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    2114 RAM IC Search Results

    2114 RAM IC Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation

    2114 RAM IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VDR 20-100

    Abstract: MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3
    Text: MWS5114 TM 1024-Word x 4-Bit LSI Static RAM March 1997 Features as 2V Min • Fully Static Operation • All Inputs and Outputs Directly TTL Compatible • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 4045 Types • Three-State Outputs


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    PDF MWS5114 1024-Word 200ns 250ns 300ns MWS5114E3 MWS5114E2 MWS5114E2X MWS5114E1 MWS5114D3 VDR 20-100 MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3

    Untitled

    Abstract: No abstract text available
    Text: APPLICATION NOTE H8S/2100 Series I2C Slave Receive Mode 1 byte Introduction By means of channel 0 of the I2C bus interface, the H8S/2114 receives 1-byte data from the master device in slave receive mode. The frequency of the transfer clock is 100 kHz. Target Device


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    PDF H8S/2100 H8S/2114 H8S/2114 H8S/2104 H8S/2111B H8S/2110B H8S/2140B H8S/2141B H8S/2160B H8S/2161B

    Untitled

    Abstract: No abstract text available
    Text: APPLICATION NOTE H8S/2100 Series I2C Master Receive Mode 1 byte Introduction The H8S/2114 receives 1-byte data from a slave device by means of channel 0 of the I2C bus interface. The frequency of the transfer clock is 100 kHz. Target Device H8S/2114 H8S/2104


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    PDF H8S/2100 H8S/2114 H8S/2114 H8S/2104 H8S/2111B H8S/2110B H8S/2140B H8S/2141B H8S/2160B H8S/2161B

    Untitled

    Abstract: No abstract text available
    Text: APPLICATION NOTE H8S/2100 Series I2C Master Transmit Mode 128 bytes Introduction The H8S/2114 transmits 128 bytes of data to a slave device by means of channel 0 of the I2C bus interface. The frequency of the transfer clock is 100 kHz. Target Device H8S/2114


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    PDF H8S/2100 H8S/2114 H8S/2114 H8S/2104 H8S/2111B H8S/2110B H8S/2140B H8S/2141B H8S/2160B H8S/2161B

    Untitled

    Abstract: No abstract text available
    Text: APPLICATION NOTE H8S/2100 Series I2C Slave Receive Mode 128 bytes Introduction By means of channel 0 of the I2C bus interface, the H8S/2114 receives 128-byte data from the master device in slave receive mode. The frequency of the transfer clock is 100 kHz.


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    PDF H8S/2100 H8S/2114 128-byte H8S/2114 H8S/2104 H8S/2111B H8S/2110B H8S/2140B H8S/2141B H8S/2160B

    Untitled

    Abstract: No abstract text available
    Text: APPLICATION NOTE H8S/2100 Series I2C Slave Transmit Mode 128 bytes Introduction By means of channel 0 of the I2C bus interface, the H8S/2114 transmits 128-byte data to the master device in slave transmit mode. The frequency of the transfer clock is 100 kHz.


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    PDF H8S/2100 H8S/2114 128-byte H8S/2114 H8S/2104 H8S/2111B H8S/2110B H8S/2140B H8S/2141B H8S/2160B

    Untitled

    Abstract: No abstract text available
    Text: APPLICATION NOTE H8S/2100 Series Interrupt Handling during I2C Communication master receive operation Introduction The H8S/2114 receives 128 bytes of data from a slave device by means of channel 0 of the I2C bus interface. During the communication, interrupts are generated using a free-running timer. The frequency of the transfer clock is 100 kHz.


