Untitled
Abstract: No abstract text available
Text: 17.0-26.0 GHz GaAs MMIC Power Amplifier 20MPA0289 March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Excellent Saturated Output Stage Competitive Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing
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Original
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01-Mar-05
20MPA0289
MIL-STD-883
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PDF
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DM6030HK
Abstract: TS3332LD XP1013 XP1013-BD XP1013-BD-000V XP1013-BD-EV1
Text: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013-BD August 2007 - Rev 08-Aug-07 Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1013-BD
08-Aug-07
MIL-STD-883
XP1013-BD
XP1013-BD-000V
XP1013-BD-EV1
XP1013
DM6030HK
TS3332LD
XP1013-BD
XP1013-BD-000V
XP1013-BD-EV1
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PDF
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84-1LMI
Abstract: P1013
Text: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1013
05-May-05
MIL-STD-883
84-1LMI
P1013
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PDF
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XP1013-BD
Abstract: DM6030HK TS3332LD XP1013 XP1013-BD-000V XP1013-BD-EV1
Text: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013-BD August 2007 - Rev 08-Aug-07 Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1013-BD
08-Aug-07
MIL-STD-883
XP1013-BD
XP1013-BD-000V
XP1013-BD-EV1
XP1013
XP1013-BD
DM6030HK
TS3332LD
XP1013-BD-000V
XP1013-BD-EV1
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PDF
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Untitled
Abstract: No abstract text available
Text: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing
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Original
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05-May-05
P1013
MIL-STD-883
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PDF
|
Untitled
Abstract: No abstract text available
Text: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing
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Original
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05-May-05
P1013
MIL-STD-883
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PDF
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