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    2100 WCDMA REPEATER CIRCUIT Search Results

    2100 WCDMA REPEATER CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    2100 WCDMA REPEATER CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2100 WCDMA repeater circuit

    Abstract: No abstract text available
    Text: E-pHEMT Drive Amplifier CE2024 Product Features Application CP-16 package • GaAs E-pHEMT chip on board • High Efficiency and Linearity • High Output Power and Small Size • Single Supply Voltage 5v with Ceramic Substrate • No External Matching Circuit Needed


    Original     		PDF CE2024 CP-16 CExx24 2100 WCDMA repeater circuit

    GSM 3g repeater circuit

    Abstract: HMC 007
    Text: HMC457QS16G / 457QS16GE v01.0705 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Designer’s Kit Available Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier:


    Original     		PDF HMC457QS16G 457QS16GE HMC457QS16GE QSOP16G HMC-DK002 HMC457QS16G GSM 3g repeater circuit HMC 007

    2100 wcdma repeater circuit

    Abstract: HMC457 HMC457QS16G GSM 3g repeater circuit RF TRANSISTOR 1 WATT HMC457QS16GE
    Text: HMC457QS16G / 457QS16GE v03.0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout


    Original     		PDF HMC457QS16G 457QS16GE HMC457QS16GE QSOP16G HMC-DK002 HMC457QS16G 2100 wcdma repeater circuit HMC457 GSM 3g repeater circuit RF TRANSISTOR 1 WATT

    Untitled

    Abstract: No abstract text available
    Text: HMC457QS16G / 457QS16GE v03.0907 LINEAR & POWER AMPLIFIERS - SMT 11 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range ampliier: Output IP3: +46 dBm


    Original     		PDF HMC457QS16G 457QS16GE HMC457QS16GE QSOP16G HMC-DK002 HMC457QS16G

    GSM 3g repeater circuit

    Abstract: HMC457QS16G 2100 WCDMA repeater circuit
    Text: HMC457QS16G / 457QS16GE v02.0107 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA


    Original     		PDF HMC457QS16G 457QS16GE HMC457QS16GE QSOP16G HMC-DK002 HMC457QS16G GSM 3g repeater circuit 2100 WCDMA repeater circuit

    Untitled

    Abstract: No abstract text available
    Text: HMC457QS16G / 457QS16GE v01.0705 AMPLIFIERS - SMT 8 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA


    Original     		PDF HMC457QS16G 457QS16GE HMC457QS16GE QSOP16G HMC457QS16G

    HMC457QS16G

    Abstract: GSM repeater circuit using transistor 2100 mhz rf power amplifier circuit diagram 500 watt power circuit diagram GSM 3g repeater circuit 3g amplifier 2100 WCDMA repeater circuit HMC457
    Text: HMC457QS16G / 457QS16GE v03.0907 6 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout


    Original     		PDF HMC457QS16G 457QS16GE HMC457QS16GE QSOP16G HMC-DK002 HMC457QS16G GSM repeater circuit using transistor 2100 mhz rf power amplifier circuit diagram 500 watt power circuit diagram GSM 3g repeater circuit 3g amplifier 2100 WCDMA repeater circuit HMC457

    GSM 3g repeater circuit

    Abstract: HMC457 HMC457QS16G
    Text: HMC457QS16G / 457QS16GE v03.0907 LINREAR & POWER AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm


    Original     		PDF HMC457QS16G 457QS16GE HMC457QS16GE QSOP16G HMC-DK002 HMC457QS16G GSM 3g repeater circuit HMC457

    Untitled

    Abstract: No abstract text available
    Text: HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Features Typical Applications AMPLIFIERS - SMT 8 The HMC457QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout


    Original     		PDF HMC457QS16G QSOP16G HMC457QS16G

    GSM WCDMA repeater circuit

    Abstract: HMC457QS16G 2100 mhz rf power amplifier circuit diagram GSM 3g repeater circuit 301 miniature smt transistor
    Text: HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Features Typical Applications The HMC457QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout


    Original     		PDF HMC457QS16G HMC457QS16G QSOP16G GSM WCDMA repeater circuit 2100 mhz rf power amplifier circuit diagram GSM 3g repeater circuit 301 miniature smt transistor

    GRM188R71H104KA93

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.1, 3/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier


    Original     		PDF MMA20312B MMA20312BT1 GRM188R71H104KA93

    ma01 transistor

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1, 3/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier


    Original     		PDF MMA20312B MMA20312BT1 ma01 transistor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.2, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier


    Original     		PDF MMA20312B MMA20312BT1 MMA20312B

    2100 WCDMA repeater circuit

    Abstract: FR408 z137
    Text: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.2, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier


