SSM3K03TE
Abstract: No abstract text available
Text: SSM3K03TE 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K03TE ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 1.2±0.05 : Vth = 0.7~1.3 V スイッチング速度が速い。 • 小型パッケージで高密度実装に最適。
|
Original
|
SSM3K03TE
0022g
SSM3K03TE
|
PDF
|
SSM3J15TE
Abstract: No abstract text available
Text: SSM3J15TE 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J15TE ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 1.2±0.05 記 号 定 格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧 VDS −30 V ゲ ー ト ・ ソ ー ス 間 電 圧
|
Original
|
SSM3J15TE
SSM3J15TE
|
PDF
|
SSM3K15TE
Abstract: No abstract text available
Text: SSM3K15TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 : Ron = 4.0 Ω max (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Characteristics ２ Symbol
|
Original
|
SSM3K15TE
SSM3K15TE
|
PDF
|
SSM3K15TE
Abstract: No abstract text available
Text: SSM3K15TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 : Ron = 4.0 Ω max (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Characteristics ２ Symbol
|
Original
|
SSM3K15TE
SSM3K15TE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V)
|
Original
|
SSM3J16TE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3K15TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 : Ron = 4.0 Ω max (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Characteristics ２ Symbol
|
Original
|
SSM3K15TE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3J15TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15TE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)
|
Original
|
SSM3J15TE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3K15TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 : Ron = 4.0 Ω max (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Characteristics ２ Symbol
|
Original
|
SSM3K15TE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Characteristics １ ２ ３ 0.59±0.05
|
Original
|
SSM3K03TE
0022g
|
PDF
|
SSM3J16TE
Abstract: No abstract text available
Text: SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V)
|
Original
|
SSM3J16TE
SSM3J16TE
|
PDF
|
SSM3K16TE
Abstract: No abstract text available
Text: SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.0 Ω max (@VGS = 4 V)
|
Original
|
SSM3K16TE
SSM3K16TE
|
PDF
|
SSM3K03TE
Abstract: No abstract text available
Text: SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Characteristics Symbol Rating Unit
|
Original
|
SSM3K03TE
SSM3K03TE
|
PDF
|
SSM3J16TE
Abstract: No abstract text available
Text: SSM3J16TE 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J16TE 高速スイッチング用 アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 8 Ω 最大 (@VGS = −4 V)
|
Original
|
SSM3J16TE
4mmX25
SSM3J16TE
|
PDF
|
SSM3J15TE
Abstract: No abstract text available
Text: SSM3J15TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15TE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)
|
Original
|
SSM3J15TE
SSM3J15TE
|
PDF
|
|
|
SSM3K03TE
Abstract: No abstract text available
Text: SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Characteristics Symbol Rating Unit
|
Original
|
SSM3K03TE
SSM3K03TE
|
PDF
|
SSM3J16TE
Abstract: No abstract text available
Text: SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V)
|
Original
|
SSM3J16TE
SSM3J16TE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3J15TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15TE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)
|
Original
|
SSM3J15TE
|
PDF
|
SSM3K16TE
Abstract: 21B1B
Text: SSM3K16TE 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K16TE ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 3.0 Ω 最大 (@VGS = 4 V)
|
Original
|
SSM3K16TE
SSM3K16TE
21B1B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V)
|
Original
|
SSM3J16TE
|
PDF
|
SSM3K15TE
Abstract: No abstract text available
Text: SSM3K15TE 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K15TE ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 1.2±0.05 : Ron = 7.0 Ω 最大 (@VGS = 2.5 V) １ ２ ３ 記 号 定 格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧
|
Original
|
SSM3K15TE
SSM3K15TE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.0 Ω max (@VGS = 4 V)
|
Original
|
SSM3K16TE
|
PDF
|
SSM3K16TE
Abstract: No abstract text available
Text: SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Suitable for high-density mounting due to compact package · Low on resistance: Ron = 3.0 Ω max (@VGS = 4 V)
|
Original
|
SSM3K16TE
SSM3K16TE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Characteristics Symbol Rating Unit
|
Original
|
SSM3K03TE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.0 Ω max (@VGS = 4 V)
|
Original
|
SSM3K16TE
|
PDF
|
