Untitled
Abstract: No abstract text available
Text: Si5476DU New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.034 at VGS = 10 V 12 0.041 at VGS = 4.5 V 12 VDS (V) 60 Qg (Typ) 10 5 nC 10.5 PowerPAKr ChipFETr Single D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5476DU
08-Apr-05
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Abstract: No abstract text available
Text: Si5424DC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.024 at VGS = 10 V 6 0.030 at VGS = 4.5 V 6 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET APPLICATIONS 11 nC RoHS COMPLIANT D Load Switch – Notebook PC
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Si5424DC
18-Jul-08
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KBP210 bridge rectifier
Abstract: KBP210 KBP206 Bridge Rectifiers KBP-204 KBP206 KBP2005 KBP201 KBP202 KBP204
Text: KBP2005 thru KBP210 Glass Passivated Bridge Rectifiers REVERSE VOLTAGE 50 to 1000 VOLTS FORWARD CURRENT 2.0 AMPERES P b Lead Pb -Free Features: * Surge overload rating - 60 amperes peak * Ideal for printed circuit board * High case dielectric strength * Reliable low cost construction utilizing molded plastic technique
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KBP2005
KBP210
MIL-STD-202,
20-Feb-06
KBP210 bridge rectifier
KBP210
KBP206 Bridge Rectifiers
KBP-204
KBP206
KBP201
KBP202
KBP204
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SI5476DU-T1-E3
Abstract: Si5476DU
Text: Si5476DU New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.034 at VGS = 10 V 12 0.041 at VGS = 4.5 V 12 VDS (V) 60 Qg (Typ) 10 5 nC 10.5 PowerPAKr ChipFETr Single D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5476DU
08-Apr-05
SI5476DU-T1-E3
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EA-XX-015DJ-120
Abstract: EP-08-015DJ-120 015EH constantan sa Series 015DJ
Text: 015DJ Vishay Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 EA-XX-015DJ-120 EP-08-015DJ-120 SA-XX-015DJ-120 SK-XX-015DJ-120 120 ± 0.3%
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015DJ
EA-XX-015DJ-120
EP-08-015DJ-120
SA-XX-015DJ-120
SK-XX-015DJ-120
015EH
08-Apr-05
EA-XX-015DJ-120
EP-08-015DJ-120
constantan
sa Series
015DJ
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EP-08-062AK-120
Abstract: 062AP EA-XX-062AK-120 ED-DY-062AK-350 062AK
Text: 062AK Vishay Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1 See Note 2 See Note 3 EA-XX-062AK-120 ED-DY-062AK-350 EP-08-062AK-120 120 ± 0.15% 350 ± 0.4% 120 ± 0.15%
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062AK
EA-XX-062AK-120
ED-DY-062AK-350
EP-08-062AK-120
062AP
08-Apr-05
EP-08-062AK-120
EA-XX-062AK-120
ED-DY-062AK-350
062AK
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CEA-XX-062UW-350
Abstract: 062UW CEA-XX-062UW-120 strain Gages CEA strain gage
Text: 062UW Vishay Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-062UW-120 CEA-XX-062UW-350 120 ± 0.3% 350 ± 0.3% P2 P2 DESCRIPTION General-purpose gage. Exposed solder tab area is 0.07
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062UW
CEA-XX-062UW-120
CEA-XX-062UW-350
08-Apr-05
CEA-XX-062UW-350
062UW
CEA-XX-062UW-120
strain Gages CEA
strain gage
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74147
Abstract: 74147 datasheet application notes of 74147 semiconductor 74147 p-channel mosfet Siliconix Si4567DY SI4567
Text: SPICE Device Model Si4567DY Vishay Siliconix Dual N- and P-Channel 40-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4567DY
S-60243Rev.
