Hitachi DSA00279
Abstract: No abstract text available
Text: Hitachi Single-Chip Microcomputer H8S/2215 Series Hardware Manual ADE-602-217A Rev. 2.0 02/20/02 Hitachi Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in
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H8S/2215
ADE-602-217A
Connection/Disconnection482
Hitachi DSA00279
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2N04L03
Abstract: IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063
Text: IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPB80N04S2L-03
IPP80N04S2L-03
PG-TO263-3-2
PG-TO220-3-1
SP0002-20158
2N04L03
2N04L03
IPP80N04S2L-03
OPTIMOS
SP0002-20158
DD-32
TRANSISTOR SMD MARKING CODE 42
ANPS071E
IPB80N04S2L-03
PG-TO263-3-2
SP0002-19063
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2N04L03
Abstract: SPB80N04S2L-03 SPP80N04S2L-03
Text: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1
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SPP80N04S2L-03
SPB80N04S2L-03
P-TO263-3-2
P-TO220-3-1
Q67040-S4261
Q67040-S4262
2N04L03
SPB80N04S2L-03
SPP80N04S2L-03
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2N04L03
Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03
Text: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS Power-Transistor Product Summary Feature 40 VDS N-Channel RDS on Enhancement mode max. SMD version ID Logic Level P- TO263 -3-2 175°C operating temperature V 3.1 m 80 A P- TO220 -3-1 Avalanche rated dv/dt rated
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SPP80N04S2L-03
SPB80N04S2L-03
Q67040-S4261
Q67040-S4262
2N04L03
BSPP80N04S2L-03
BSPB80N04S2L-03,
2N04L03
ANPS071E
SPB80N04S2L-03
SPP80N04S2L-03
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2N04L03
Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03
Text: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS =Power-Transistor Product Summary Feature 40 VDS N-Channel RDS on Enhancement mode max. SMD version ID Logic Level P- TO263 -3-2 175°C operating temperature V 3.1 m 80 A P- TO220 -3-1 Avalanche rated dv/dt rated
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SPP80N04S2L-03
SPB80N04S2L-03
Q67040-S4261
Q67040-S4262
2N04L03
BSPP80N04S2L-03
BSPB80N04S2L-03,
2N04L03
ANPS071E
SPB80N04S2L-03
SPP80N04S2L-03
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62A50
Abstract: No abstract text available
Text: PD - 95404 IRL1104PbF Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 40V
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IRL1104PbF
O-220
O-220AB
62A50
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Untitled
Abstract: No abstract text available
Text: PD - 95404 IRL1104PbF Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 40V
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IRL1104PbF
O-220
O-220AB.
O-220AB
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2N04L03
Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03 28BE
Text: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 3.1 mΩ • Logic Level ID 80 A • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated
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SPP80N04S2L-03
SPB80N04S2L-03
Q67040-S4261
2N04L03
Q67040-S4262
BSPP80N04S2L-03
BSPB80N04S2L-03,
2N04L03
ANPS071E
SPB80N04S2L-03
SPP80N04S2L-03
28BE
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IRL1104
Abstract: No abstract text available
Text: PD -91805 IRL1104 HEXFET Power MOSFET Logic-Level Gate Drive ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Fully Avalanche Rated Description ● D VDSS = 40V RDS on = 0.008Ω
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IRL1104
O-220
IRL1104
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AN-994
Abstract: IRL1104 IRL1104L IRL1104S
Text: PD -95576 Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRL1104S l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL1104SPbF IRL1104LPbF l HEXFET Power MOSFET
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IRL1104S)
IRL1104L)
IRL1104SPbF
IRL1104LPbF
EIA-418.
AN-994
IRL1104
IRL1104L
IRL1104S
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91805
Abstract: irl110 IRL1104
Text: PD -91805 IRL1104 HEXFET Power MOSFET Logic-Level Gate Drive ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Fully Avalanche Rated Description ● D VDSS = 40V RDS on = 0.008Ω
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IRL1104
O-220
91805
irl110
IRL1104
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AN-994
Abstract: IRL1104 IRL1104L IRL1104S
Text: PD -95576 Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRL1104S l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL1104SPbF IRL1104LPbF l HEXFET Power MOSFET
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IRL1104S)
IRL1104L)
IRL1104SPbF
IRL1104LPbF
surf957)
EIA-418.
