SEMICONDUCTOR a1040
Abstract: marking xu 6hp04 A10401
Text: 6HP04S Ordering number : ENA1040A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 6HP04S General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage
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6HP04S
ENA1040A
PW10s,
145mm80mm1
A1040-4/4
SEMICONDUCTOR a1040
marking xu
6hp04
A10401
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A1041
Abstract: 6hp04 A10411
Text: 6HP04SS Ordering number : ENA1041 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 6HP04SS General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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6HP04SS
ENA1041
PW10s,
145mm80mm1
A1041-4/4
A1041
6hp04
A10411
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a1044
Abstract: A1044-1 A10441
Text: SCH2311 Ordering number : ENA1044 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2311 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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SCH2311
ENA1044
PW10s,
900mm20
A1044-4/4
a1044
A1044-1
A10441
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Untitled
Abstract: No abstract text available
Text: MCH6655 Ordering number : ENA1043 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6655 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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MCH6655
ENA1043
PW10s,
900mm20
A1043-4/4
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A1045
Abstract: No abstract text available
Text: VEC2905 注文コード No. N A 1 0 4 5 三洋半導体データシート N VEC2905 PNP エピタキシァルプレーナ型シリコントランジスタ P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
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VEC2905
900mm2
20608PE
TC-00001176
A1045-1/6
IT06424
--12A
A1045
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A1039
Abstract: A10391 6hp04 6HP04CH A10393
Text: 6HP04CH Ordering number : ENA1039 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 6HP04CH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage
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6HP04CH
ENA1039
PW10s,
900mm20
A1039-4/4
A1039
A10391
6hp04
6HP04CH
A10393
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transistor A1045
Abstract: FET MARKING QG tr fet 1A tr fet 2A RL66
Text: VEC2905 Ordering number : ENA1045 SANYO Semiconductors DATA SHEET VEC2905 PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Composite type, facilitatiing high-density mounting. Mounting height 0.75mm.
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VEC2905
ENA1045
A1045-6/6
transistor A1045
FET MARKING QG
tr fet 1A
tr fet 2A
RL66
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it1327
Abstract: A1044 A1044-1 A10441
Text: SCH2311 注文コード No. N A 1 0 4 4 三洋半導体データシート N SCH2311 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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SCH2311
900mm2
--30V
--120mA
IT10873
900mm2
IT13272
it1327
A1044
A1044-1
A10441
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1039A 6HP04CH P-Channel Small Single MOSFET –60V, –370mA, 4.2Ω, Single CPH3 http://onsemi.com Features • • • 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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ENA1039A
6HP04CH
370mA,
900mm2Ã
A1039-5/5
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A1043
Abstract: No abstract text available
Text: MCH6655 注文コード No. N A 1 0 4 3 三洋半導体データシート N MCH6655 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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MCH6655
900mm2
--30V
--120mA
IT10873
900mm2
IT13271
A1043
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a1042
Abstract: A1042-3 A10421 EC4308C
Text: EC4308C Ordering number : ENA1042 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4308C General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C
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EC4308C
ENA1042
PW10s,
145mm80mm1
A1042-4/4
a1042
A1042-3
A10421
EC4308C
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