20DBL0629 Search Results

20DBL0629 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
20DBL0629		Mimix Broadband	18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier		Original	PDF

20DBL0629 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
l0629 Abstract: 20DBL0629 84-1LMI A102 395 2XF Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier September 2005 - Rev 01-Sep-05 20DBL0629 Features Chip Device Layout tio n Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression	Original	01-Sep-05 20DBL0629 MIL-STD-883 l0629 20DBL0629 84-1LMI A102 395 2XF	PDF
Untitled Abstract: No abstract text available Text: XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Features Rev. V1 Chip Device Layout •      Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC & Output Power Testing	Original	XX1001-BD Mil-Std-883	PDF
20DBL0629 Abstract: XX1001-BD XX1001-BD-000V XX1001-BD-EV1 Text: XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Features Rev. V1 Chip Device Layout •      Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC & Output Power Testing	Original	XX1001-BD Mil-Std-883 20DBL0629 XX1001-BD XX1001-BD-000V XX1001-BD-EV1	PDF
20DBL0629 Abstract: DM6030HK TS3332LD XX1001-BD XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 X1001-BD 395 2XF Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	26-Jan-07 X1001-BD MIL-STD-883 XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 XX1001 20DBL0629 DM6030HK TS3332LD XX1001-BD XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 X1001-BD 395 2XF	PDF
Untitled Abstract: No abstract text available Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	26-Jan-07 X1001-BD MIL-STD-883 XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 XX1001	PDF
Untitled Abstract: No abstract text available Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier March 2008 - Rev 18-Mar-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	18-Mar-08 X1001-BD MIL-STD-883 deviceX1001-BD-000W XX1001-BD-EV1 XX1001	PDF
XX1001-BD-EV1 Abstract: 20DBL0629 DM6030HK TS3332LD XX1001-BD XX1001-BD-000V Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier November 2008 - Rev 03-Nov-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	03-Nov-08 X1001-BD Mil-Std-883 XX1001-BD-000V XX1001-BD-EV1 XX1001 XX1001-BD-EV1 20DBL0629 DM6030HK TS3332LD XX1001-BD XX1001-BD-000V	PDF
Untitled Abstract: No abstract text available Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier October 2006 - Rev 04-Oct-06 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	04-Oct-06 X1001-BD MIL-STD-883 XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 XX1001	PDF