l0629
Abstract: 20DBL0629 84-1LMI A102 395 2XF
Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier September 2005 - Rev 01-Sep-05 20DBL0629 Features Chip Device Layout tio n Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression
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Original
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PDF
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01-Sep-05
20DBL0629
MIL-STD-883
l0629
20DBL0629
84-1LMI
A102
395 2XF
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Untitled
Abstract: No abstract text available
Text: XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Features Rev. V1 Chip Device Layout • Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC & Output Power Testing
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Original
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PDF
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XX1001-BD
Mil-Std-883
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20DBL0629
Abstract: XX1001-BD XX1001-BD-000V XX1001-BD-EV1
Text: XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Features Rev. V1 Chip Device Layout • Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC & Output Power Testing
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Original
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PDF
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XX1001-BD
Mil-Std-883
20DBL0629
XX1001-BD
XX1001-BD-000V
XX1001-BD-EV1
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20DBL0629
Abstract: DM6030HK TS3332LD XX1001-BD XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 X1001-BD 395 2XF
Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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26-Jan-07
X1001-BD
MIL-STD-883
XX1001-BD-000V
XX1001-BD-000W
XX1001-BD-EV1
XX1001
20DBL0629
DM6030HK
TS3332LD
XX1001-BD
XX1001-BD-000V
XX1001-BD-000W
XX1001-BD-EV1
X1001-BD
395 2XF
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Untitled
Abstract: No abstract text available
Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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26-Jan-07
X1001-BD
MIL-STD-883
XX1001-BD-000V
XX1001-BD-000W
XX1001-BD-EV1
XX1001
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Untitled
Abstract: No abstract text available
Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier March 2008 - Rev 18-Mar-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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18-Mar-08
X1001-BD
MIL-STD-883
deviceX1001-BD-000W
XX1001-BD-EV1
XX1001
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XX1001-BD-EV1
Abstract: 20DBL0629 DM6030HK TS3332LD XX1001-BD XX1001-BD-000V
Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier November 2008 - Rev 03-Nov-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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03-Nov-08
X1001-BD
Mil-Std-883
XX1001-BD-000V
XX1001-BD-EV1
XX1001
XX1001-BD-EV1
20DBL0629
DM6030HK
TS3332LD
XX1001-BD
XX1001-BD-000V
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Untitled
Abstract: No abstract text available
Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier October 2006 - Rev 04-Oct-06 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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04-Oct-06
X1001-BD
MIL-STD-883
XX1001-BD-000V
XX1001-BD-000W
XX1001-BD-EV1
XX1001
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