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    Untitled

    Abstract: No abstract text available
    Text: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data


    Original     		PDF 23N60C5 ISOPLUS220TM E72873 20100303c

    23N60

    Abstract: E72873 A6014
    Text: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data


    Original     		PDF 23N60C5 ISOPLUS220TM E72873 20100303c 23N60 E72873 A6014