Untitled
Abstract: No abstract text available
Text: Capacitive Sensors CFBM 20N1600 Capacitive Sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C
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20N1600
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C
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20N1600
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20N160
Abstract: crt flyback
Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 20N140 IXBH 20N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 20 A 4.7 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings
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20N140
20N160
O-247
IXBH20
20N160
crt flyback
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C
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20N1600
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Capacitive proximity Sensors
Abstract: No abstract text available
Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C
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20N1600
Capacitive proximity Sensors
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C
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20N1600
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C
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20N1600
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20N1600
Abstract: No abstract text available
Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15% +10 . +70 °C
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20N1600
20N1600
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C
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20N1600
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 79,5 ø 20 Pot LED general data photo nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm mounting type flush GND electrode yes temperature drift
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20N1600
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15% +10 . +70 °C
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20N1600
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 79,5 ø 20 Pot LED general data photo nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm mounting type shielded GND electrode yes temperature drift
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20N1600
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20N160
Abstract: 20N140
Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 20N140 IXBH 20N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 20 A 4.7 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings
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20N140
20N160
O-247
20N160
IXBH20
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED general data sample picture mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift
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20N1600
20N3600
20P1600
20P3600
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Untitled
Abstract: No abstract text available
Text: Capacitive sensors Versatile, contactless, durable Edition 2012/2013 With capacitive sensors from Baumer you can complete almost any task. Visibly better: Baumer sensors. The Baumer Group is an internationally leading manufacturer of sensors and system solutions for factory and process automation. Partnership, precision and
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CH-8501
0x/12
11xxxxxx
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED sample picture general data mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift
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20N1600
20N3600
20P1600
20P3600
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED general data sample picture mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift
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20N1600
20N3600
20P1600
20P3600
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED general data sample picture mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift
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20N1600
20N3600
20P1600
20P3600
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SAR oscillateur
Abstract: No abstract text available
Text: Détecteurs capacitifs Polyvalents, sans contact, durables Edition 2012/2013 Les détecteurs capacitifs de Baumer, la solution à presque toutes vos tâches. Visiblement meilleurs: les détecteurs de Baumer. Le Groupe Baumer est un leader international en matière de fabrication de détecteurs et de solutions de systèmes pour l’automatisation des procédés et des lignes
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CH-8501
0x/12
11xxxxxx
SAR oscillateur
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20p16
Abstract: LED80
Text: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED sample picture general data mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift
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20N1600
20N3600
20P1600
20P3600
20p16
LED80
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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Untitled
Abstract: No abstract text available
Text: n ix Y S Advanced Technical Information High Voltage BIMOSFET Monolithic Bipolar MOS Transistor V CES IXBH 20N140 IXBH 20N160 ^C25 V CE sat N -C hannel, E n hance m en t M ode tfi 1400/1600 V 20 A 5.4 V typ. 35 ns TO-247 AD Symbol Conditions Maximum Ratings
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OCR Scan
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20N140
20N160
O-247
D-68623
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IXBH 40N160
Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □
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20N60B
35N60B
20N120A
20N120
30N120
75N120A
T0-220
9N140
9N160
IXBH 40N160
20N120D1
Insulated Gate Bipolar Transistors
55N120D1
20N120A
20N60BD1
9N140
ixbh9n160
30N120
35N60BD1
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50N60
Abstract: 50N100 50n80 40N160 9N160G 50N6
Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C
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9N140G
15N140
20N140
40N140
9N160G
15N160
20N160
50N60
50N100
50n80
40N160
50N6
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