Untitled
Abstract: No abstract text available
Text: F-213 Rev 21NOV13 S1SS–20–28–GF–03.00–D (1,00 mm) .03937" S1SS, S1SST SERIES MICRO CABLE ASSEMBLY SPECIFICATIONS Mates with: T1M For complete specifications see www.samtec.com?S1SS Insulator Material: Nylon Contact Material: Phosphor Bronze Plating:
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F-213
21NOV13)
VAC/353
sam27
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PDF
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Untitled
Abstract: No abstract text available
Text: VT2045C-M3, VIT2045C-M3, VT2045CHM3, VIT2045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
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VT2045C-M3,
VIT2045C-M3,
VT2045CHM3,
VIT2045CHM3
O-220AB
O-262AA
22-B106
AEC-Q101
VT2045C
VIT2045C
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PDF
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Untitled
Abstract: No abstract text available
Text: VT3045C-M3, VIT3045C-M3, VT3045CHM3, VIT3045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
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Original
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VT3045C-M3,
VIT3045C-M3,
VT3045CHM3,
VIT3045CHM3
O-220AB
O-262AA
22-B106
AEC-Q101
VT3045C
VIT3045C
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-SD203N/R Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes Stud Version 200 A FEATURES • High power fast recovery diode series • 1.0 s to 2.0 μs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics
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VS-SD203N/R
DO-205AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VLMPG33N1P2, VLMYG33P1Q2 www.vishay.com Vishay Semiconductors Power SMD LED PLCC-2 FEATURES • • • • • • • • 19225 DESCRIPTION The package of the VLM.G33. is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up
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VLMPG33N1P2,
VLMYG33P1Q2
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: TB9408VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well MQW • Dimensions chip (L x W x H in mm): 0.2 x 0.2 x 0.19 • Peak wavelength: λ = 940 nm
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TB9408VA
TB9408VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: MKT1822 Vishay Roederstein Metallized Polyester Film Capacitor Related Document: IEC 60384-2 FEATURES Dimensions in millimeters L Max. W Max. Marking H Max. RATED VOLTAGES UR 63 VDC, 100 VDC, 250 VDC, 400 VDC, 630 VDC, 1000 VDC 0.6 -1 6 - 0.4 PCM - 0.4 • Material categorization:
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MKT1822
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: KP1836 www.vishay.com Vishay Roederstein AC and Pulse Film/Foil Capacitors Radial Potted Type FEATURES • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage, very high current and high pulse
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KP1836
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SD103AWS-G, SD103BWS-G, SD103CWS-G www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching
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SD103AWS-G,
SD103BWS-G,
SD103CWS-G
SD103
18/10K
10K/box
08/3K
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: 440L Series www.vishay.com Vishay Cera-Mite AC Line Rated Ceramic Disc Capacitors Class X1, 760 VAC/Class Y1, 500 VAC FEATURES • Complying with IEC 60384-14 3rd edition • High reliability • Radial leads • Singlelayer AC Disc capacitors • Material categorization: For definitions of
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Original
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VT3045C-M3, VIT3045C-M3, VT3045CHM3, VIT3045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
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Original
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VT3045C-M3,
VIT3045C-M3,
VT3045CHM3,
VIT3045CHM3
O-220AB
O-262AA
22-B106
AEC-Q101
VT3045C
VIT3045C
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PDF
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Untitled
Abstract: No abstract text available
Text: VT4045C-M3, VIT4045C-M3, VT4045CHM3, VIT4045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
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Original
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VT4045C-M3,
VIT4045C-M3,
VT4045CHM3,
VIT4045CHM3
O-220AB
O-262AA
22-B106
AEC-Q101
VT4045C
VIT4045C
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PDF
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Untitled
Abstract: No abstract text available
Text: CS22 www.vishay.com Vishay Sfernice Single Value Wirebondable Thin Film Chip Resistors FEATURES • Small size 20 mil x 20 mil • Very high ohmic value up to 10 M • Aluminum or gold terminations Actual Size Chromium silicon thin film is very well suited to produce high
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: AC03 Safety AC03.CS www.vishay.com Vishay Draloric Axial Cemented Fusible Wirewound Safety Resistor FEATURES • UL1412 recognised fusible wirewound resistor; UL file no. E362452 • Surge voltage capability: 2 kV (10 to 91 ) and 4 kV (100 ) as per IEC 61000-4-5
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UL1412
E362452
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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