Untitled
Abstract: No abstract text available
Text: SN74LVC2G66 DUAL BILATERAL ANALOG SWITCH www.ti.com SCES325J – JULY 2001 – REVISED FEBRUARY 2007 FEATURES • • • • • • • Available in the Texas Instruments NanoFree Package 1.65-V to 5.5-V VCC Operation Inputs Accept Voltages to 5.5 V Max tpd of 0.8 ns at 3.3 V
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SN74LVC2G66
SCES325J
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Untitled
Abstract: No abstract text available
Text: OMAP3515/03 Applications Processor www.ti.com SPRS505C – FEBRUARY 2008 – REVISED FEBRUARY 2009 1 OMAP3515/03 Applications Processor • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • 600-MHz ARM Cortex™-A8 Core
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OMAP3515/03
SPRS505C
600-MHz
OMAP3515
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LP2985A-10
Abstract: LP2985A-10DBVR LP2985-10
Text: LP2985 www.ti.com . SLVS522M – JULY 2004 – REVISED MARCH 2009 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN
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LP2985
SLVS522M
150-mA
10-nF
000-V
A114-A)
200-face
LP2985A-10
LP2985A-10DBVR
LP2985-10
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tms 320c67x
Abstract: 320C6701 SPRU580
Text: SM320C6701ĆEP, SM320C6701MECHĆEP FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS042A − MAY 1998 − REVISED APRIL 2004 D Controlled Baseline D D D D D D D D 1M-Bit On-Chip SRAM − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance up to
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SM320C6701EP,
SM320C6701MECHEP
SGUS042A
320C6701
167-MHz
32-Bit
320C6201
tms 320c67x
SPRU580
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SN74LVC02A-EP
Abstract: No abstract text available
Text: SN74LVC02A-EP QUADRUPLE 2-INPUT POSITIVE-NOR GATE www.ti.com SCAS831 – MARCH 2007 FEATURES • • • • • • • • 1 Controlled Baseline – One Assembly Site – One Test Site – One Fabrication Site Extended Temperature Performance of –55°C
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SN74LVC02A-EP
SCAS831
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95N3LLH6
Abstract: 95n3l STP95N3LLH6 STB95N3LLH6 STD95N3LLH6 152-28 15228 STD95N3L
Text: STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 N-channel 30 V, 0.0037 Ω , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID 30 V 0.0042 Ω STD95N3LLH6 30 V 0.0042 Ω 80 A STP95N3LLH6 30 V 0.0042 Ω
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STB95N3LLH6,
STD95N3LLH6
STP95N3LLH6,
STU95N3LLH6
O-220
STP95N3LLH6
STB95N3LLH6
95N3LLH6
95n3l
STP95N3LLH6
STB95N3LLH6
STD95N3LLH6
152-28
15228
STD95N3L
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OPA355
Abstract: OPA627 OPA655 OPA656 OPA656U OPA656UB OPA657 THS4601
Text: OPA656 OPA 656 www.ti.com SBOS196G – DECEMBER 2001 – REVISED NOVEMBER 2008 Wideband, Unity-Gain Stable, FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● ● The OPA656 combines a very wideband, unity-gain stable, voltage-feedback op amp with a FET-input stage to offer an
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OPA656
SBOS196G
OPA656
500MHz
OPA355
OPA627
OPA655
OPA656U
OPA656UB
OPA657
THS4601
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AZ5485
Abstract: QFN-64 QFN-64 thermal resistance AZ5484 QFN-64 footprint
Text: ADS5484 ADS5485 www.ti.com. SLAS610B – AUGUST 2008 – REVISED JULY 2009 16-Bit, 170/200-MSPS Analog-to-Digital Converters
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ADS5484
ADS5485
SLAS610B
16-Bit,
170/200-MSPS
16-Bit
ADS5483/5482/5481,
135/105/80-MSPS
QFN-64
AZ5485
QFN-64 thermal resistance
AZ5484
QFN-64 footprint
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2N6039
Abstract: 2N6036 2n60 5064 DIODE
Text: 2N6036 2N6039 Complementary power Darlington transistors Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications 3 ■ Linear and switching industrial equipment
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2N6036
2N6039
OT-32
2N6039
2N6036
2n60
5064 DIODE
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Untitled
Abstract: No abstract text available
Text: STPS20L120C Power Schottky rectifier Features • High junction temperature capability ■ Avalanche capability specified ■ Low forward voltage drop current ■ High frequency operation ■ Insulated package – TO-220FPAB Insulating voltage = 1500 V rms
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STPS20L120C
O-220FPAB
O-220AB
O-220FPAB,
O-220AB
STPS20L120CT
STPS20L120CFP
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L9374
Abstract: No abstract text available
Text: L9374 Four channel valve driver Data brief Features • ■ ■ ■ ■ ■ ■ ■ Four low-side output drivers with protection diagnostic – 2 PWM controlled channels 0.2 Ω typ. – 2 current controlled channels with 6 % accuracy (0.3 Ω typ.) All outputs with 35 V zener clamp
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L9374
PowerSO-36
L9374
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AN2684
Abstract: Automotive HSD Connector opto isolator IEC61000-4-4 IFP006V1 VNI4140K SMD diode t4 t6 APPENDIX A TTL IC CONNECTION DIAGRAM led diode smd RELAY IC
Text: AN2684 Application note STEVAL-IFP006V1: designing with VNI4140K quad high-side smart power solid-state relay ICs Introduction The STEVAL-IFP006V1 demonstration board has been developed to show the new VNI4140K device functionalities within industrial applications such as PLCs programmable
