ct60am
Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic
Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V
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CT60AM-18B
20MAX.
ct60am
resonant inverter
CT60AM-18B
MITSUBISHI Microwave Transistors
IGBT 900v 60a
8600V
TRANSISTOR ct60am
microwave inverter ic
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2SD2141
Abstract: 2SD2141 equivalent FM20 DMS-10
Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA
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2SD2141
Pulse10)
10max
20max
1500min
20typ
95typ
O220F)
150x150x2
100x100x2
2SD2141
2SD2141 equivalent
FM20
DMS-10
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2SD2141 equivalent
Abstract: 2SD2141 FM20 DMS-10
Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA
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2SD2141
Pulse10)
10max
20max
1500min
20typ
95typ
O220F)
120mA
2SD2141 equivalent
2SD2141
FM20
DMS-10
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DUP3
Abstract: 40mhz telephone transmitter rf traNsmitter receiver 40mhz DRU5 RF output cordless phone
Text: TYPE Duplexers for Cordless Phone DRU5 DUP3 コードレス電話用デュプレクサ TYPE DRU5, DUP3 DUP3 For US, Asia DRU5 For US, Asia 11.0Max. 8.8Max. 6.0 8Max. 3.5 12Max. 20Max. 7.6 25.1 19.3 28.2Max. 8.8 φ0.7 2.7 5.6 φ0.7 Unit: mm (Unit: mm) Features
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12Max.
20Max.
40MHz~
97MHz
99MHz
DUP3
40mhz telephone transmitter
rf traNsmitter receiver 40mhz
DRU5
RF output cordless phone
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TO-3PL
Abstract: PRSS0004ZC-A
Text: Previous Code T3PL RENESAS Code PRSS0004ZC-A MASS[Typ.] 9.8g 20Max Unit: mm 5 6 2 26 φ3.2 1 2 20.6Min JEITA Package Code ⎯ 2.5 Package Name TO-3PL* 1 0.5 5.45 5.45 4.0 3
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PRSS0004ZC-A
20Max
TO-3PL
PRSS0004ZC-A
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Untitled
Abstract: No abstract text available
Text: 14/25 001-01 / 20030224 / e93_tf.fm EMC Components TF Series Common Mode Choke Coils(Line Filters) for AC Power Supply Toroidal Core Type TF2527VU(VERTICAL TYPE WITH TERMINAL BASE) TYPE SHAPES AND DIMENSIONS/CIRCUIT DIAGRAM 20max. ød (15) 1 4 2 3 TF2527VU-302Y3R0-01
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TF2527VU
20max.
27max.
TF2527VU-302Y3R0-01
25max.
TF2527VU-102Y6R0-01
TF2527VU-302Y2R0-01
TF2527VU-102Y3R0-01
TF2527VU-102Y5R0-01
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MN638S
Abstract: ic 3A hfe 500
Text: Power Transistor MN638S Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA External Dimensions TO220S 4.44±0.2 10.2±0.3 1.3±0.2 V a +0.3 ICBO IEBO V BR CEO hFE VCE (sat) (Ta=25ºC) Unit µA mA V Ratings 10max 20max 330 to 430 1500min
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MN638S
10max
20max
1500min
O220S
150mA
120mA
MN638S
ic 3A hfe 500
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CT60AM-18F
Abstract: CT60am IGBT ct60am18f IGBT CT60AM IGBT 900v 60a IGBT 60A IGBT tail time
Text: MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 ● VCES . 900V
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CT60AM-18F
20MAX.
CT60AM-18F
CT60am IGBT
ct60am18f
IGBT CT60AM
IGBT 900v 60a
IGBT 60A
IGBT tail time
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2SD1769
Abstract: No abstract text available
Text: 2SD1769 Silicon NPN Triple Diffused Planar Transistor Unit Conditions 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 20max mA 6 V V BR CEO 6(Pulse10) A hFE IC=10mA 120min VCE=2V, IC=3A 2000min 10.2±0.2 V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C)
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2SD1769
MT-25
10max
20max
Pulse10)
100typ
2SD1769
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DIODE 10D2
Abstract: CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1
Text: MITSUBISHI MITSUBISHI NchNch IGBT IGBT CT60AM-18F CT60AM-18F INSULATED INSULATED GATE GATE BIPOLAR BIPOLAR TRANSISTOR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 4.0 ● VCES . 900V
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CT60AM-18F
20MAX.
DIODE 10D2
CT60AM-18F
102 TRANSISTOR
bipolar transistor
DIODE 10D1
IGBT 900v 60a
IGBT tail time
IGBT CT60AM
10d1
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CT60AM-18F
Abstract: IGBT 900v 60a ct60am18F ct60am DSA007480
Text: MITSUBISHI Nch IGBT ARY CT60AM-18F MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN.
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CT60AM-18F
20MAX.
