.110 faston tab
Abstract: 62514-1 POKE CTL1039-121 CTL1039-301-001
Text: 501-30 Qualification Test Report 20Oct08 Rev D MAG-MATE* Standard Terminals 1. INTRODUCTION 1.1. Purpose Testing was perform ed on MAG-MATE* standard term inals to determ ine their conform ance to the requirem ents of Product Specification 108-2012 Revision D.
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20Oct08
12Dec83
14Aug85.
CTL1039-301-001.
20Jun07
05Oct07.
CTL1039-121.
125/C.
118/C
.110 faston tab
62514-1
POKE
CTL1039-121
CTL1039-301-001
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JESD22-B102
Abstract: J-STD-002 P600 6KA24
Text: 6KA24 Vishay General Semiconductor Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Excellent clamping capability • Low leakage current • High surge capability
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6KA24
2002/95/EC
2002/96/EC
2000lectual
18-Jul-08
JESD22-B102
J-STD-002
P600
6KA24
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ZGL41-110
Abstract: ZGL41-200A DO-213AB JESD22-B102 J-STD-002 ZGL41-100
Text: ZGL41-100 thru ZGL41-200A Vishay General Semiconductor Surface Mount Glass Passivated Power Voltage-Regulating Diodes FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor
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ZGL41-100
ZGL41-200A
J-STD-020C,
DO-213AB
2002/95/EC
2002/96/EC
18-Jul-08
ZGL41-110
ZGL41-200A
DO-213AB
JESD22-B102
J-STD-002
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JESD22-B102
Abstract: J-STD-002 LCE10 LCE10A LCE11 LCE11A LCE12 LCE28A
Text: LCE6.5 thru LCE28A Vishay General Semiconductor Low Capacitance TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle : 0.01 % • Excellent clamping capability
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LCE28A
2002/95/EC
2002/96/EC
18-Jul-08
JESD22-B102
J-STD-002
LCE10
LCE10A
LCE11
LCE11A
LCE12
LCE28A
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JESD22-B102
Abstract: J-STD-002 LVB14
Text: New Product LVB14A Vishay General Semiconductor Low VF Surface Mount Transient Voltage Suppressors FEATURES • Uni-directional polarity only • Peak pulse power: 600 W 10/1000 µs • Ideal for automated placement • Low forward voltage • Meets MSL level 1, per J-STD-020, LF
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LVB14A
J-STD-020,
DO-214AA
18-Jul-08
JESD22-B102
J-STD-002
LVB14
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Untitled
Abstract: No abstract text available
Text: TGL41-6.8 thru TGL41-200A Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional polarity only
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TGL41-6
TGL41-200A
J-STD-020,
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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4 PIN IC Optocoupler with Phototransistor Output
Abstract: CNY64 CNY65 CNY66
Text: CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage FEATURES • Rated recurring peak voltage repetitive VIORM = 1000 VRMS 64 • Thickness through insulation ≥ 3 mm 65 • Creepage current resistance according to
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CNY64,
CNY65,
CNY66
0303/IEC
2002/95/EC
2002/96/EC
CNY64/CNY65/CNY66
18-Jul-08
4 PIN IC Optocoupler with Phototransistor Output
CNY64
CNY65
CNY66
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7159DP Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7159DP
18-Jul-08
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S8252
Abstract: si7198 82529
Text: SPICE Device Model Si7198DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7198DP
18-Jul-08
S8252
si7198
82529
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Vishay VJ1206
Abstract: VJ0402 VJ0603 VJ0805 VJ1206 VJ1210 VJ1808 VJ1812 VJ2220 VJ2225
Text: Not for New Designs Product Discontinuation VJ BX Dielectric Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitors for TCC Critical Applications FEATURES • Designed for excellent T/VCC • Temperature voltage coefficient T/VCC RoHS COMPLIANT
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18-Jul-08
Vishay VJ1206
VJ0402
VJ0603
VJ0805
VJ1206
VJ1210
VJ1808
VJ1812
VJ2220
VJ2225
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d472k33y5ph6.j5r
Abstract: IEC 60 384 4 D223M39Z5UH6 d332 IEC 60 384 2 D223M39Z5 LV 100 V
Text: LV 100 V Vishay BCcomponents Ceramic Disc Capacitors Class 1 and 2, 100 V DC General Purpose FEATURES • Low losses • High stability D D e3 • High capacitance in small size • Kinked (preferred) or straight leads • Lead (Pb)-free available Tangent
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18-Jul-08
d472k33y5ph6.j5r
IEC 60 384 4
D223M39Z5UH6
d332
IEC 60 384 2
D223M39Z5
LV 100 V
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24C208
Abstract: No abstract text available
Text: CAT24C208 8-Kb Dual Port Serial EEPROM FEATURES DESCRIPTION • Supports Standard and Fast I2C protocol* The CAT24C208 is an 8-Kbit Dual Port Serial CMOS EEPROM internally organized as 4 segments of 256 bytes each. The CAT24C208 features a 16-byte page write buffer and can be accessed from either of two
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CAT24C208
16-byte
CAT24C208
24C208
