISE AMPLIFIER APPLICATIONS. +as 2 .5 -C l3 High Gain |S21eP = 12dB Typ. Low Noise Figure NF = 2.3dB (Typ.), f= lG H z + CX25 1.3-ais High f'p -HO dd +I E£ fp = 6.5GHz M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3011 S21eP SC-59 21el2 --j50

    ESASE

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2 S Q 5 Q Q 7 TENTATIVE DATA U nit in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • Low Noise Figure, High Gain. N F = l.ld B , |S2 le |2 = 14dB f= lG H z M A X IM U M RATIN G S (T a = 25°C)


    OCR Scan     		PDF

    transistor HD marking

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 • ■ 'm ■ m tr r1AF ■ ■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C14F transistor HD marking

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C13F TOSHIBA TRANSISTOR TENTATIVE HN3 • ■ ■ r13F SILICON NPN EPITAXIAL PLANAR TYPE 'm m tr ■ w ■ V H F- U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C13F

    transistor marking c3n

    Abstract: No abstract text available
    Text: TOSHIBA HN3C14FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 A F 11 • ■ u 'm mm V H F- U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 U ltra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C14FU transistor marking c3n

    Flcl03

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U n it in mm V H F — UHF B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • Low Noise Figure, H igh G ain. N F = 1.8dB, |S 2lel2 = ?.5dB f = 2GHz M A X IM U M R A TIN G S (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF SC-70 2SC4325 -co03£ Flcl03

    2sc4857

    Abstract: 2SC4872 2sc487 2sc4856 2sc4859
    Text: I High-Performance Si Bipolartransistor fT > 5GHz Series Features High Gain, Low Noise G -III-NRP (G iga-lll-N oise Reduction Process) technology subm icron hyperfine process developed for high gain and low noise characteristics Low Power Dissipation High perform ance at low voltage and low current for low power dissipation


    OCR Scan     		PDF 2SC4853 250mm2 jS21e 2sc4857 2SC4872 2sc487 2sc4856 2sc4859

    2N2857 Model

    Abstract: 2N3570
    Text: n i> — • sb4E5m D D o m s a i mmc — Silicon Low Noise Bipolar Transistors MA42020 Series and 2N2857 Description n / A ~ c o r i s e m i c o n D t BRl n g t o n r - ’J i- « ' Nominal fT - 1.8 GHz Nominal Current Range - 1-5 mA Iq Max. - 50 mA Frequency > 1 0 MHz to 600 MHz


    OCR Scan     		PDF MA42020 2N2857 MA42021 MA42022 MA42023 MA42024 MA42025 MA42026 MA42027 2N2857 Model 2N3570

    transistor K 2056

    Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
    Text: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz


    OCR Scan     		PDF

    80500 TRANSISTOR

    Abstract: mje 2055 transistor lr 3303 KF 80500 LB 11911 0103 MA WJ 73 KF 80-500 NE68719 049E-9 transistor k 3562
    Text: NE687 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz 4 ! • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SO T 343 STYLE 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE)


    OCR Scan     		PDF NE687 NE687 NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 E68739-T1 NE68739R-T1 24-Hour 80500 TRANSISTOR mje 2055 transistor lr 3303 KF 80500 LB 11911 0103 MA WJ 73 KF 80-500 NE68719 049E-9 transistor k 3562

    TRANSISTOR 1443

    Abstract: marking f2 sot363 f2 sot-363 marking VU SOT363
    Text: SIEMENS BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation ijy io? vu» 6 54 Matting en SOT-363 pockog* {fo r «am pi« W ti c o rm p o ró t to pin 1 of tHric« 12 3 Olrtcttow of Unrnllng


    OCR Scan     		PDF OT-363 Q62702-F1645 OT-363 TRANSISTOR 1443 marking f2 sot363 f2 sot-363 marking VU SOT363

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C13FU T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 3 F II • ■ u 'm mm ■ mm ■ 'mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C13FU