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    PDF H8S/2100 H8S/2114 H8S/2114 H8S/2104 H8S/2111B H8S/2110B H8S/2140B H8S/2141B H8S/2160B H8S/2161B

    Am91L24

    Abstract: AM91L24B 91l24 2114 1k x 4 SRAM Am91L14 2114 1k x 16 RAM 2114 SRAM Am9124 Am9124/Am9114 am91l14 am91l24 AM9124B
    Text: Am9114/9124 Am9114/9124 1024 x 4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • Low operating and standby power Access times down to 200 ns Am9114 is a direct plug-in replacement for 2114 Am9124 pin and function compatible with Am9114 and 2114, plus 5 3 power-down feature


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    PDF Am9114/9124 Am9114 Am9124 --Am9124, --Am9114 MIL-STD-883, Am91L24 AM91L24B 91l24 2114 1k x 4 SRAM Am91L14 2114 1k x 16 RAM 2114 SRAM Am9124/Am9114 am91l14 am91l24 AM9124B

    Untitled

    Abstract: No abstract text available
    Text: Extended Temperature Range Supplement F 2114 /F 2 114L 1024 x 4 Static RAM MOS Memory Products Description The F 2 1 14 is a 4096-bit static Random Access Memory RAM organized as 1024 words of four bits each. Since the operation of the F 2 1 14 is entirely


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    PDF 4096-bit F2114

    SCM21C14

    Abstract: 2114 ram 2114AL-4 ram 2114 2114 static ram 2114 2114 static ram memory memory 2114 STATIC RAM 2114 SCM2114ALM
    Text: SCM2114AL SOLID ^ STATE <§P SCIENTIFIC 1024 x 4 Static CMOS RAM Preliminary Pin Configuration Features i Fast Access Time Selection: 100ns/120ns/150ns/200ns i Direct Replacement for NMOS 2114 RAMs I 883 Qualified Version: 883/2114ALM i Three-State Outputs


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    PDF SCM2114AL 100ns/120ns/150ns/200ns 883/2114ALM SCM2114AL 2114ALEIP SCM21C14 2114 ram 2114AL-4 ram 2114 2114 static ram 2114 2114 static ram memory memory 2114 STATIC RAM 2114 SCM2114ALM

    2148 static ram

    Abstract: 2148 ram ram 2114 D2148 D2148-3 2148 2114 static ram diagram 2114 pin diagram Scans-00105431 2114 ram
    Text: 2148 4096 Bit 1024 X 4 HMOS S ta tic RAM FEATURES GENERAL DESCRIPTION • • • • • • • • The Intersil 2148 is a high speed 4096 bit static RAM or­ ganized 1024 words by 4 bits. It is a single-layer poly HMOS version of the industry standard 2114, and pin compatible


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    PDF 165mW 10mHz 2148 static ram 2148 ram ram 2114 D2148 D2148-3 2148 2114 static ram diagram 2114 pin diagram Scans-00105431 2114 ram

    S2114

    Abstract: S211 2114L 2114 static ram RAM 2114 vmos S2114-1 S2114-2 S2114-3 S2114A-1
    Text: AMI S 2114 40 96 BIT 1024x4 STATIC V M O S RAM Features G eneral D escription □ High Speed Operation: Access Time: 150ns Maximum (-1 ) The AMI S2114 is a 4096 bit fully static RAM organ­ ized as 1024 words by 4 bits. The device is fully TTL compatible on all inputs and outputs and has a single


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    PDF S2114 1024x4) 150ns S211 2114L 2114 static ram RAM 2114 vmos S2114-1 S2114-2 S2114-3 S2114A-1

    2114 static ram

    Abstract: ic 2114 RAM 2114 ci 2114 memory ic 2114 2114 2114 ram 2114 static ram ic memory 2114 P2114
    Text: 2114 4096 Bit 1024x4 NMOS Static RAM Ö M Ü f^ D IL FEATURES D E S C R IP T IO N • • • • • • • • The 2114 is a 4096-bit s ta tic R andom A cce ss M em ory organized 1024 w ord s x 4 bits. The s to ra g e c e lls and decode and co n tro l c irc u itry are c o m p le te ly s ta tic , th e re fo re no


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    PDF 1024x4) 2114L) 4096-bit 2114L2 2114L3 2114L 2114 static ram ic 2114 RAM 2114 ci 2114 memory ic 2114 2114 2114 ram 2114 static ram ic memory 2114 P2114

    91L14

    Abstract: cd018 ST 9114 Am91L14
    Text: a Am9114/Am91 L14 AdvS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access tim es down to 200 ns Am9114 is a direct plug-in replacem ent fo r 2114 • • High output drive: 3.2-mA sink current @ 0.4 V TTL-kJentical input/output levels


