Untitled
Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS Technical Data Data Sheet N1188, Rev. A 201CNQ SERIES Green Products 201CNQ035/201CNQ040/201CNQ045/201CNQ050 SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes
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N1188,
201CNQ
201CNQ035/201CNQ040/201CNQ045/201CNQ050
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diode 954
Abstract: 201CN tt 5200
Text: tSENSITRON 201CNQ035 201CNQ040 201CNQ045 SEMICONDUCTOR TECHNICAL DATA DATA SHEET, 954, REV. - PLASTIC POWER SCHOTTKY RECTIFIER 35/40/45 V, 200 A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
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201CNQ035
201CNQ040
201CNQ045
diode 954
201CN
tt 5200
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MBR20030CTL
Abstract: MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045
Text: tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 890, REV. A Plastic Schottky Rectifier Product Catalog New Package! TO-247 Featuring: High Current/Leaded and Surface Mount Package Types SENSITRON SEMICONDUCTOR PLASTIC SCHOTTKY RECTIFIERS Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
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O-247
NQ045
403CNQ080
403CNQ100
60CNQ045SL
61CNQ045SL
62CNQ030SL
63CNQ100SL
69CNQ135SL
69CNQ150SL
MBR20030CTL
MBR20050CT
MBR30050CT
MBR30045CT
MBR20015CTL
200CNQ030
244N
MBR1605
SPD115417A
fst30045
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201CNQ045
Abstract: 201CNQ 201CNQ035 201CNQ040 40HFL40S02 IRFP460
Text: PD-2.258 rev. A 12/97 201CNQ. SERIES SCHOTTKY RECTIFIER 200 Amp Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 201CNQ. Units The 201CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.
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201CNQ.
201CNQ
IRFP460
40HFL40S02
201CNQ045
201CNQ035
201CNQ040
40HFL40S02
IRFP460
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201CNQ045
Abstract: IRFP460 201CNQ 201CNQ035 201CNQ040
Text: Buletin PD-2.258 rev. B 07/00 201CNQ. SERIES SCHOTTKY RECTIFIER 200 Amp TO-244AB Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 201CNQ. Units The 201CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.
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201CNQ.
O-244AB
201CNQ
IRFP460
FL40S02
201CNQ045
IRFP460
201CNQ035
201CNQ040
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201CNQ
Abstract: 201CNQ035 201CNQ040 201CNQ045 IRFP460
Text: Bulletin PD-2.258 rev. C 07/01 201CNQ. SERIES 200 Amp SCHOTTKY RECTIFIER TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 201CNQ. Units The 201CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.
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201CNQ.
O-244AB
201CNQ
IRFP460
FL40S02
201CNQ035
201CNQ040
201CNQ045
IRFP460
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-2.258 rev. C 07/01 201CNQ. SERIES 200 Amp SCHOTTKY RECTIFIER TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 201CNQ. Units The 201CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.
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201CNQ.
O-244AB
100Apk,
201CNQ
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-2.258 rev. C 07/01 201CNQ. SERIES 200 Amp SCHOTTKY RECTIFIER TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 201CNQ. Units The 201CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.
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201CNQ.
O-244AB
201CNQ
08-Mar-07
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203CNQ100
Abstract: 122NQ030R MBR1535 21FQ040 121NQ035 189NQ
Text: Schottky Diodes www.irf.com Part Number V RRM V I FAV @TC (A) (C) VFM @I FM I RM @VRWM E AS I AR 25°C 25°C (mA) (mA) (mJ) (A) Max T J (°C) Fax on Demand Number Case Outline Key Surface-Mount Packages SMB 10BQ100 100 1 152 0.78 10BQ015 15 10BQ040 40 10BQ060
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10BQ100
10BQ015
10BQ040
10BQ060
30BQ100
30BQ015
30BQ040
30BQ060
10TQ035S
10TQ045S
203CNQ100
122NQ030R
MBR1535
21FQ040
121NQ035
189NQ
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209CmQ150
Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
Text: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78
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10BQ100
10BQ015
10BQ040
10BQ060
30BQ100
30BQ015
30BQ040
30BQ060
209CmQ150
K1760
408CMQ060
121NQ035
10BQ040
10BQ060
10BQ100
10TQ035S
10TQ045S
30BQ015
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stpr16
Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •
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MURB1620CT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
stpr16
MUR480E
340L-02
PK MUR 460
BV 202 0158
1N541
AK SOT23
STPS2045
SS33 SMB
A14F diode
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045PT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MR2835S equivalent
A14F diode
1n5404 diode
FE16A
MUR860 equivalent
MUR1620CT
MUR420 diode
usd745c equivalent
MBRD360
PR1502
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB1045
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mur1650
T4 SOD-123 1N4004
MR2510
1N2069
SES5001
mur420 equivalent
CT PR1504
equivalent for fr302 diode
mur 460 switch
diode A14A surface mount
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A14F diode
Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.