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AN2684
STEVAL-IFP006V1:
VNI4140K
STEVAL-IFP006V1
STEVAL-IFP006V1
AN2684
Automotive HSD Connector
opto isolator
IEC61000-4-4
IFP006V1
SMD diode t4 t6
APPENDIX A TTL IC CONNECTION DIAGRAM
led diode smd
RELAY IC
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Untitled
Abstract: No abstract text available
Text: SM320F2810-EP, SM320F2811-EP, SM320F2812-EP SM320C2810-EP, SM320C2811-EP, SM320C2812-EP Digital Signal Processors Data Manual Literature Number: SGUS051A March 2004 − Revised October 2004 This document contains information on products in more than one phase of
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SM320F2810-EP,
SM320F2811-EP,
SM320F2812-EP
SM320C2810-EP,
SM320C2811-EP,
SM320C2812-EP
SGUS051A
SM320F2812
S-PQFP-G176)
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marking 4ur
Abstract: No abstract text available
Text: TPD4S009 TPD4S010 www.ti.com. SLVS817C – MAY 2008 – REVISED MAY 2009 4-CHANNEL ESD SOLUTION FOR HIGH-SPEED DIFFERENTIAL INTERFACE
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TPD4S009
TPD4S010
SLVS817C
marking 4ur
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Untitled
Abstract: No abstract text available
Text: SN74LV74A-EP DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOPS www.ti.com SCLS696 – JANUARY 2006 FEATURES • • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of– 55°C
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SN74LV74A-EP
SCLS696
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PH416
Abstract: No abstract text available
Text: TCA6416A www.ti.com . SCPS194 – MAY 2009 LOW-VOLTAGE 16-BIT I2C AND SMBus I/O EXPANDER
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TCA6416A
SCPS194
16-BIT
PH416
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LC1 b12 01
Abstract: No abstract text available
Text: SMJ320C80 DIGITAL SIGNAL PROCESSOR SGUS025B − AUGUST 1998 − REVISED JUNE 2002 D Single-Chip Parallel Multiple D D D D D D D D D D D D Instruction / Multiple Data MIMD Digital Signal Processor (DSP) More Than Two Billion RISC-Equivalent Operations per Second
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SMJ320C80
SGUS025B
32-Bit
IEEE-754
64-Bit
LC1 b12 01
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Untitled
Abstract: No abstract text available
Text: SM320C6201ĆEP FIXEDĆPOINT DIGITAL SIGNAL PROCESSOR SGUS041A − MAY 2003 − REVISED JANUARY 2004 D Controlled Baseline D D D D D D D D 1M-Bit On-Chip SRAM − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 105°C
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SM320C6201EP
SGUS041A
SM320C6201
200-MHz
32-Bit
TMS320C62x
32-/40-Bit)
16-Bit
32face
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pwm 1001 dil
Abstract: bq2450
Text: bq24150A bq24151A www.ti.com . SLUS931 – APRIL 2009 Fully Integrated Switch-Mode One-Cell Li-Ion Charger
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bq24150A
bq24151A
SLUS931
pwm 1001 dil
bq2450
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Untitled
Abstract: No abstract text available
Text: EMIF08-LCD04M16 8-line L-C IPAD , EMI filter and ESD protection in Micro QFN Features • High cut off frequency low-pass filter: FC = 400 MHz at -6 dB ■ High efficiency in EMI filtering: better than -35 dB from 900 MHz to 2 GHz ■ Very low PCB space consuming with plastic
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EMIF08-LCD04M16
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Untitled
Abstract: No abstract text available
Text: SMJ320C40, TMP320C40 DIGITAL SIGNAL PROCESSORS SGUS017H − OCTOBER 1993 − REVISED OCTOBER 2001 D D D D D D D D D D D D D SMJ: QML Processing to MIL−PRF−38535 SM: Standard Processing TMP: Commercial Level Processing TAB Operating Temperature Ranges:
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SMJ320C40,
TMP320C40
SGUS017H
C40-60:
33-ns
C40-50:
40-ns
C40-40:
50-ns
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PWSSO36
Abstract: PowerSSO-36 POWERSsO36 L9374 L9374XP D3532 ESD valve
Text: L9374 Four channel valve driver Data brief Features • ■ ■ ■ ■ ■ ■ ■ Four low-side output drivers with protection diagnostic – 2 PWM controlled channels 0.2 Ω typ. – 2 current controlled channels with 6 % accuracy (0.3 Ω typ.) All outputs with 35 V zener clamp
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L9374
L9374
PWSSO36
PowerSSO-36
POWERSsO36
L9374XP
D3532
ESD valve
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transimpedance amplifier 7.5 GHz
Abstract: No abstract text available
Text: RHF330 Rad-hard 1 GHz low noise operational amplifier Datasheet − production data Features • Bandwidth: 1 GHz gain = +2 ■ Slew rate: 1800 V/µs Pin connections (top view) 1 8 ■ Input noise: 1.3 nV/√ Hz NC ■ Distortion: SFDR = -78 dBc (10 MHz, 2 Vpp)
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RHF330
MIL-STD-883
RHF330
transimpedance amplifier 7.5 GHz
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Untitled
Abstract: No abstract text available
Text: STD45NF75 N-channel 75 V, 0.018 Ω, 40 A DPAK STripFET II Power MOSFET Features Type VDSS RDS on max ID STD45NF75 75 V < 0.024 Ω 40 A(1) 1. Current limited by package • 100% avalanche tested ■ Gate charge minimized 3 1 DPAK Application ■ Switching applications
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STD45NF75
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