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    PDF Am9114/Am91 1024x4 Am9114 Am9114/Am91L14 KS000010 WF000171 QP000552 OP000202 91L14 cd018 ST 9114 Am91L14

    memory ic 2114

    Abstract: ic 2114 memory 2114 2114L2 2114 static ram 2114 static ram ic 2114l-3 2114 ram 2114L3 2114 pin diagram
    Text: 2114 4 0 9 6 Bit 1 0 2 4 x 4 NMOS S ta tic RAM DGmi^DIL DESCRIPTION FEATURES • Cycle Time Equal to Access Time • Completely Static - No Clock Required • Common Data Input and Output • TTL Compatible Inputs and Outputs • 883A Class B Processing Available


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    PDF 1024x4) 2114L) 4096-bit 2114L2 2114L3 2114L memory ic 2114 ic 2114 memory 2114 2114L2 2114 static ram 2114 static ram ic 2114l-3 2114 ram 2114L3 2114 pin diagram

    AM91L148

    Abstract: 9114 RAM AM81H 91L14
    Text: A m 9 1 1 4 /A m 9 1 L 1 4 “ " 1024x4 Static RAM S Devices DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access times down to 200 ns Am9114 is a direct plug-in replacement for 2114 • • High output drive: 3.2-mA sink current @ 0.4 V


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    PDF 1024x4 Am9114 Am9114/Am91L14 OP000542 OP000552 AM91L148 9114 RAM AM81H 91L14

    ci 2114

    Abstract: 2114L-3 2114L2 2114 static ram 2114 2114 static ram diagram 2114 ram RAM 2114 memory 2114 D2114L RAM
    Text: 2114 4 0 9 6 Bit 1 0 2 4 x 4 NMOS Static RAM M1KR5H. D E S C R IP T IO N FEA TU R ES • Cycle Time Equal to Access Time • Completely Static • No Clock Required • Common Data Input and Output • TTL Compatible Inputs and Outputs • 883A Class B Processing Available


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    PDF 1024x4) 2114L) 4096-bit 2114L2 2114L3 2114L ci 2114 2114L-3 2114L2 2114 static ram 2114 2114 static ram diagram 2114 ram RAM 2114 memory 2114 D2114L RAM

    9114 RAM

    Abstract: 9114 static ram AM9124 RAM 9114 AM9114 91L14 2114 static ram AM9114C KS000010 AM91L14B
    Text: a Advanced Micro Devices A m 9 1 1 4 /A m 9 1 L 1 4 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access tim es down to 200 rts Am9114 is a direct plug-in replacem ent fo r 2114 • • High output drive: 3.2-mA sink current @ 0.4 V


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    PDF Am9114/Am91 1024x4 Am9114 Am9114/Am91t-14 the14 opooq542 OPOOQ552 op000202 Am9114/Am91L14 9114 RAM 9114 static ram AM9124 RAM 9114 91L14 2114 static ram AM9114C KS000010 AM91L14B

    sram 2114

    Abstract: 2114 static ram 2114 SRAM 2114 static ram ic 2114 "static RAM" 2114 Ram pinout 18 RAM 2114 3007a STATIC RAM 2114 2114 ram
    Text: L C 351 4 3514L c -m o s # lsi CIRCUIT DRAWING NO.40D2 1 0 2 4 WORDS X A BITS HIGH-SPEED CMOS STATIC RAM ' General Description 3007A ' The LC 3514/LC3514L are nonclocked CMOS static RAM's organized as 1024 words x 4 bits They are compatible w ith worldwide standard N-channel 2114-type 4K SRAM's and have a complete CMOS circuit


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    PDF LC3514 3514L LC3514/LC3514L 2114-type 200ns LC3514L, 200ns LC3514D, 18-pin LC3514D sram 2114 2114 static ram 2114 SRAM 2114 static ram ic 2114 "static RAM" 2114 Ram pinout 18 RAM 2114 3007a STATIC RAM 2114 2114 ram