    Original     		PDF MMA20312B MMA20312BT1 2100 WCDMA repeater circuit FR408 z137

    FR408

    Abstract: 06035J100GBS 25c2625 MARKING HBT AN1955 GRM188R71H104KA93 06035J5R6BBS RR0816Q-121-D MMA20312 MMA20312BT1
    Text: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 0, 10/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier


    Original     		PDF MMA20312B MMA20312BT1 MMA20312B FR408 06035J100GBS 25c2625 MARKING HBT AN1955 GRM188R71H104KA93 06035J5R6BBS RR0816Q-121-D MMA20312 MMA20312BT1

    WP-22

    Abstract: No abstract text available
    Text: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


    Original     		PDF RT240J RT240 50MHz 40dBm 43dBm 900MHz IMT-2000 WP-22 WP-12 RT240

    GRM188R60J106ME47

    Abstract: 37Z6 FR408
    Text: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station


    Original     		PDF MMA20312BV MMA20312BVT1 MMA20312BV GRM188R60J106ME47 37Z6 FR408

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMA20312BV Rev. 0, 8/2011 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station


    Original     		PDF MMA20312BV MMA20312BVT1 MMA20312BV

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station


    Original     		PDF MMA20312BV MMA20312BVT1 MMA20312BV

    FR408

    Abstract: FR-408 06035J100GBS GRM188R71H104KA93 GRM188R60J106ME47 06033J220GBS AN1955 z137 C18 QFN 06035J4R7BBS
    Text: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 0, 8/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station


    Original     		PDF MMA20312BV MMA20312BVT1 MMA20312BV FR408 FR-408 06035J100GBS GRM188R71H104KA93 GRM188R60J106ME47 06033J220GBS AN1955 z137 C18 QFN 06035J4R7BBS

    Untitled

    Abstract: No abstract text available
    Text: CV221-2A 1.9 – 2.7 GHz Dual-Branch Downconverter IF1 OUTPUT GND 26 AMP1 INPUT GND 27 GND MIXER IF1 28 25 24 23 22 IF 21 BIAS RF GND 2 20 GND IF Amp 1 BIAS 3 19 GND GND 4 18 GND GND 5 LO Driver Amp 17 LO GND 6 IF Amp 2 16 GND RF 2 7 INPUT RF 15 GND 10 11


    Original     		PDF CV221-2A CV221-2A 1-800-WJ1-4401

    CV221-2A

    Abstract: CV221-2AF CV221-2APCB240 JESD22-A114
    Text: CV221-2A 1.9 – 2.7 GHz Dual-Branch Downconverter IF1 OUTPUT GND 26 AMP1 INPUT GND 27 GND MIXER IF1 28 25 24 23 22 IF RF 21 BIAS GND 2 20 GND IF Amp 1 BIAS 3 19 GND GND 4 18 GND GND 5 LO Driver Amp 17 LO GND 6 IF Amp 2 16 GND 15 GND IF 8 9 10 11 12 13 14


    Original     		PDF CV221-2A 1-800-WJ1-4401 CV221-2A CV221-2AF CV221-2APCB240 JESD22-A114

    up converter RF 2,40 GHz

    Abstract: CV221-2A CV221-2AF CV221-2APCB240 JESD22-A114
    Text: CV221-2A 1.9 – 2.7 GHz Dual-Branch Downconverter IF1 OUTPUT GND 26 AMP1 INPUT GND 27 GND MIXER IF1 28 25 24 23 22 IF RF 21 BIAS GND 2 20 GND IF Amp 1 BIAS 3 19 GND GND 4 18 GND GND 5 LO Driver Amp 17 LO GND 6 IF Amp 2 16 GND 15 GND 8 9 10 11 12 13 14 GND


    Original     		PDF CV221-2A 1-800-WJ1-4401 up converter RF 2,40 GHz CV221-2A CV221-2AF CV221-2APCB240 JESD22-A114

    CV221-2A

    Abstract: CV221-2AF CV221-2APCB240 JESD22-A114
    Text: CV221-2A The Communications Edge TM 1.9 – 2.4 GHz Dual-Branch Downconverter IF1 OUTPUT GND GND 26 AMP1 INPUT MIXER IF1 27 GND GND 28 25 24 23 22 IF RF 21 BIAS GND 2 20 GND IF Amp 1 BIAS 3 19 GND GND 4 18 GND GND 5 LO Driver Amp 17 LO GND 6 IF Amp 2 16 GND


    Original     		PDF CV221-2A 1-800-WJ1-4401 CV221-2A CV221-2AF CV221-2APCB240 JESD22-A114