20-Feb-06
74147
74147 datasheet
application notes of 74147
semiconductor 74147
p-channel mosfet
Siliconix
SI4567
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Si4890DY
Abstract: No abstract text available
Text: SPICE Device Model Si4890DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4890DY
18-Jul-08
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Si7894ADP
Abstract: No abstract text available
Text: SPICE Device Model Si7894ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7894ADP
18-Jul-08
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SUR50N024-06P
Abstract: 73019
Text: SPICE Device Model SUR50N024-06P Vishay Siliconix N-Channel 20-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUR50N024-06P
18-Jul-08
SUR50N024-06P
73019
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Si4836DY
Abstract: No abstract text available
Text: SPICE Device Model Si4836DY Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4836DY
18-Jul-08
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Si4838DY
Abstract: No abstract text available
Text: SPICE Device Model Si4838DY Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4838DY
18-Jul-08
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Si7909DN
Abstract: No abstract text available
Text: SPICE Device Model Si7909DN Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7909DN
18-Jul-08
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Si4872DY
Abstract: No abstract text available
Text: SPICE Device Model Si4872DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4872DY
18-Jul-08
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Si4876DY
Abstract: No abstract text available
Text: SPICE Device Model Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4876DY
18-Jul-08
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Si7804DN
Abstract: No abstract text available
Text: SPICE Device Model Si7804DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7804DN
18-Jul-08
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TN0201KL
Abstract: No abstract text available
Text: SPICE Device Model TN0201KL Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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TN0201KL
18-Jul-08
TN0201KL
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Si4872DY
Abstract: No abstract text available
Text: SPICE Device Model Si4872DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4872DY
S-60245Rev.
20-Feb-06
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Si7852DP
Abstract: No abstract text available
Text: SPICE Device Model Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7852DP
S-60245Rev.
20-Feb-06
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MS75088
Abstract: dale molded inductors LT10K MS75087 MIL-PRF-15305 MS-75087
Text: MS75087 / MS75088 Vishay Dale Inductors Military, MIL/PRF/15305 Qualified, Type LT Molded, Shielded FEATURES INDUCTANCE RANGE AND MILITARY STANDARD • Wide inductance range in small package • Flame retardant coating • Electromagnetic shield - finest shield available
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MS75087
MS75088
MIL/PRF/15305
MS75087
18-Jul-08
MS75088
dale molded inductors
LT10K
MIL-PRF-15305
MS-75087
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Untitled
Abstract: No abstract text available
Text: AMP 1 4 7 1 -9 REV 3 1 M A R 2 0 0 0 1 2 LOC CE D IS T REVI SI ONS 16 LTR A 1. INSER TION LOS S: D E S C R IP T IO N DWN DATE RELEASED 20FEB06 1.0 0 dB APVD JWD DF MAX. D 2. PRODUCT AND PROCESSING MUST MEET REQUIREMENTS OF TYCO ELECTRONICS STANDARD 2 3 0 - 7 0 2
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20FEB06
600um,
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micro switch BA-2r
Abstract: FIC093346 L145
Text: MICRO SWITCH P*eePO «T CATALOG ILLINOIS. U S A B A -2 R - A 4 SWITCH- BASIC A D I VI SI ON O P H O N E Y W E L L LISTING ABF5000 FEO . M f l . COOK *112 » <3 - < I c r ^ CvJu. 7 I ° .64 CD'S operating POSITION J. < CL « z a: w *o ìz 5I *l4 0 t ‘ o o f D ,A H 0 L E A
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ABF5000
FIC093346
20FEB06
FORCE------14-22
FORCE-------10
micro switch BA-2r
FIC093346
L145
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS U N PU BLISH ED . RELEASED COPYRIGHT 2 3 FOR PUBLICATION - - ALL RIGHTS RESERV ED . BY TYCO ELECTRONICS CORPORATION. LOC DIST GP 00 REVISIO N S LTR DESCRIPTION C 27.10 [1.067 /6\D A TE CODE DATE REVISED PER ECO-06-026648 DWN 13NOV06 APVD
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ECO-06-026648
13NOV06
20FEB06
31MAR2000
360x360x350
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