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Untitled
Abstract: No abstract text available
Text: BAT54AW Vishay High Power Products Schottky Rectifier, 2 x 0.1 A FEATURES 3 • Small foot print, surface mountable • Very low forward voltage drop 2 • Extremely fast switching speed for high frequency operation 1 A 1 • Guard ring for enhanced ruggedness and long term
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BAT54AW
OT-23
10any
18-Jul-08
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DO-213AB
Abstract: JESD22-B102 J-STD-002 TGL41-200A TGL41-6
Text: TGL41-6.8 thru TGL41-200A Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional polarity only
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TGL41-6
TGL41-200A
J-STD-020,
2002/95/EC
2002/96/EC
DO-213AB
11-Mar-11
DO-213AB
JESD22-B102
J-STD-002
TGL41-200A
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ISO7637
Abstract: DO-218AB ISO7637-2 JESD22-B102 J-STD-002 SM5A27 DO218AB
Text: SM5A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Low leakage current • Low forward voltage drop • High surge capability
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SM5A27
ISO7637-2
J-STD-020,
2002/95/EC
2002/96/EC
DO-218AB
18-Jul-08
ISO7637
DO-218AB
JESD22-B102
J-STD-002
SM5A27
DO218AB
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DO-204AL
Abstract: JESD22-B102 J-STD-002 P4KE530 P4KE550
Text: P4KE530 & P4KE550 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional only • Excellent clamping capability • Very fast response time DO-204AL DO-41 • Low incremental surge resistance
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P4KE530
P4KE550
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
18-Jul-08
DO-204AL
JESD22-B102
J-STD-002
P4KE530
P4KE550
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Untitled
Abstract: No abstract text available
Text: ESDA6V1-5P6 5-Line TVS Array Peak Pulse Power 150 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free Features: * 150 Watts Peak Pulse Power per Line(tp=8/20 s) * Monolithic Structure * Low Clamping Voltage * IEC Compatibility(EN6100-4) 61000-4-2(ESD): Air–15kV, Contact-8kV
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EN6100-4)
883E-Method
OT-563
OT-563
30mVRMS
20-Oct-08
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5KA10
Abstract: 5KA10A 5KA11 5KA11A JESD22-B102 J-STD-002
Text: 1.5KA6.8 thru 1.5KA47A Vishay General Semiconductor Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Available in uni-directional polarity only • 1500 W peak pulse power capability with a
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5KA47A
2002/95/EC
2002/96/EC
18-Jul-08
5KA10
5KA10A
5KA11
5KA11A
JESD22-B102
J-STD-002
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Untitled
Abstract: No abstract text available
Text: P4KE530 & P4KE550 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional only • Excellent clamping capability • Very fast response time DO-204AL DO-41 • Low incremental surge resistance
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P4KE530
P4KE550
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
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Si4804CDY
Abstract: 82528 S-8252
Text: SPICE Device Model Si4804CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si4804CDY
18-Jul-08
82528
S-8252
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MELF pad layout
Abstract: DO-213AB JESD22-B102 J-STD-002 TGL41-200A TGL41-6
Text: TGL41-6.8 thru TGL41-200A Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional polarity only
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TGL41-6
TGL41-200A
J-STD-020,
2002/95/EC
2002/96/EC
DO-213AB
18-Jul-08
MELF pad layout
DO-213AB
JESD22-B102
J-STD-002
TGL41-200A
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Equivalent of P6KA18
Abstract: DO-204AC JESD22-B102 J-STD-002 P6KA10 P6KA10A P6KA43A
Text: P6KA6.8 thru P6KA43A Vishay General Semiconductor Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Available in uni-directional polarity only • 600 W peak pulse power capability with a
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P6KA43A
2002/95/EC
2002/96/EC
DO-204AC
DO-15)
18-Jul-08
Equivalent of P6KA18
DO-204AC
JESD22-B102
J-STD-002
P6KA10
P6KA10A
P6KA43A
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DO-218AB
Abstract: DO218AB SM6A27HE3 SM6A27 ISO7637 ISO7637-2 JESD22-B102 J-STD-002 ISO-7637-2
Text: SM6A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Low leakage current • Low forward voltage drop • High surge capability
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SM6A27
ISO7637-2
J-STD-020,
2002/95/EC
2002/96/EC
DO-218AB
18-Jul-08
DO-218AB
DO218AB
SM6A27HE3
SM6A27
ISO7637
JESD22-B102
J-STD-002
ISO-7637-2
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Untitled
Abstract: No abstract text available
Text: LCE6.5 thru LCE28A Vishay General Semiconductor Low Capacitance TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle : 0.01 % • Excellent clamping capability
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LCE28A
2002/95/EC
2002/96/EC
11-Mar-11
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