TMM2018AP-35
Abstract: AZ21 TMM2018AP TMM2018AP-25 TMM2018AP-45 128X16X8
Text: TNIM2018AP-25, TMM2018AP-35, TM M 2018AM S idescription I T h e T M M 2 0 1 8 A P is a 16,384 b i t s h i g h s peed a n d l o w p o w e r s t a t i c r a n d o m a c c e s s m e m o r y o r g a n i z e d as 2 ,048 w o r d s b y 8 b i t s and o p e r a t e s f r o m a s i n g l e 5V supply.
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TMM2018AP-25.
TMM2018AP-35,
TMM2018AP-45
TMM2018AP
25ns/35ns/45ns
150mA/135mA/135mA.
TMM20/0
TM1R2018AP-25,
TMM2018AP-35
AZ21
TMM2018AP-25
TMM2018AP-45
128X16X8
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Untitled
Abstract: No abstract text available
Text: TNIM2018AP-25, TMM2018AP-35, TM M 2018AM S i d e s c r i p t i o n I T h e T M M 2 0 1 8 A P is a 16,384 b i t s h i g h s peed a n d l o w p o w e r s t a t i c r a n d o m a c c e s s m e m o r y o r g a n i z e d as 2 ,048 w o r d s b y 8 b i t s and o p e r a t e s f r o m a s i n g l e 5V supply.
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TNIM2018AP-25,
TMM2018AP-35,
2018AM
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TMM2018AP-25' TMM2018AP-35, TMM2018ÄP-45 iDESCRIPTIONl The TMM2018AP is a 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply. Toshiba's high performance device technology provides both high speed and low power
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TMM2018AP-25
TMM2018AP
25ns/35ns/45ns
150mA/135mA/135mA.
MM2018AP-25,
TMM2018AP-35,
TMM2018AP-45
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