CT60AM-18F
IGBT 900v 60a
ct60am18F
ct60am
DSA007480
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b514
Abstract: DNQ10 DNQ10JS
Text: Power Brushless Motor DNQ10JS Standard Dimensions mm 28 23.3 5.2 3.2 R 5M 28 23.3 IN B51.4 B20 28 23.3 61MAX 4-B4.5 29 B23.7MAX 28 23.3 (15) 5.5 20MAX Component area Typical Data Model DNQ10JS Rated Rated Voltage Speed (V) (min-1) (gf á cm) (mN á m) (mA)
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DNQ10JS
61MAX
20MAX
b514
DNQ10
DNQ10JS
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2SD2141
Abstract: No abstract text available
Text: Power Transistor 2SD2141 Test Conditions VCB = 330V VEB = 6V IC = 25mA VCE = 2V, IC = 3A IC = 4A, IB = 20mA VCE = 12V, IE = –0.5A VCB = 10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat ) fT COB Ratings 10max 20max 330 to 430 1500min 1.5max 20typ 95typ (Ta=25ºC)
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2SD2141
10max
20max
1500min
20typ
95typ
2SD2141
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IGBT tail time
Abstract: IGBT 900v 60a CT90AM-18 MJ 545 transistor
Text: MITSUBISHI IGBT MITSUBISHI NchNch IGBT CT90AM-18 CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR CT90AM-18 OUTLINE DRAWING Dimensions in mm 5 20MAX. 6 2 φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 ● VCES . 900V
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CT90AM-18
20MAX.
IGBT tail time
IGBT 900v 60a
CT90AM-18
MJ 545 transistor
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TQFP176
Abstract: No abstract text available
Text: TQFP176-P-2424-0.50 1, 25TYP ro en O O, 1 4 5 í8; 045 o CJI ro ro ro en o -j^ i+ o o o o ro i+ i+ o ro o o ro ro 1 + pp □o -i^cn o o e o 00 o 0, 10±0, 05 1, 025±0, 05 1, 20MAX CJI 24, 00±0, 1 26, 0 0 ± 0 , 2 ö" ro CD CD Uniti m ~n
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TQFP176-P-2424-0
25TYP
TQFP176
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Untitled
Abstract: No abstract text available
Text: TYPE 20 6DFSC E8TO N O om Dielectric Fillers TYPE 6DFSC 4 Pole Type Frequency Range: 8 0 0 -1 500MHz Temperature Range: - 40°C + 85°C 20Max. JTU Tolerance: ±0.5 (Unit: mm) 6.5 10.7 * : Depends on Center Frequency, Characteristics fétìtìig 6DFSC-836E-12T
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500MHz
20Max.
6DFSC-836E-12T
6DFSC-836E-12T
6DFSC-920C-10
6DPK-836E881E-12T.
-836E
-12TI
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TFBGA56
Abstract: No abstract text available
Text: 1. 20MAX - M O . 10 ISI •ij-ULum-u uiu u u u u u — h o . 10ISI OOOOiOO oooolooöo o o _ o _ o {o _ o _ o o _ OOÒOOÓOO oooo|oooo o o o 0 : 6 o o -e 0 0 -e -o - 10780] 104 0 ] 10760] 1
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P-TFBGA56-0710-0
20MAX
TFBGA56
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Untitled
Abstract: No abstract text available
Text: TYPE 6DFSC Dielectric Fitters 7 TYPE 6DFSC 4 Pole Type Frequency Range: 800-1500M Hz Temperature Range: -25 C to +85°C 20Max - Characteristics 6DFSC-836E-11T STANDARD DEVICES SELECTION GUIDE The Part Numbers shown in the table below are standard devices which are
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800-1500M
20Max
6DFSC-836E-11T
6DFSC-836E-12T
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WDJ36
Abstract: No abstract text available
Text: Shanghai Haizhi Trade Co.,Ltd 20max 3 4 + 0.5 1.6+0.l T— IOO 19 + 0. 5 o o o o 8 <X5 0 . 4 + 0.4 1.5 CD LO ¡S CO CO lO ^ L ± 0.3 10<LsS 100 + 0.5 m ma 30<L=S100 + 1.0 mm it 1 2 3 #-%• h m & ih ft # nm ±5" ^Êl mm HI &m WDJ36-1 it!l 111
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20max
WDJ36-1
LsS100
WDJ36
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Untitled
Abstract: No abstract text available
Text: P—TFBGA85—0710—0.80DZ U n it mn 1. 20MAX. [7701 o •0. g6±0. 04 i/i W £ tJ OB. C o Ò o o o o H O O o o o o _o _o o ö o o o o o o o o o o / o o o o o o o o o o 'ö o o o o <p io 'o lo _ fö !o |o :o |o i o o o C) C) o <p O O D o o o o o _eo "o o '
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kbl00
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Untitled
Abstract: No abstract text available
Text: P—TFBGA48—0608—0.80AZ Uniti mn . 20MAX •4— j, 33±0, 05 ITÖÖ1 ro~4gi ipm oooôôè 1 3X 0 O O O O OOOiOOO _o oplo_o_eo o o]o Ö o' sa ooolooo ooo|ooe- o o o io o e £2 INDEX r Jan.2004
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P-TFBGA48-0608-0
20MAX
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. « @ LJ/ 0.5 5.45 5.45 • V c e s . 900V o © • le .60A
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CT60AM-18F
20MAX.
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z308
Abstract: No abstract text available
Text: P—TFBGA85—0710—0.80CZ U n it mn 1. 20MAX o -D. 33±0. 04 W £ tJ O B . OO oo oooo OOOO o o o o o C H O O O p o o cp ooooioooo o_o_o olo_o o_eo ö o"ö[ö o o o' ooooloooo oooo|oooo oooopoo /o o o o|o o-e-eo o i -e-e- Apr .2004
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XVW02
z308
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IGBT CT60AM
Abstract: CT60AM-18F
Text: MITSUBISHI Neh IGBT CT60AM-18F -3 ;' \> V.aI i«'ai.Ssv>w8tì' 0 soW INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. <>3.2 •— D 0.5 5.45 5.45 • V c e s .900V
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CT60AM-18F
20MAX.
IGBT CT60AM
CT60AM-18F
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