    LC3514A-15

    Abstract: LC3514AL-15 LC3514AL-20 RAM 2114 2114 Ram pinout 18 LC3514A LC3514AL15K LC3514AL-20K ci 2114 LC3514A15K
    Text: F N o. 2881 i L C 3514A - i 5K,2qk/L C 3514A L - i 5K,20K CMOS LSI 1024 Words X 4 Bits High-Speed CMOS Static RAM G e n e ra l D e sc rip tio n The LC3514A/LC3514AL are fully asynchronous CMOS static RAMs organized as 1024 wordsX 4 bits. They are compatible with worldwide standard N-channel 2114-type 4K SRAMs and have a full CMOS


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    PDF LC3514A/LC3514AL 2114-type LC3514AL, LC3514A-15K 20K/LC3514AL-15K LC3514AL-15K LC3514A-15 LC3514AL-15 LC3514AL-20 RAM 2114 2114 Ram pinout 18 LC3514A LC3514AL15K LC3514AL-20K ci 2114 LC3514A15K

    Untitled

    Abstract: No abstract text available
    Text: Random-Access Memories RAMs MWS5114 a6 — I I8 “ VDD A5 — 2 I7 — A? * 4 - 3 I6 a 3 — 4 I - «8 I5 - A g CMOS 1024-Word by 4-Bit LSI Static RAM Ao — 5 I4 — I/O t Features: A| — 6 I3 — 1 / 0 2 7 I2 - I / O 3 • Fully static operation ■ In d u s try s ta n d a rd 1024 x 4 p in o u t (sam e as p in o u ts fo r 6514, 2114,


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    PDF MWS5114 1024-Word 30982R 92CS-3III4R2

    2114 static ram

    Abstract: 2114-UCB L2114-2CB RAM 2114 L2114-3CE 2114-2CB semi 2114ucb L2114-2CE EMM Semi L2114UCB
    Text: • 1024 words x 4 bits • T h ree access times 200, 300, and 450 nsec • Low operating power — 175 m W typical • Standard pow er — 222 m W typical • Com mon output bus • Three-state output drivers • Fully S T A T IC — no clock or refresh


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    PDF 1024x4 18-pin 2114 static ram 2114-UCB L2114-2CB RAM 2114 L2114-3CE 2114-2CB semi 2114ucb L2114-2CE EMM Semi L2114UCB

    2114 static ram

    Abstract: 2114 Ram pinout 18 2114 static ram ic 2114 4k x 4 2114 LC RAM 2114 LC 2114 ram 2114 RAM ic 2114 "static RAM" ic 2114
    Text: SANYO SEMICONDUCTOR CORP 7b 7997076 d Ë J 7 ^ 7 07b OGOlTEM SANYO SEM ICO NDUCTOR CORP LC 351 4 f3514L 76C 0 1 9 2 4 c-m os l s i 1024 WORDS X A BITS HIGH-SPEED CMOS STATIC RAM 3 f~ 07 CIRCUIT D R A W IN G NO.40D2 3007A General Description The LC3514/LC3514L are nonclocked CMOS static RAM's organized as 1024 words x 4 bits They are


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    PDF f3514L LC3514/LC3514L 2114-type 200ns LC3514D, LC3514D LC3514E LC3514E 2114 static ram 2114 Ram pinout 18 2114 static ram ic 2114 4k x 4 2114 LC RAM 2114 LC 2114 ram 2114 RAM ic 2114 "static RAM" ic 2114

    SCM21C14

    Abstract: 21c14 SCM21C14-1 2114 LC RAM 2114 LC 21C14-4 2114 RAM ic 2114 4k x 4 scm21C memory 2114
    Text: SOLID iS s STATE <§P SCIENTIFIC SCM21C14 883/21C14 1024 x 4 Static CMOS RAM Features Pin Configuration 181 A5 I 1 2 1 7 1I a 7 A4 I 1 3 16 1I a 8 CO Ai l 1 6 1 3 11 i/o 2 121 1 1/03 18 11 I 11/04 GND I I 9 10 I 1 WE CM < 17 °mll 14 1I I/O! B lo ck Diagram


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    PDF SCM21C14 883/21C14 100ns/120ns/150ns/200ns 883/21C14M 40mA/50/iA 21C14 SCM21C14-1 2114 LC RAM 2114 LC 21C14-4 2114 RAM ic 2114 4k x 4 scm21C memory 2114