AN-994
IRL1104
IRL1104L
IRL1104S
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IRL1104
Abstract: No abstract text available
Text: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-177-32 IRL1104 HEXFET TO-220 PD -91805 IRL1104 HEXFET Power MOSFET Logic-Level Gate Drive ● Advanced Process Technology
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IRL1104
O-220
IRL1104
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AN-994
Abstract: IRL1104 IRL1104L IRL1104S
Text: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-177-40 IRL1104S HEXFET D2Pak PD -91840 IRL1104S/L PRELIMINARY l l l l l l l Logic-Level Gate Drive Advanced Process Technology
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IRL1104S
IRL1104S/L
IRL1104S)
IRL1104L)
AN-994
IRL1104
IRL1104L
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diode 838
Abstract: 217a IRF 3445 AN-994 IRL1104 IRL1104L IRL1104S
Text: PD -91840 IRL1104S/L PRELIMINARY l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL1104S Low-profile through-hole (IRL1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 40V
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IRL1104S/L
IRL1104S)
IRL1104L)
diode 838
217a
IRF 3445
AN-994
IRL1104
IRL1104L
IRL1104S
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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IRF7480MTRPbF
JESD47Fâ
J-STD-020Dâ
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Untitled
Abstract: No abstract text available
Text: TLC59711 www.ti.com SBVS181A – OCTOBER 2011 – REVISED JULY 2012 12-Channel, 16-Bit, Enhanced Spectrum PWM, RGB, LED Driver with 3.3-V Linear Regulator and Watchdog Timer Check for Samples: TLC59711 FEATURES APPLICATIONS • • • • 1 • • • •
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TLC59711
SBVS181A
12-Channel,
16-Bit,
16-bit
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Untitled
Abstract: No abstract text available
Text: TLC5971 www.ti.com SBVS146C – AUGUST 2010 – REVISED SEPTEMBER 2012 12-Channel, 16-Bit, Enhanced Spectrum, PWM, RGB, LED Driver with 3.3-V Linear Regulator Check for Samples: TLC5971 FEATURES APPLICATIONS • • • • 1 • • • • • • • •
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TLC5971
SBVS146C
12-Channel,
16-Bit,
16-bit
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HBM 00-01H
Abstract: RGB LED Cluster
Text: TLC5971 www.ti.com SBVS146C – AUGUST 2010 – REVISED SEPTEMBER 2012 12-Channel, 16-Bit, Enhanced Spectrum, PWM, RGB, LED Driver with 3.3-V Linear Regulator Check for Samples: TLC5971 FEATURES APPLICATIONS • • • • 1 • • • • • • • •
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TLC5971
SBVS146C
12-Channel,
16-Bit,
16-bit
HBM 00-01H
RGB LED Cluster
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QQ-B-654
Abstract: MIL-PRF-680 Ultrasonic Atomizing Transducer JAN-5727 Ultrasonic Atomizing Transducer circuit MIL-DTL-1222 Isopropyl Alcohol TT-I-735 grade A or B ultrasonic atomizer J-STD-006 electronic grade solder alloys electromagnetic bomb
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 July 2002. MIL-STD-202G 8 February 2002 SUPERSEDING MIL-STD-202F 1 APRIL 1980 DEPARTMENT OF DEFENSE TEST METHOD STANDARD ELECTRONIC AND ELECTRICAL COMPONENT PARTS
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MIL-STD-202G
MIL-STD-202F
J-330,
QQ-B-654
MIL-PRF-680
Ultrasonic Atomizing Transducer
JAN-5727
Ultrasonic Atomizing Transducer circuit
MIL-DTL-1222
Isopropyl Alcohol TT-I-735 grade A or B
ultrasonic atomizer
J-STD-006 electronic grade solder alloys
electromagnetic bomb
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Untitled
Abstract: No abstract text available
Text: CMT2210/17AW CMT2210/17AW Low-Cost 300 – 960 MHz OOK Stand-Alone RF Receiver Features Applications Low-Cost Consumer Electronics Applications Very Easy Development with RFPDK Home and Building Automation All Features Programmable
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CMT2210/17AW
CMT2210AW)
CMT2217AW)
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PD-91840
Abstract: irl110
Text: PD-91840 International I ö R Rectifier • • • • • • • IR L I 1 0 4 S /L PRELIM INARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL1104S Low-profile through-hole (IRL1104L) 175°C Operating Temperature
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OCR Scan
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PDF
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PD-91840
IRL1104S)
IRL1104L)
PD-91840
irl110
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DIODE CQ 618
Abstract: MOSFET IRL AN-994 IRL1104 IRL1104L IRL1104S marking dmx diode
Text: International 3BR Rectifier • • • • • • • PD'91840 IR L1104S /L PRELIMINARy HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL1104S Low-profile through-hole (IRL1104L) 175 °C Operating Temperature Fast Switching
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OCR Scan
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PDF
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IRL1104S)
IRL1104L)
DIODE CQ 618
MOSFET IRL
AN-994
IRL1104
IRL1104L
IRL1104S
marking dmx diode
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Neltron 2317sj
Abstract: Neltron 2218H Neltron 4403 4401 neltron Neltron 5504f1 Neltron 1223 Neltron 2218h Neltron 2214S 2200SA
Text: 25 HOW TO ORDER 5 5 0 4 F 1 —X X S - 0 2 —0 3 l HIGH QUALITY SELECTIVE GOLD - R I V E T W/BOARD L O CK /H EX SCREW — FEMALE — NO. OF POSITIONS — 8 .08M M FOOTPRINT 4155464 D Sub RA PCB Socket 9 Way 26 4155476 D Sub RA PCB Socket 15 Way 27 4155488
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5504F1â
XXS-02
UL94V-0
50MICROINCHES
AREA-100MICR0INCHES
6604P
6610P-321
8982S
ECBT2/E144392
Neltron 2317sj
Neltron 2218H
Neltron 4403
4401 neltron
Neltron 5504f1
Neltron 1223
Neltron
2218h
Neltron 2214S
2200SA
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