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MURS220T3
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
A14F diode
DIODE marking ES2D
V352
DC "Transient Voltage Suppressor"
diode A14A
rg3j 005
SR1002
0010C
357D-01
1N2069
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
FE16B
mbr3045pt transistor
FR102 SOD-123
1N4007 sod-123
BYV43-45
BYV19-45
MUR1660CT equivalent
MUR460 BL
FEP16DT 0032
mur420 equivalent
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MUR1560 equivalent
Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in
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MBRD835L
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MUR1560 equivalent
1N4004 SMA
S1A SOD 88
S1A MARKING CODE SOD 88
1N5189
ss33 sma
Diode marking us1j
diode 6a10
6TQ035
usd745c equivalent
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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20257
Abstract: 203CNQ100
Text: 1 I n t e r n a t io n a l R e c t if ie r PM Nuntfaor II Schottky Diodes 7 >F(AV)0Tc VfM*IFM A * (Veto) » te mJ (3) (7)tan fatodVmm Ur mA (Amp») Fw-on- •GW Mu l Tj •c Notes Dnnand Numbtr Cue Style, (Cm OuAm) (1) M od ul« « Center Tap 200CNQ035
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OCR Scan
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200CNQ035
200CNQ040
200CNQ045
201CNQ035
201CNQ040
201CNQ045
201CNQ050
203CNQ080
203CNQ100
208CNQ060
20257
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200cnq050
Abstract: No abstract text available
Text: IN TER NAT IO NA L R E C T I F I E R HE D | 4055455 GG1DDE3 3 | r*-o 3 *«2 / Schottky Rectifiers 25 T O 440 A M P S ' f AV @ T C Part Number V RW M vF M @ 'r m T j = 125°C & 'fm Rated VRW M Max. Tj (V) (A) (°C) (A) (mfl) <°C) 200CNQ030 200CNQ035 200CNQ040
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200CNQ030
200CNQ035
200CNQ040
200CNQ045
200CNQ050
201CNQ
201CNQ035
201CNQ040
201CNQ045
201CNQ050
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D425
Abstract: No abstract text available
Text: PD-2.258 International S Rectifier 201 c n q . s e rie s SCHOTTKY RECTIFIER 200 Amp Description/Features Major Ratings and Characteristics Characteristics ' f AV Rectangular waveform RRM lFSM @ tp-5pssine VF TJ @ 10OApk, Tj-125DC (per leg) 200 A 35 to 45
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D-427
D-428
D425
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200CNQ030
Abstract: 200CNQ 200CNQ020 200CNQ035 200CNQ040 201CNQ020 201CNQ030 201CNQ035 201CNQ045 diode
Text: INTERNATIONAL RECTIFIER 4855452 SS DE I 4fl554SE □□□5133 55C 0 5 1 3 3 INTERNATIONAL RECTIFIER D Data Sheet No. PD-2.072A INTERNATIONAL RECTIFIER S Q O C N Q A N D 2 Q 1 C N Q S I«R E R I E S SOO Amp Schottky Center Tap Rectifier Module Description/Features
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200CNQ
201CNQ
S545a
4UNCT10N
1N1801
200CNQ030
200CNQ020
200CNQ035
200CNQ040
201CNQ020
201CNQ030
201CNQ035
201CNQ045 diode
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200CNQ030
Abstract: IOR 5300
Text: INTERNATIONAL RECTIFIER SS DE I 4fl554SE 00D5133 55C 0 5 1 3 3 48 5 545 2 IN TE RNAT ION A L R EC TIFI E R Data Sheet No. PD-2.072A INTERNATIONAL RECTIFIER IOR SOOCNQ AND B O I CNQ SERIES 800 Amp Schottky Center Tap Rectifier Module Major Ratings and Characteristics
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554SE
00D5133
200CNQ
201CNQ
200CNQ030
IOR 5300
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smd diode f54
Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040
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10MQ040
10MQ060
10MQ090
15MQ040
10BQ015
10BQ040
10BQ060
10BQ100
30BQ015
30BQ040
smd diode f54
18t0045
smd f54
209DMQ
20F0040
209DMQ150
50W005F
15CT0035
smd diode K10
209CMQ150
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12v to 220v step-up transformer winding awg
Abstract: CD4013B IC PIN DETAILS HEXFETs FETs B66335
Text: APPLICATION NOTE 965A A 500W100 kHz Resonant Converter Using HEXFETs* H E X F E T is a trademark ot International Rectifier by S. Young, Q. Cattino Summary This application note describes the implementation o f a 100 kHz reson ant converter using International Rec
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500W100
AN-965A
12v to 220v step-up transformer winding awg
CD4013B IC PIN DETAILS
HEXFETs FETs
B66335
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